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51.
The energy exchange between the pumping laser and FIR signal in the optically pumped FIR laser (OPFIRL) system was studied. The iteration method has been used to calculate the power density of the pumping and FIR signals at any point along the optical axis of the sample tube. It was found that the power density of the FIR signal did not always increase along the length of the laser tube. There was a maximum FIR power density at the appropriate point in the sample tube. If the distance of maximum power point from the entrance of the OPFIRL tube was taken as the length of sample tube Zopt, the maximum FIR laser output should be obtained. This was the optimum length of OPFIRL tube. The value of Zopt was closely related to the parameter of OPFIRL such as the pumping power density, the pumping detuning and the frequency of the FIR laser. The energy-exchange and the maximum output of the fir laser were calculated under the ideal condition.  相似文献   
52.
在n-GaAs电解液界面,用聚焦He-Ne激光照射, 使n-GaAs表面发生微区光电化学腐蚀, 用计算机控制步进马达, 使试样在X-Y二维方向扫描移动, 能在晶片上得到刻蚀点直径2 μm的刻蚀图案. 研究了激光相对光强, KOH、H_2SO_4、KCl等刻蚀剡的浓度, 光腐蚀的时间, 电极电位等因素对腐蚀点的直径和深度的影响, 通过实验数据找出腐蚀过程的规律, 并用光电化学原理进行解释.  相似文献   
53.
The photoreduction of Cu2+ at the surface of ZnO nanoparticles and ZnO/Ag nanostructures was investigated. The spectral characteristics of the obtained ZnO/Cu and ZnO/Ag/Cu composites were studied in relation to the reaction conditions. It was shown that the ZnO/Ag nanoparticles have higher photocatalytic activity in the reduction of Cu2+ ions than the individual ZnO particles.  相似文献   
54.
以巯基丙酸(MPA)为稳定剂, 利用微波辐射加热方法制备了水溶性的Cu掺杂的ZnS纳米晶. 通过改变微波条件, 可以在460~572 nm之间实现对ZnS∶Cu纳米晶发射峰位的连续调控. 通过XRD、 UV-Vis、荧光及荧光衰减对ZnS∶Cu纳米晶的结构和发光性质进行了详细探索, 并利用时间分辨荧光光谱对其发光机理进行了初步研究.  相似文献   
55.
Applications of chalcogenide glass optical fibers   总被引:2,自引:0,他引:2  
Chalcogenide-glass fibers based on sulfide, selenide, telluride and their rare-earth-doped compositions are being actively pursued worldwide. Great strides have been made in reducing optical losses using improved chemical purification techniques, but further improvements are needed in both purification and fiberization technology to attain the theoretical optical losses. Despite this, chalcogenide-glass fibers are enabling numerous applications that include laser power delivery, chemical sensing, and imaging, scanning near field microscopy/spectroscopy, IR sources/lasers, amplifiers and optical switches.  相似文献   
56.
The rectifying junction characteristics of the organic compound pyronine-B film on a p-type Si substrate has been studied. The pyronine-B has been sublimed on the top of p-Si surface. The barrier height and ideality factor values of 0.79±0.04 and 1.13±0.06 eV for this structure have been obtained from the forward bias current-voltage (I-V) characteristics. From the low capacitance-frequency (C-f) characteristics as well as conductance-frequency (G-f) characteristics, the energy distribution of the interface states and their relaxation time have been determined in the energy range of (0.53−Ev)-(0.79−Ev) eV taking into account the forward bias I-V data. The interface state density Nss ranges from 4.93×1010 cm−2 eV−1 in (0.79−Ev) eV to 3.67×1013 cm−2 eV−1 in (0.53−Ev) eV. Furthermore, the relaxation ranges from 3.80×10−3 s in (0.53−Ev) eV to 4.21×10−4 s in (0.79−Ev) eV. It has been seen that the interface state density has an exponential rise with bias from the midgap towards the top of the valence band. The relaxation time shows a slow exponential rise with bias from the top of the valence band towards the midgap.  相似文献   
57.
用电化学和光电化学方法研究锑化镓表面的腐蚀以及锑化镓表面氧化膜的生成和溶解,锑化镓电极在一定电势下生成的氧化膜,用俄歇能谱证明,其主要成分为难溶的氧化锑,此氧化膜的存在抑制了锑化镓的进一步腐蚀,同时亦使锑化镓的半导体光电化学性能大为减弱,通过激光微刻蚀及电子显微镜的观察,在刻蚀剂中添加酒石酸,柠檬酸和氢氟酸等试剂,可使刻蚀形得改善,实验研究了锑化镓的平带电势的测定。  相似文献   
58.
Summary This review highlights recent advances in the use of quantum dots (QD’s) as luminescent sensors. The bulk of the study concentrates on systems that possess organic ligands bound to the surface of QD’s. These ligands vary from low molecular weight thiols to larger molecules such as maltose binding protein. All have one thing in common: when a target analyte binds to the ligand/receptor, a perturbation of the system occurs, that registers itself as a change in the luminescence intensity of the QD. Two main mechanisms are prevalent in controlling the luminescent intensity in such systems. The first is Photoinduced Electron Transfer (PET) and the second energy transfer. This review looks at current sensors that operate by using these mechanisms. Two component systems are also investigated where a quencher is first added to a solution of the QD, followed by addition of the target analyte that interacts with the quencher to influence the luminescence intensity.  相似文献   
59.
In this work, a combination of complementary metal-oxide semiconductor (CMOS) microchip system with capillary array electrophoresis (CAE) is demonstrated as a system for optimizing conditions for enzymatic reaction. Dimethylacridinone (DDAO)-phosphate substrate and alkaline phosphatase conjugate were selected for the enzymatic reaction, which was applicable to the enzyme-linked immunosorbent assay (ELISA) technique. Laser-induced fluorometry with a miniature semiconductor laser was used to detect the enzymatic products. The speed of the enzymatic reaction between the DDAO-phosphate and the alkaline phosphatase conjugate was investigated as a function of reaction time. The microchip-CAE detection system could determine the pH condition and the concentration of enzyme that are suitable for rapid and low-cost analysis. This result shows the feasibility of using the microchip-CAE system for application to miniaturized screening systems.  相似文献   
60.
Photoelectron spectroscopy, in particular the angular resolved photoemission excited by ultraviolet radiation (ARUPS), provides the most direct experimental information about the electron structure of crystals, both of the bulk and of the low-index surfaces. The sensitivity of the method, as well as its difficulties, when applied to GaAs/AlAs superlattices are described. The new periodicity of these man-made crystals in the direction of their growth (e.g., in the layer-by-layer growth in molecular beam epitaxy), is responsible for opening of the new energy gaps (so-called minigaps) in the electron energy bands of crystals forming the superlattice. In addition to the well-known confinement of electrons at the valence and conduction band edges in long-period superlattices, the electron confinement to the interfaces has also been found in the vicinity of minigaps in short-period superlattices. The role of this confinement in the intensities of electrons photoemitted from superlattice surfaces is discussed. Superlattices with different thicknesses in the topmost layers represent systems with a simple change of the surface atomic structure. The predictions of one-dimensional models about a change of the surface-state energy within the band gap with a change of crystal potential termination are tested for the ideally terminated (1 0 0) surface of a very thin superlattice (GaAs)2(AlAs)2. The results of the energy distributions of photoemitted electrons, calculated in the one-step model of photoemission, show that the ARUPS experimental observation of surface-state shifts should be possible, at least in larger minigaps. The results indicate the possibility of a straightforward tuning of the electronic structure of the superlattice surface by geometrical means.  相似文献   
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