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排序方式: 共有4189条查询结果,搜索用时 262 毫秒
41.
K. M. A. Salam Hidekazu Konishi Masahiro Mizuno Hisashi Fukuda Shigeru Nomura 《Applied Surface Science》2002,190(1-4):88-95
Polycrystalline (1−x)Ta2O5−xTiO2 thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO2 layer was formed at the (1−x)Ta2O5−xTiO2/Si interface. Thin films with 0.92Ta2O5–0.08TiO2 composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×1011 cm−2 eV−1, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm2 was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10−9 A/cm2 up to an applied electric field of 6 MV/cm. 相似文献
42.
43.
研究一维半导体在外电磁场中的光吸收、涉及电子带间的直接跃迁与间接跃迁,考虑了电子-空穴相互作用的激子光吸收,导出一维半导体的光吸收系数公式。 相似文献
44.
Threshold current and differential quantum efficiency of broad contact lasers with asymmetric facet reflectivity are discussed
with the purpose to reveal factors essential for optimisation of the wall-plug efficiency of such lasers. Lasers with low
front facet reflectivity and short cavity often exhibit behaviour difficult to explain with a classical theory. More rigorous
calculation performed in this work show that differential quantum efficiency is indeed less affected by a change of the front
facet reflectivity or cavity length than predicted by such theory. These findings greatly simplify criteria for optimisation
of the wall-plug efficiency of broad contact lasers with coated facets. 相似文献
45.
Takeshi Kitatani Masahiko Kondow Koji Nakahara M. C. Larson Kazuhisa Uomi 《Optical Review》1998,5(2):69-71
Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications. 相似文献
46.
V.M. Khulugurov V.N. Salomatov I.M. Kalogeras A. Vassilikou-Dova I. Christakis 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,28(1):91-101
Thermally Stimulated Depolarisation Current (TSDC) and optical methods are applied to a range of alkali-fluoride crystals
in order to establish a model for the stable F
2
+
- like colour centres in LiF:OH-. The experimental results for LiF:OH- suggest that the OH- defects are partially destroyed under ionising irradiation or during crystal growth. The low-temperature dielectric relaxation
signals in LiF:OH- and LiF:Mg2+,OH- are attributed to highly interacting hydroxide ions and products of their destruction located in extended lattice defects.
In LiF:OH-, in contrast to other alkali halides, the results advocate for a defect-structure model, which considers a neutral defect
(ND, probably O2 or H2) sited at the anion vacancy of the O2--V
a
+
dipole and which possibly is the “nucleus” for the F
2
+
centre. The proposed F
2
+
(ND, O-) model seems to better explain the dielectric results, compared to the older F
2
+
(O2-) and F
2
+
(O-) models. The estimate for the electric dipole moment derived from the experimental TSDC bands, gives a value for the F
2
+
- like centre in LiF:OH- between those of the F
2
+
(O-) and F
2
+
(O2-) defects, in good agreement with the proposed F
2
+
(ND,O-) model. The reduction of the activation energy barrier of the (re)orientation process of the Mg2+V
c
-
(OH-) complexes in LiF:Mg2+,OH-, and the low-temperature shift of their TSDC band, compared to the single Mg
2
+
V
c
-
peak in LiF:Mg2+, are tentatively ascribed to an increase in the crystal-lattice parameters owing to the presence of OH- and/or products of its destruction.
Received 31 August 2001 / Received in final form 30 March 2002 Published online 9 July 2002 相似文献
47.
QIN Guo-Yi 《理论物理通讯》2003,40(12)
An improved valence force field model (VFFM) is suggested to calculate the phonon modes in both bulk specimens and quantum dots (QDs) of AlAs taking account of the effect of transverse effective charges (TCs) correctly.The resultant dispersions of AlAs bulk phonons are in accord better with the results carefully fitted to the experimental data by using 11-parameters rigid-ion model, than those got by ordinary VFFM, especially in the region of near F point. For AlAs QDs, TCs are evaluated bond by bond for each phonon mode of QD and its effect on the change of the force on atoms is taken into account to modify further the phonon spectrum. The frequency spectra and densities of phonon states of different irreducible representations calculated by using improved VFFM are compared with the results of ordinary VFFM. The correct evaluation of the TCs is not only important in calculating the phonon spectrum of both bulk and QD specimens accurately, but is also in the further discussion of the electron-phonon (e-ph) interaction, which can be directly related to TCs of ions in QD. 相似文献
48.
49.
Memory switching of germanium tellurium amorphous semiconductor 总被引:1,自引:0,他引:1
M.M. Abdel-Aziz 《Applied Surface Science》2006,253(4):2059-2065
The dc conductivity and switching properties of amorphous GeTe thin film of thickness 262 nm are investigated in the temperature range 303-373 K. The activation energy ΔEσ, the room temperature electrical conductivity σRT and the pre-exponential factor σ0 were measured and validated for the tested sample. The conduction activation energy ΔEσ is calculated. The I-V characteristic curves of the thin film samples showing a memory switching at the turnover point (TOP) from high resistance state (OFF state) to the negative differential resistance state (NDRS) (ON state). It is found that the mean values of the threshold electrical field Eth decreased exponentially with increasing temperatures in the investigated range. The switching activation energy ΔEth is calculated. Measurements of the dissipated threshold power Pth and the threshold resistance Rth were carried out at TOP point at different temperatures of the samples. The activation energies ΔER and ΔEP caused by resistance and power respectively are deduced. The results obtained support thermal model for initiating switching process in this system. 相似文献
50.
光纤环形外腔半导体激光器频偏特性研究 总被引:1,自引:1,他引:0
本文给出了在环形光纤外腔光反馈之下半导体激光器频偏特性的小信号分析理论.分析表明,尤其在千兆赫以下的调制频段中,耦合腔相移、内外腔光耦合强度及内外腔光场相位失谐对频偏功率比均有显著影响.可望用作强度调制直接检测高速率、长距离光纤通信系统中的光源. 相似文献