全文获取类型
收费全文 | 3025篇 |
免费 | 875篇 |
国内免费 | 289篇 |
专业分类
化学 | 688篇 |
晶体学 | 132篇 |
力学 | 37篇 |
综合类 | 22篇 |
数学 | 62篇 |
物理学 | 3248篇 |
出版年
2024年 | 9篇 |
2023年 | 16篇 |
2022年 | 84篇 |
2021年 | 72篇 |
2020年 | 77篇 |
2019年 | 58篇 |
2018年 | 72篇 |
2017年 | 113篇 |
2016年 | 120篇 |
2015年 | 109篇 |
2014年 | 190篇 |
2013年 | 220篇 |
2012年 | 217篇 |
2011年 | 235篇 |
2010年 | 214篇 |
2009年 | 198篇 |
2008年 | 244篇 |
2007年 | 228篇 |
2006年 | 211篇 |
2005年 | 156篇 |
2004年 | 139篇 |
2003年 | 118篇 |
2002年 | 174篇 |
2001年 | 101篇 |
2000年 | 109篇 |
1999年 | 100篇 |
1998年 | 60篇 |
1997年 | 74篇 |
1996年 | 72篇 |
1995年 | 62篇 |
1994年 | 39篇 |
1993年 | 31篇 |
1992年 | 31篇 |
1991年 | 24篇 |
1990年 | 17篇 |
1989年 | 14篇 |
1988年 | 19篇 |
1987年 | 23篇 |
1986年 | 17篇 |
1985年 | 22篇 |
1984年 | 20篇 |
1983年 | 17篇 |
1982年 | 23篇 |
1981年 | 15篇 |
1980年 | 12篇 |
1979年 | 2篇 |
1976年 | 2篇 |
1975年 | 2篇 |
1973年 | 4篇 |
1957年 | 1篇 |
排序方式: 共有4189条查询结果,搜索用时 31 毫秒
21.
将三阶微扰理论应用于单晶GaAs半导体,结合与实际相接近的能带结构,得到了GaAs中三光子吸收系数的解析式表达式,在考虑了激发电子的逃逸过程的情况下,进而推导了负电子亲和势GaAs光电阴极中三光子光电发射的发射系数的解析表达式.两表达式得到的理论数值分别与用ns量级脉宽、2.06μm波长的激光测得的GaAs中三光子吸收系数和GaAs(Cs,O)光电阴极中三光子发射系数的实验值相比较,吻合较好. 相似文献
22.
The effect of radiation gain saturation in quantum-well heretostructures was investigated in the system GaAs—AlGaAs with regard
to the spectral line broadening and the type of radiation polarization.
Belarusian State University, 4, F. Skorina Ave., Minsk, 220050, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii,
Vol. 64, No. 6, pp. 797–800, November–December, 1997. 相似文献
23.
Zhengqian Luo Guoyong Sun Zhiping Cai Miaoling Si Qibo Li 《Optics Communications》2007,277(1):118-124
In this paper, continuous wave Yb3+-doped double-clad fiber lasers (DCFLs) with linear-cavity are investigated theoretically and numerically using the rate equations. Under the steady state conditions, the simplified analytic solutions of Yb3+-doped DCFLs under considering the scattering loss are deduced in the strongly pump condition. Compared with the known analytic solutions in published literatures, our analytic solutions are more accurate, especially, at higher reflectivity of output mirror. In addition, a fast and stable algorithm based on the Newton-Raphson method is proposed to simulate numerically Yb3+-doped DCFLs. The results by simplified analytic solutions are in good agreement with those by the numerical simulation. Moreover, we have performed the optimization of an Yb3+-doped DCFL using the simplified analytic solutions and the numerical simulations, respectively. 相似文献
24.
Meihua Lu H. Gong T. Song Jian-Ping Wang Hong-Wei Zhang T.J. Zhou 《Journal of magnetism and magnetic materials》2006
We present a simple way to synthesize FePt and ZnO (wide-band-gap semiconductor) nanoparticle composites. The FePt nanoparticles were fabricated using the method reported by Sun et al. By controlling the heating rate, 3 nm FePt nanoparticles were synthesized. Well-dispersed FePt and ZnO nanoparticle composites were prepared by further adding zinc acetate and oleyl amine into the 3 nm FePt nanoparticle dispersion. By controlling the molar ratio of the FePt and zinc acetate, FePt and ZnO nanoparticle composites with different FePt particle fractions were obtained. The intensity of photo luminescence spectra of the nanoparticle composites increases very much with decreasing FePt particle fraction, whereas the peak position shifts a little. After annealing at 550 °C for half an hour, the nanoparticle composites become magnetically hard or semi-hard with coercivity much dependent on the FePt particle volume fraction. The coercivity of the composites increases with annealing temperature. The composites hold the promise of applications in new generation recording and/or optical devices. 相似文献
25.
26.
基于将Maxwell方程与四能级原子系统速率方程相结合而建立起随机激光时域理论,并利用有限时域差分法,研究了二维随机介质中激光模式的输出特性与介质尺寸、外形及抽运速率等参数的关系.结果表明,与传统激光模式相似,随机激光模式的强度随抽运速率的变化不仅具有阈值特性,而且具有饱和特性.基于模式特性对介质及抽运参数的依赖关系,提出了二维随机激光器的选模方式,在很大程度上不同于传统激光器的选模方式.
关键词:
随机激光器
模式选择
无序介质中的光学特性 相似文献
27.
We present a study of the growth kinetics of pentacene monolayer islands on SiO2 in the submonolayer regime by using Atomic Force Microscopy (AFM). Two distinct growth modes, namely correlated growth (CG) and non-correlated growth (NCG), have been identified by Voronoi tesselation. These two modes are characterized by different island growth kinetics. In the case of correlated growth, the average island size 〈A〉 scales with deposition time t i.e. 〈A〉 ∝ t whereas for non-correlated growth, 〈A〉 ∝ t2. The CG and NCG regimes are defined by the level of re-evaporation which determines the capture zones around the islands: Wigner-Seitz cells for CG and coronas of width λD (λD is the mean diffusion distance on SiO2 before re-evaporation) for NCG. A simple model is proposed to reproduce the experimental growth kinetics in both modes. 相似文献
28.
F. Vlker 《Optics & Laser Technology》1991,23(6):331-334
An alexandrite-laser rod was actively Q-switched in the transversal fundamental mode at λ = 758 nm with an double crystal KD*P Pockels cell. Pulse width, pulse energy and optical pulse delay (the build-up time of the photon field in the resonator) were measured as functions of pumping energy, rod temperature and reflectivity of the output coupling mirror. As the laser gain of alexandrite strongly depends on temperature, the pulse width and pulse energy were also investigated as functions of the temperature of the active material. A comparison of experimental data with theory was made. 相似文献
29.
We have proposed a mechanism of nonideality, i.e., the temperature dependence of the ideality factor, in nearly ideal Au/n-Si Schottky barriers. Because of the nature of metal-induced gap states, positively ionized defects close to the interface are considered to cause local lowering of the Schottky barrier height (SBH) due to downward bending of the energy band. These positively charged defects become neutralized in equilibrium with the Fermi level due to the band bending, when they are very close to the interface. However, because the SBH lowering disappears by the neutralization of donor, the energy level of donor with a usual energy level scheme rises above the Fermi level after the neutralization. This contradiction to the equilibrium neutralization is resolved by Si self-interstitial with a large negative-U property, which is generated by the fabrication process. The energy level of the donor estimated from the SBH lowering is in good agreement with that of theoretical calculation of Si self-interstitial. Thus, the defect is concluded to be the Si self-interstitial, which is distributed to more than 10 Å depth from the interface. 相似文献
30.
Physical aspects of an operation of the GaAs-based InGaAs/GaAs quantum-well (QW) VCSELs with the intentionally detuned optical
cavities have been considered in the present paper using the comprehensive three-dimensional self-consistent optical–electrical–thermal-gain
simulation. In GaAs-based structures, very good DBR resonator mirrors and a very efficient methods to confine radially both
the current spreading and the electromagnetic field with the aid of oxide apertures may be applied. It has been found using
the above simulation that even currently available immature technology enables manufacturing the above devices emitting radiation
of wavelengths over 1.20 μm. In particular, while the room-temperature 1.30-μm lasing emission is still beyond possibilities
of the InGaAs/GaAs QW VCSELs, these structures may offer analogous 1.25-μm emission, especially for the high-power and/or
high-temperature operation. 相似文献