Theory and experiment of large numerical aperture objective Raman microscopy: application to the stress‐tensor determination in strained cubic materials

We present the theory underlying the large numerical aperture objective micro‐Raman backscattering experiment and apply it to the elaboration of a characterization methodology for the determination of the stress tensor in strained cubic semiconductor structures. The presented stress characterization technique consists in monitoring the variations of the stress‐sensitive optical phonon peak position and linewidth while rotating stepwise the sample about its normal. The practical application of the technique is illustrated on a silicon‐on‐insulator (SOI) microelectronic structure demonstrating a plane stress‐tensor determination. Copyright © 2008 John Wiley & Sons, Ltd.     

Improving the Performance of TIPS-pentacene Thin FilmTransistors via Interface Modification

Understanding the structure-performance relationship is crucial for optimizing the performance of organic thin film transistors. Here, two interface modification methods were applied to modulate the thin film morphology of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)pentacene(TIPS-pentacene). The resulting different film morphologies and packing structures led to distinct charge transport abilities. A substantial 40-fold increase in charge carrier mobility was observed on the octadecyltrichlorosilane(OTS)-modified sample compared to that of the transistor on the bare substrate. A better charge mobility greater than 1 cm²·V^-1·s^-1 is realized on the p-sexiphenyl(p-6P)- modified transistors due to the large grain size, good continuity and, importantly, the intimate π-π packing in each domain.     

Singlet-Triplet Transitions of a Pöschl-Teller Quantum Dot

We study the energy spectra of a two-dimensional two-electron quantum dot (QD) with Pöschl-Teller confining potential under the influence of perpendicular homogeneous magnetic field. Calculations are made by using the method of numerical diagonalization of Hamiltonian matrix within the effective-mass approximation. A ground-state behavior (spin singlet-triplet transitions) as a function of the strength of a magnetic field is found. We find that the dot radius R of a Pöschl-Teller potential is important for the ground-state transition and the feature of ground-state for a Pöschl-Teller QD and a parabolic QD is similar when R is larger. The larger the well depth, the higher the magnetic field for the singlet-triplet transition of the ground-state of two interacting electrons in a Pöschl-Teller QD.     

Synthesis and X‐ray powder diffraction studies of semiconducting alloys in the system AgCd2‐xZnxGaS4

X‐ray powder technique was used in the investigation of AgCd₂GaS_4–'AgZn₂GaS₄' section to determine the region of AgCd₂GaS₄‐based solubility. It was established that the solid solution forms up to 75 mol.% 'AgZn₂GaS₄'. The refinement of AgCd_0.5Zn_1.5GaS₄ structure was performed. This alloy crystallizes in orthorhombic structure (space group Pmn2₁ ) with unit cell parameters a =0.78772(2), b =0.67221(2), c =0.64019(2) nm, V =0.33899(3) nm³. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

有机溶剂热生长技术制备硫族化合物及其光学特性的研究

以有机溶剂热生长技术(solvothermaltechnique)制备了半导体硫族化合物(CdS、ZnS、MoS₂)等纳米颗粒,采用XRD、TEM等技术对其结构进行表征.以ITO导电玻璃以及导电聚合物(PANI、PPY)膜为基底,将纳米颗粒涂布其上并以PL法研究其光学特性,实验结果表明:经修饰后,材料的荧光发射位置发生显著的变化.     

水热法合成Mnx Zn1-xO微晶体

本文采用水热法合成了MnxZn1-xO晶体,水热反应条件为3mol·L-1KOH作为矿化剂,填充度为35;,温度为430℃,在Zn(OH)2中添加一定量的MnO2为前驱物,反应时间为24h.通过X射线能谱仪测量了晶体中的Mn含量,随着前驱物中MnO2含量的增加,晶体中Mn的原子百分比随着增加,Mn最大原子百分比含量超过了2;,晶体的形貌具有纯ZnO晶体的六角柱形特征.显露柱面m{1010}、锥面p{1011}、负极面O面{0001}和正极面{0001}.晶体直径为50～200μm,高度为20～100μm.     

计算半导体平板微腔自发发射的近似方法

引入新变量,并利用高阶泰勒展开完成半导体平板微腔自发发射的空间积分,由此得到半导体平板微腔TE模式自发发射的近似表达式.在腔长为半个中心波长和高反射率腔面的半导体平板微腔中,结合电子和空穴的费米分布函数,用近似方法计算垂直方向小角度内自发发射谱和总的自发发射谱,分别与数值空间积分基本相同,可以用于计算量子阱平板微腔自发发射谱.     

传统合金型热电材料研究进展

随着热电材料制备方法的多样化和性能表征手段的具体化,合金型热电材料以其优异性能在众多热电材料中脱颖而出,成为拥有高热电性能和高转换率的热电材料.主要介绍了根据适用温度划分的三类传统合金型热电材料:低温热电材料Bi2 Te3、中温热电材料PbTe和高温热电材料SiGe,重点归纳总结了金属合金热电性能优化方法,最后概述了其实际应用领域并展望其未来的发展前景.     

半导体纳米材料

介绍了半导体纳米材料的研究进展、物理特性和应用前景。