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161.
半导体光放大器的光-光互作用及其应用 总被引:1,自引:0,他引:1
半导体光放大器(SOA)中的非线性系数约为普通光纤的10^9,为光子晶体光纤的10^7,而且有4种光-光互作用,即交叉增益调制(XGM)、交叉相位调制(XPM)、交叉偏振调制(XSM)及四波混频(FWM),可以灵活地组成各种光信号处理器件,如波长变换器、全光触发器、全光逻辑、全光时钟恢复、全光缓存器……等,正成为整个光信号处理的基础。文章介绍了它们的原理和简单应用。 相似文献
162.
直接扣除法测量半导体光放大器频率响应 总被引:1,自引:0,他引:1
在光电子器件散射参量定义的基础上建立了基于直接扣除法的半导体光放大器频率响应测量系统,测量中通过扣除激光器和探测器系统的频率响应,得到放大器固有的频率响应。对InGaAsP体材料行波腔半导体光放大器样品进行了测量,得到了放大器在不同注入光功率和不同偏置电流下的频率响应曲线。这些曲线很好地反应了半导体光放大器的增益饱和和噪声特性,进一步分析发现半导体光放大器对低频调制信号的放大能力弱于对高频信号的放大能力,分析认为其原因在于半导体光放大器的载流子寿命有限导致低频信号长时间消耗载流子时,载流子数量无法及时恢复,从而使得增益降低。 相似文献
163.
164.
Fluctuations of the semiconductor surface potential in a Si-SiO2 structure, caused by irradiation with different high-energy particles (50 MeV electrons and 40 keV arsenic ions) and subsequent annealing, have been studied by measuring the semiconductor interface state parameters. It is established that the fluctuation of the semiconductor surface potential decreases slightly, from 0.049 V to 0.044 V, after irradiation, while a considerable increase is observed after annealing. For the samples irradiated by arsenic ions, the increase in fluctuation is much larger (0.096 V) than that for the electron-irradiated samples (0.06 V). 相似文献
165.
Abhishek Verma Swati Nagpal Praveen K. Pandey P. K. Bhatnagar P. C. Mathur 《Journal of nanoparticle research》2007,9(6):1125-1131
Quantum Dots of CdS
x
Se1−x
embedded in borosilicate glass matrix have been grown using Double-Step annealing method. Optical characterization of the
quantum dots has been done through the combinative analysis of optical absorption and photoluminescence spectroscopy at room
temperature. Decreasing trend of photoluminescence intensity with aging has been observed and is attributed to trap elimination.
The changes in particle size, size distribution, number of quantum dots, volume fraction, trap related phenomenon and Gibbs
free energy of quantum dots, has been explained on the basis of the diffusion-controlled growth process, which continues with
passage of time. For a typical case, it was found that after 24 months of aging, the average radii increased from 3.05 to
3.12 nm with the increase in number of quantum dots by 190% and the size-dispersion decreased from 10.8% to 9.9%. For this
sample, the initial size range of the quantum dots was 2.85 to 3.18 nm. After that no significant change was found in these
parameters for the next 12 months. This shows that the system attains almost a stable nature after 24 months of aging. It
was also observed that the size-dispersion in quantum dots reduces with the increase in annealing duration, but at the cost
of quantum confinement effect. Therefore, a trade off optimization has to be done between the size-dispersion and the quantum
confinement. 相似文献
166.
We report combinatorial molecular beam epitaxy synthesis and properties of a ternary epitaxial film of Co and Mn co-doped Ge grown on Ge (0 0 1) substrate. Structural effects were examined in situ by reflection high-energy electron diffraction and ex situ by microbeam X-ray diffraction techniques, and magnetic properties were probed by using magnetooptic Kerr effect. Ternary epitaxial phase diagrams have been studied for total doping concentrations up to 30 at.%, where regions of coherent epitaxy and rough disordered growth and those of near room temperature ferromagnetic ordering have been identified. 相似文献
167.
Kuniharu Fujii Satoshi Kera Mika Oiwa Koji K. Okudaira Kazuyuki Sakamoto Nobuo Ueno 《Surface science》2007,601(18):3765-3768
We have investigated the relation between the intramolecular vibrational modes of pentacene and the charge redistribution at the pentacene-graphite interface by using high-resolution electron-energy-loss-spectroscopy. The three main vibrational peaks shift to lower energies as the pentacene film thickness decreases. In order to discuss this energy shift, we have calculated the vibrational energies of a free pentacene molecule by changing its charge state. We have also calculated the vibrational energies of a pentacene molecule adsorbed on a graphite sheet by changing the pentacene-graphite distance. Taking the experimental and calculation results into account, we conclude that the observed energy shifts result from an intramolecular charge redistribution. The present results indicate that the effect of an intramolecular charge redistribution is essential to discuss the origin of an energy shift observed in a vibrational study of an organic molecule/substrate interface. 相似文献
168.
T.I. Gorbanyuk A.A. Evtukh V.G. Litovchenko V.S. Solntsev 《Physica E: Low-dimensional Systems and Nanostructures》2007,38(1-2):211
The effect of hydrogen sulphide on the current–voltage characteristics of metal–insulator–semiconductor (MIS) structures based on nanoporous silicon (Sinanopor) under copper doping has been investigated. Scanning electron (SEM), atomic force (AFM) and optic microscopes and/or secondary ion mass spectroscopy (SIMS) were used to obtain detailed characterisation of copper cluster distribution present at the surface and pores, respectively. SIMS spectra reveal that finite gradient in copper distribution along the pores and oxidation of nanoporous silicon simultaneously can be obtained successfully under electroless deposition process. It was also shown that the doping of nanoporous silicon by Cu leads to enhanced hydrogen sulphide sensitivity of MIS structures even without catalytic active top electrodes (for example, Pd) at room temperature. Furthermore, for different types of familiar MIS structures based on nanoporous silicon, e.g., MIS structures doped or undoped by copper and by using Pd metal electrodes, the hydrogen sulphide detection at room temperature mainly depends on the modification in the height of barrier of hetero- (Al–Cu–Sinanopor–c-Si) or Schottky-like (Pd–Cu–Sinanopor–c-Si) structures resulting the chemical interaction of molecular H2S gas with copper clusters at the surface and in the pores. It is demonstrated that MIS structures based on the nanoporous silicon with copper doping are more sensitive to H2S action at room temperature. In addition, the physical mechanism explaining the observed phenomena is also discussed. 相似文献
169.
设计了一种可调制的高稳定度半导体激光器驱动电路。该电路的直流稳定度高达1.5×10-5,输出电流在0~200mA内连续可调,长时间工作(12h以上)电流变化小于1μA;在直流基础上注入100kHz~300kHz的调制电流,其调制深度为0~100mA连续可调,可实现在激光干涉测量中对光波频率和光波强度的调制。将该电路驱动的光栅外腔半导体激光器和辅助温度控制电路应用于光干涉测量技术中,得到了功率稳定、波长单一的激光输出,解决了激光器的跳模现象,完成了对远距离微小振动(纳米量级)的测量。 相似文献
170.