外腔反馈对半导体激光器振荡特性的影响

通过有效反射系数的引入，根据激光谐振腔的自再现条件和对腔内光子密度、载流子密度方程的求解，分析了外腔反馈对半导体激光器的阈值增益、振荡频率和输出功率等振荡特性的影响，并通过实验进行了验证.外腔反馈后，半导体激光器的阈值电流从420mA降为370mA，输出功率的斜率效率获得了提高，理论计算的输出功率曲线与实验结果符合的很好. 关键词： 半导体激光器 外腔反馈 振荡特性     

MgxZn1-xO结构性质

采用第一性原理计算模拟了不同组分的Mg_xZn_1-xO半导体混晶的晶格常数、总能、结构,以及禁带宽度的变化。计算结果显示,随着Mg组分的增加,晶格常数逐渐减小,晶体逐渐偏离纤锌矿结构。对各种不同的Mg原子排列情况进行比较认为,Mg_xZn_1-xO的结构随组分x的增大,发生从纤锌矿到岩盐矿的结构相变的可能性高于发生相分离。另一方面,禁带宽度随组分增大主要由价带顶的移动所致。进一步分析Mg原子各种电子态对价带的影响表明,Mg对价带顶附近能带的贡献依次来自p、d、s态电子。随着组分x的增加,p态电子在价带顶附近的密度明显提高,说明sp轨道杂化不但对晶体的几何结构产生影响,而且对其电子结构也起重要作用。     

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 10¹¹ cm^–2 eV^–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10^–5A/cm² at V_fb + 1 V). These merits should be attributed to the complementary properties of Y₂O₃ and Ta₂O₅:Y can effectively passivate the large amount of oxygen vacancies in Ta₂O₅, while the positively‐charged oxygen vacancies in Ta₂O₅ are capable of neutralizing the effects of the negative oxide charges in Y₂O₃. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.

Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets.     

一种大功率窄脉冲半导体激光器测试台的研制

大功率窄脉冲半导体激光器主要光电性能参数为:输出峰值光功率、阈值电流、正向电压、上升时间、峰值波长、光谱半宽、半强度角.根据激光制导系统对大功率窄脉冲激光器参数的特殊测试要求,研制一种大功率窄脉冲激光器测试平台,将小型化大功率激励器功放模块、大范围可调DC-DC模块、信号源板、激光器座、光学准直镜集成在一个平台上,与峰值功率计、光谱仪、CCD摄像机等仪器配合,可测出大功率窄脉冲激光器的峰值功率、峰值波长及波长随温度变化的漂移特性、发光芯均匀性等参数.介绍了大功率窄脉冲激光器测试台的特点,并对测试结果作了论述.     

新型多有源区隧道再生光耦合大功率半导体激光器

针对大功率半导体激光器面临的主要困难,提出并实现了一种隧道再生多有源区耦合大光腔 高效大功率半导体激光器机理.该机理能有效地解决光功率密度过高引起的端面灾变性毁坏 、热烧毁和光束质量差等大功率激光器存在的主要问题.采用低压金属有机化合物气相淀积 方法生长了以碳和硅作为掺杂剂的GaAs隧道结、GaAs/InGaAs 应变量子阱有源区和新型多有 源区半导体激光器外延结构,并制备了高性能大功率980nm激光器件.三有源区激光器外微分 量子效率达2.2,2A驱动电流下单面未镀膜激光输出功率高达2.5W. 关键词： 半导体激光器 大功率 金属有机化合物气相沉积     

Synthesis and characterization of p-type boron-doped IIb diamond large single crystals

High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K.The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively.The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique.The electrical properties including resistivities,Hall coefficients,Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method.The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized.With the increase of quantity of additive boron,some high-index crystal faces such as {113} gradually disappear,and some stripes and triangle pits occur on the crystal surface.This work is helpful for the further research and application of boron-doped semiconductor diamond.     

非即变相位共轭反馈对半导体激光器动态特性的影响

从四波混频产生相位共轭的物理原因出发,定义了相位共轭镜（PCM）的响应时间．建立起非即变相位共轭反馈条件下半导体激光器的外腔模型。以响应时间及频率失调为参变量,对其分岔及噪声等动态行为进行数值分析。结果表明,不考虑噪声影响时,增加相位共轭镜响应时间会使混沌带出现的次数和范围得到较大的抑制,当响应时间增大到1．5ns时,混沌带消失,半导体激光器保持稳定的单周期状态;考虑噪声影响后,随若响应时间的相对强度噪声（RIN）可减小几dB甚至十几dB,产生突变需要的反馈量也增大一个数量级以上,且其频谱的峰值向高频方向移动;另外,由于共轭反馈引起的频率失调低于半导体激光器激射频率3个数量级以上．它只对分岔特性有影响．对相对强度噪声的影响几乎为零。     

MOCVD外延生长AlGaAs组份的在线监测

利用反射各向异性谱( RAS)和反射谱在线监测了AlxGa1-xAs样品的金属有机化合物汽相淀积(MOCVD)外延生长过程.通过在线监测得到的RAS和反射谱可以敏感地反映出AlxGa1-xAs外延层组份发生的变化,从而优化外延生长工艺.实验表明,反射谱中的振荡周期可以在线计算组份和生长速率,利用反射谱中的振荡的第一个最...     

Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser

Optical gain characteristics of Ge_(1_x)Snμx are simulated systematically.With an injection carrier concentration of 5×10~(18)/cm~3 at room temperature,the maximal optical gain of Ge_(0.922)Sn_(0.078) alloy(with n-type doping concentration being 5×10~(18)/cm~3) reaches 500 cm~(-1).Moreover,considering the free-carrier absorption effect,we find that there is an optimal injection carrier density to achieve a maximal net optical gain.A double heterostructure Ge_(0.554)Si_(0.289)Sn_(0.157)/Ge_(0.922)Sn_(0.078)/Ge_(0.554)Si_(0.289)Sn_(0.157) short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density.The simulation values of the device threshold current density J_(th)are 6.47 kA/cm~2(temperature:200 K,and λ=2050 nm),10.75 kA/cm~2(temperature:200 K,and λ=2000 nm),and23.12 kA/cm~2(temperature:300 K,and λ=2100 nm),respectively.The results indicate the possibility to obtain a Si-based short-wave infrared Ge_(1-x)Sn_x laser.     

用于半导体激光器的等共轭距双曲柱面镜系统

论述用于把窗口尺寸为０－１２８５ｍ ｍ ×３ ．２３９０ ｍ ｍ 的半导体激光器发出４４°×１３°的发散光束压缩成在±０－００２５ｒａｄ 内出射光的柱面镜系统。该系统的核心是用两组互相垂直、且共轭距相等的双曲柱面镜,把激光器的条形窗口的像变粗变短;然后,再用透镜组把此像“准直”到“无限远”