非即变相位共轭反馈对半导体激光器动态特性的影响

从四波混频产生相位共轭的物理原因出发,定义了相位共轭镜（PCM）的响应时间．建立起非即变相位共轭反馈条件下半导体激光器的外腔模型。以响应时间及频率失调为参变量,对其分岔及噪声等动态行为进行数值分析。结果表明,不考虑噪声影响时,增加相位共轭镜响应时间会使混沌带出现的次数和范围得到较大的抑制,当响应时间增大到1．5ns时,混沌带消失,半导体激光器保持稳定的单周期状态;考虑噪声影响后,随若响应时间的相对强度噪声（RIN）可减小几dB甚至十几dB,产生突变需要的反馈量也增大一个数量级以上,且其频谱的峰值向高频方向移动;另外,由于共轭反馈引起的频率失调低于半导体激光器激射频率3个数量级以上．它只对分岔特性有影响．对相对强度噪声的影响几乎为零。     

Ab-initio study of doped nanostructures—Mn-doped ultrathin ZnS films

An ab-initio study of the effects of the quantum confinement has been performed for the first time in the ultrathin ZnS films: unpassivated, passivated and the Mn-doped ones. A self-consistent full potential linear muffin tin orbital (FP-LMTO) method has been employed. The studied films have comparatively a large thickness range of 2.7–29.7 Å. The fundamental band gap increases exponentially with decrease in the size of the quantum confinement. The Mn-doped films reveal the localized impurity-induced states within the band gap and also in the conduction band region. The intense optical transitions between the Mn-induced states will appear at about 2.1 eV which is in excellent agreement with the observed peak in the photoluminescence experiments.     

稀磁半导体的研究进展

本文主要介绍了III-V族稀磁半导体(Ga,Mn)As的研究进展,包括(Ga,Mn)As的生长制备、基本磁性质、磁输运特征、磁光性质、磁性起源、相关的异质结构和自旋注入等,同时还简单介绍了其它稀磁半导体如IV族、III-VI族和IV-VI族等稀磁半导体的研究进展,在文章的最后描述了理想的稀磁半导体应该具备的特征以及对未来的展望。     

TM掺杂Ⅱ-Ⅳ-Ⅴ2黄铜矿半导体的电磁性质

利用自旋局域密度泛函的第一性原理对3d过渡金属(TM=V，Cr，Mn，Fe，Co和Ni)掺杂的Ⅱ-Ⅳ-Ⅴ2(CdGeP2和ZnGeP2)黄铜矿半导体的电磁性质进行系统计算，结果发现：V和Cr掺杂的CdGeP2和ZnGeP2将出现铁磁状态(FM)，Mn，Fe以及Co掺杂的CdGeB和ZnGeP2将出现反铁磁状态(AFM)，而Ni掺杂时，稀磁半导体(DMS)的磁性比较不稳定，其中Cr掺杂的CdGeP2和ZnGeP2将可能是具有较高居里温度Tc的DMS，当TM-3d电子的t2g态部分被填充时，其掺杂的DMS将出现FM状态；而当TM-3d电子的t2g态全满或者全空时，其掺杂的DMS将出现AFM状态，在(Cd，Mn)GeP，和(Zn，Mn)(GeP2中分别掺入电子和空穴载流子，可以发现载流子是否具有TM-3d电子的巡游特性是。DMS是否出现FM状态的主要原因。     

相变型半导体存储器研究进展

文章系统地介绍了相变型半导体存储器的原理、相变材料、特点、器件结构设计、研究现状及面临的几个关键器件工艺问题．C—RAM由于具有非易失性、循环寿命长、元件尺寸小、功耗低、可多级存储、高速读取、抗辐照、耐高低温、抗振动、抗电子干扰和制造工艺简单等优点，被认为最有可能取代目前的FLASH、DRAM和SRAM而成为未来半导体存储器主流产品．     

氮自掺杂Ta_2O_5微球制备及其光催化性能研究

我们采用水热法合成了具有可见光吸收的非金属自掺杂N-Ta_2O_5多孔微球光催化剂.并通过X射线粉末衍射仪(XRD)、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、紫外可见分光光度计(UV-vis)等多种表征手段对自掺杂N-Ta_2O_5的晶体结构、形貌、组分等进行了测试分析.XRD结果表明,Ta N可以在HF溶液中完全氧化为Ta_2O_5,N掺杂可以通过N与O原子的轨道杂化使Ta_2O_5的带隙从4.0 eV降低为2.2 eV,从而增强其可见光吸收.高催化活性的N-Ta_2O_5可通过调控其结晶度来实现.     

Correlated and non-correlated growth kinetics of pentacene in the sub-monolayer regime

We present a study of the growth kinetics of pentacene monolayer islands on SiO₂ in the submonolayer regime by using Atomic Force Microscopy (AFM). Two distinct growth modes, namely correlated growth (CG) and non-correlated growth (NCG), have been identified by Voronoi tesselation. These two modes are characterized by different island growth kinetics. In the case of correlated growth, the average island size 〈A〉 scales with deposition time t i.e. 〈A〉 ∝ t whereas for non-correlated growth, 〈A〉 ∝ t². The CG and NCG regimes are defined by the level of re-evaporation which determines the capture zones around the islands: Wigner-Seitz cells for CG and coronas of width λ_D (λ_D is the mean diffusion distance on SiO₂ before re-evaporation) for NCG. A simple model is proposed to reproduce the experimental growth kinetics in both modes.     

Current Oscillation and dc-Voltage-Controlled Chaotic Dynamics in Semiconductor Superlattices

We report a detailed theoretical study of current oscillation and dc-voltage-controlled chaotic dynamics in doped GaAs/AlAs resonant tunneling superlattices under crossed electric and magnetic fields. When the superlattice is biased at the negative differential velocity region, current self-oscillation is observed with proper doping concentration. The current oscillation mode and oscillation frequency can be affected by the dc voltage bias, doping density, and magnetic field. When an ac electric field with fixed amplitude and frequency is also applied to the system, different nonlinear properties show up in the external circuit with the change of dc voltage bias. We carefully study these nonlinear properties with different chaos-detecting methods.     

基于频率失谐的光混沌同步开关的特性研究

针对实验报道的光混沌同步开关现象,建立了基于半导体激光器的光混沌同步开关的理论模型.利用该模型,数值模拟了不同外腔反馈强度和注入强度下的光混沌同步开关特性.结果表明：固定外腔反馈强度,不同注入强度下的混沌同步开关的对比度和宽度均不同;当注入强度与外腔反馈强度相同时,开关的对比度达到最大值;进一步地,当外腔反馈强度和注入强度同步增强时,混沌同步开关的对比度和宽度均单调增大. 关键词： 光混沌同步开关 半导体激光器 频率失谐 外腔反馈     

GaMnN材料红外光谱中洛伦兹振子模型的遗传算法研究

利用红外反射光谱研究了蓝宝石衬底上用金属有机物化学气相淀积方法生长的稀磁半导体GaMnN材料的晶格振动特性. 并成功地将改进的遗传算法应用于其红外反射光谱洛伦兹振子模型参数的提取. 通过与GaN薄膜的洛伦兹振子模型参数的对比研究发现,GaN掺入Mn后,ω_TO向高频方向移动,γ,ε_∞和ε_s均增加,而ω_LO基本保持不变. 文中同时分析和讨论了Mn对晶格振动特性的影响及 关键词： 稀磁半导体GaMnN材料 遗传算法 洛伦兹振子模型 参数提取