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31.
《Current Applied Physics》2015,15(10):1222-1225
Light-emitting diodes (LEDs) with a Mg-doped p-type Ga1−xInxN (0 ≤ x ≤ 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga1−xInxN spacer layer is well-controlled by lowering the growth temperature and by using a suitable In composition and Mg doping concentration. All LED samples with the p-type spacer layer show a smaller efficiency droop compared to a reference LED having an undoped GaN spacer. Among the sample sets investigated, an optical power enhancement of 12% at 111 A/cm2 is obtained when inserting a 5 nm-thick p-type Ga0.97In0.03N spacer layer. The results support that carrier transport is the key factor in the efficiency droop observed in GaN-based LEDs. 相似文献
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33.
Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor
《Current Applied Physics》2015,15(10):1130-1133
We propose a distinct approach to implement a laterally single diffused metal-oxide-semiconductor (LSMOS) FET with only one impurity doped p-n junction. In the LSMOS, a single p-n junction is first created using lateral dopant diffusion. The channel is formed in the p region of the p-n junction and the n region acts as the drift region. Two distinct metals of different work function are used to form the “n+” source/drain regions and “p+” body contact using the charge plasma concept. We demonstrate that the LSMOS is similar in performance to a laterally double diffused metal-oxide-semiconductor (LDMOS) although it has only one impurity doped p-n junction. The LSMOS exhibits a breakdown voltage of ∼50.0 V, an average ON-resistance of 48.7 mΩ-mm2 and a peak transconductance of 53.6 μS/μm similar to that of a comparable LDMOS. 相似文献
34.
Dr. Deng Pan Zhengzou Fang Erli Yang Zhenqiang Ning Qing Zhou Kaiyang Chen Yongjun Zheng Prof. Yuanjian Zhang Prof. Yanfei Shen 《Angewandte Chemie (Weinheim an der Bergstrasse, Germany)》2020,132(38):16890-16897
The exceptional nature of WO3−x dots has inspired widespread interest, but it is still a significant challenge to synthesize high-quality WO3−x dots without using unstable reactants, expensive equipment, and complex synthetic processes. Herein, the synthesis of ligand-free WO3−x dots is reported that are highly dispersible and rich in oxygen vacancies by a simple but straightforward exfoliation of bulk WS2 and a mild follow-up chemical conversion. Surprisingly, the WO3−x dots emerged as co-reactants for the electrochemiluminescence (ECL) of Ru(bpy)32+ with a comparable ECL efficiency to the well-known Ru(bpy)32+/tripropylamine (TPrA) system. Moreover, compared to TPrA, whose toxicity remains a critical issue of concern, the WO3−x dots were ca. 300-fold less toxic. The potency of WO3−x dots was further explored in the detection of circulating tumor cells (CTCs) with the most competitive limit of detection so far. 相似文献
35.
《中国化学快报》2020,31(9):2259-2262
Significance of unstable species leaching was for the first time demonstrated on MOF-derived catalysts by taking PtNi-C as an example, that was instructive for the relevant catalyst fabrication and performance study. PtNi-C catalyst was synthesized by combining Pt nanoparticles with Ni-BTC after annealing in the tube furnace and the unstable Ni species can be easily leached out in nitric acid, and the stable PtNi nanoparticles trapped in the graphite carbon layer were obtained. The greatly improved catalytic ability for alcohol fuels oxidation was verified by comparing the fresh and acid leached catalysts in terms of the high peak current density, specific and mass activity and rapid charge transfer kinetics and high catalytic stability. The current work guides the importance of unstable assistant promoter removal for the MOF derived catalysts. 相似文献
36.
采用自主设计搭建的雾化辅助化学气相沉积系统设备,开展了Ga2O3薄膜制备及其特性研究工作。通过X射线衍射研究了沉积温度、系统沉积压差对Ga2O3薄膜结晶质量的影响。结果表明,Ga2O3在425~650 ℃温度区间存在物相转换关系。随着沉积温度从425 ℃升高至650 ℃,薄膜结晶分别由非晶态、纯α-Ga2O3结晶状态向α-Ga2O3、β-Ga2O3两相混合结晶状态改变。通过原子力显微镜表征探究了生长温度对Ga2O3薄膜表面形貌的影响,从475 ℃升高至650 ℃时,薄膜表面粗糙度由26.8 nm下降至24.8 nm。同时,高分辨X射线衍射仪测试表明475 ℃、5 Pa压差条件下的α-Ga2O3薄膜样品半峰全宽仅为190.8″,为高度结晶态的单晶α-Ga2O3薄膜材料。 相似文献
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38.
为保证半导体激光打标机F-θ镜头的扫描质量,实现系统像高与扫描角的线性变化,需对F-θ镜头给予一定的畸变量,并使其满足等晕条件。分析F-θ镜头工作原理及像差要求,根据1 064 nm半导体激光打标机的光源成像要求选择合适的玻璃材料,合理分配每片透镜的光焦度,以保证等晕成像;根据F-θ镜头线性成像要求,计算系统总畸变量为1.6%,系统总畸变量为系统的实际桶形畸变与相对畸变量之和;在光学系统优化设计时,引入这两项优化参数,优化过程中观察系统成像变化情况。设计结果表明:系统MTF曲线接近衍射极限,F-θ镜头相对畸变小于0.36%,各视场均方根半径均小于艾里斑直径,并且整个系统70%的能量集中在直径为16 μm的圆内,系统总畸变量为1.58%,满足设计指标要求。 相似文献
39.
SnO2TiO2 复合半导体纳米薄膜的研究进展* 总被引:5,自引:0,他引:5
本文概述了SnO2TiO2 复合半导体纳米薄膜的发展历史和研究现状,对比分析了“混合”、“核壳”和“叠层”3 种复合薄膜的结构和性能特点,着重论述了叠层结构的SnO2 /TiO2复合薄膜的光电化学和光催化特性。结合作者的研究工作,探讨了SnO2 /TiO2双层复合薄膜上下层厚度对其光催化活性的影响,指出复合薄膜光催化活性的提高可归因于电子从TiO2 向SnO2 的迁移。最后对SnO2 /TiO2复合薄膜的局限性和发展潜势做一简要分析,强调了该复合薄膜本身的应用特点。 相似文献
40.
Dong Lu Xiao-Chun Yang Bing Leng Xiao-Di Yang Cong-Wu Ge Xue-Shun Jia Xi-Ke Gao 《中国化学快报》2016,27(7):1022-1026
A series of core-expanded naphthalene diimides (NDI-DTYM) and thiophene-based derivatives (1a-c) were designed and synthesized to investigate the relationship between molecular structures and the highest occupied molecular orbital (HOMO) energy levels but has little impact on the lowest unoccupied molecular orbital (LUMO) energy levels. The results demonstrated that increasing the number of thiophene units can gradually elevate the HOMO energy levels but had little impact on the LUMO energy levels. The n-channel organic field-effect transistors (OFETs) based on 1b and 1c have demonstrated that these almost unchanged LUMO energy levels are proper to transport electrons. 相似文献