LaB6在低压强氮气和氦气中的放电特性

 研究了LaB₆在1~10 Pa氮气和氦气中的直流和脉冲放电特性以及放电过程对电极的影响。结果表明，电极直径为5 mm的LaB6氦气放电管在脉冲工作状态下可以长期稳定放电。在脉冲电压为2.2 kV、脉冲宽度10 ms、频率13.3 Hz下，脉冲峰值放电电流超过120 A。氦气放电管在放电过程中，阴极表面有离子的清洗和活化作用，可以使电极的表面逸出功降低，提高放电管的发射能力和稳定性。LaB₆作为气体放电电极具有寿命长、延迟时间短、放电电流大等优点，可用于重复强流脉冲气体放电的高压高速开关器件。     

1.5MeV LIA脉冲功率系统

本文简要介绍了1.5MeV LIA脉冲功率系统的结构、组成和设计思想;给出了开关运行参数和确定开关时间抖动指标的方法、闭环系统的总抖动对加速电压相对变化的影响、脉冲功率系统各段输出波形和电压幅度的调制关系;测量结果表明,1.5MeV LIA的运行功率和时间同步满足总体设计要求。     

Switching and Swapping of Quantum Information: Entropy and Entanglement Level

Information switching and swapping seem to be fundamental elements of quantum communication protocols. Another crucial issue is the presence of entanglement and its level in inspected quantum systems. In this article, a formal definition of the operation of the swapping local quantum information and its existence proof, together with some elementary properties analysed through the prism of the concept of the entropy, are presented. As an example of the local information swapping usage, we demonstrate a certain realisation of the quantum switch. Entanglement levels, during the work of the switch, are calculated with the Negativity measure and a separability criterion based on the von Neumann entropy, spectral decomposition and Schmidt decomposition. Results of numerical experiments, during which the entanglement levels are estimated for systems under consideration with and without distortions, are presented. The noise is generated by the Dzyaloshinskii-Moriya interaction and the intrinsic decoherence is modelled by the Milburn equation. This work contains a switch realisation in a circuit form—built out of elementary quantum gates, and a scheme of the circuit which estimates levels of entanglement during the switch’s operating.     

相位倾斜对L-G光束焦开关的影响

研究了相位倾斜L—G光束通过光阑——透镜分离系统的焦开关现象。着重研究相位倾斜对焦开关现象的影响。研究结果表明,相位倾斜影响了相对焦移量、相对跃变量和焦开关发生的位置,同时也影响焦开关出现时截断参数的取值范围。另外,截断参数也会影响焦开关发生的位置。     

氨对硅基铁纳米薄膜高温重凝核的影响

采用弧过滤离子沉积系统（arc filtered deposition,AFD）在纯硅表面制备铁纳米薄膜。研究了750℃下铁纳米薄膜在氢气氛围以及氨气氛围中重凝核的规律。研究表明,在氢气氛围中,铁纳米薄膜重凝核以后形成的铁纳米颗粒随薄膜的厚度增加以及保温时间的延长而增大;但在氨气氛围中,铁纳米薄膜重凝核后形成的纳米颗粒的尺寸随保温时间的变化更为复杂：在氨气作用的初始阶段,铁颗粒的尺寸随氨气作用时间的延长而逐渐变大,但一段时间以后,铁颗粒的尺寸又随氨气作用时间的延长而变小,直到铁颗粒平均直径达到一个最小值（大约在氨气介入后的12min）,随后铁颗粒的尺寸又逐渐变大,并最终达到一稳定值。     

FLTD三电极场畸变气体开关寿命特性

针对设计的一种场畸变气体开关,研究中间电极材料分别为不锈钢和黄铜条件下的烧蚀特性,结合开关寿命期间静态与触发特性的变化规律,获得决定开关寿命的关键因素,为三电极场畸变气体开关的性能优化提供理论支撑。研究结果表明,采用不锈钢和黄铜作为中间电极的烧蚀区域以及表面粗糙度均随着放电次数增加而增大,黄铜电极烧蚀较为严重且表面有明显的烧蚀圆斑,不锈钢电极则具有更高的表面粗糙度,阴阳极表面烧蚀存在明显差异,随着放电次数的增加,击穿点向电极边缘区域集中,影响开关的沿面绝缘特性,是导致开关寿命终结的主要原因。     

基于3×3平行排列耦合器的全光光开关的特性分析

提出了一种新型的基于3×3平行排列耦合器的全光光开关。此种光开关具有两个独立的输出端口且具有极好的偏振稳定性,消光比可达20dB。介绍了其工作原理,详细分析了信号光强度、控制光强度、光纤长度及耦合器分光比偏差等因素对各端口消光比的影响。比较了不同种类和长度光纤环的开关性能,首次得到了耦合器分光比偏差对消光比的影响曲线。     

交叉相位调制对非线性光纤环镜中光脉冲传输的影响

基于耦合非线性薛定谔方程,采用分步傅里叶方法分析了在单波长信道和WDM（波分复用）4波长信道中XPM（交叉相位调制）对高速NOLM（非线性光纤环镜）光开关中脉冲传输的影响.数值计算表明：XPM造成NOLM中信号脉冲串扰与畸变,并造成NOLM开关性能的下降.WDM系统NOLM光纤环中的同向传播的各波长之间的XPM串扰比相向脉冲之间的XPM效应的影响更大,并且波长越短输出功率越低,中间信道受XPM的影响所导致的脉座现象和走离效应比两侧波长信道严重.     

偏振模色散对非线性光纤环镜微波光子开关的影响及其补偿

建立了考虑PMD在内的NOLM微波光子开关光波传输方程,给出了基于耦合非线性薛定谔方程的分步傅里叶法,三维庞加莱球理论和琼斯传输矩阵法的数值分析模型.仿真获得在光子开关中微波直接强度调制光载波的传输过程,以及在不同调制带宽下一阶和二阶PMD对光波信号和NOLM功率传输函数的影响.指出PMD造成NOLM开关性能钝化和消光比严重恶化,并引起信号信噪比下降和旁瓣泄漏.当调制带宽大于40GHz时,二阶PMD的影响比一阶PMD更加严重.最后讨论了NOLM中的PMD补偿问题.     

Smaller Output Beam Divergence in the Slowly Opened Q-Switch Operation

The mechanism of the slowly opened Q-switch operation was investigated thoroughly. Maximum energy extraction from the resonator could be optimized, and the smallest output beam divergence could be achieved. In this article, we present a detailed analysis that has numerically verified the mode-selection mechanism in the slowly opened Q-switch operation, and the degree of the smaller output laser beam divergence that has been achieved. The mechanism of the slowly opened Q-switch operation is the inherent advantage of the passive saturable absorber in this operation. We can use the maximum energy extraction and the smallest output beam divergence results of the slowly opened Q-switch operation to design and optimize various passive saturable absorbers: plastic dye sheets, LiF:F₂⁻ color center crystals, Cr4⁺: YAG crystals, RG1000 color glass filters, and the single crystal semiconductor saturable absorber wafers that are in developed in our microchip laser systems.