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21.
Shougo Higashi 《Surface science》2006,600(3):591-597
We have studied the individual adsorption of Mn and Bi, and their coadsorption on Cu(0 0 1) by low-energy electron diffraction (LEED). For Mn, we have determined the c(2 × 2) structure formed at 300 K, whose structure had been determined by several methods. We reconfirmed by a tensor LEED analysis that it is a substitutional structure and that a previously reported large corrugation (0.30 Å) between substitutional Mn and remaining surface Cu atoms coincides perfectly with the present value. In the individual adsorption of Bi, we have found a c(4 × 2) structure, which is formed by cooling below ∼250 K a surface prepared by Bi deposition of ∼0.25 ML coverage at 300 K where streaky half-order LEED spots appear. The c(4 × 2) structure has been determined by the tensor LEED analysis at 130 K and it is a substitutional structure. In the coadsorption, we found a c(6 × 4) structure, which has been determined by the tensor LEED analysis. It is very similar to the previously determined structure of the c(6 × 4) formed by coadsorption of Mg and Bi, and embedded MnBi4 clusters are arranged in the top Cu layer instead of MgBi4. Large lateral displacements of Bi atoms in the c(6 × 4)-(Mn + Bi) suggest that the Mn atoms undergo the size-enhancement caused by their large magnetic moment. 相似文献
22.
The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0). 相似文献
23.
The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH4/SiF4 mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH4 and SiF4 radicals show that the SiH4 radicals are important in the nucleation and growth of grains. However, SiF4 radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF4 in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films. 相似文献
24.
H.S RagabA Shehap M.S Abo EllilW.H Osman F.H Abd El-Kader 《Journal of Physics and Chemistry of Solids》2002,63(10):1839-1847
Ternary-phase ceramic system of Li2O Al2O3 4SiO2 doped with CuO, FeO and TiO2 has been prepared and subjected to dc electrical conductivity and thermally stimulated depolarization current (TSDC) measurements as a function of temperature (30-250 °C) and field strength. The electrical conductivity results are explained by assuming both ionic and electronic conduction mechanisms coexist with different contributions over the whole temperature range of experiments. TSDC spectra have been found to be characterized by a broad intense relaxation peak, which can be attributed to an ionic charge polarization. The broad relaxation transitions are apparently a result of the nonuniform nature of this process. Activation energies are calculated for both dc electrical conductivity and TSDC according to Arrhenius equation and initial rise method, respectively. 相似文献
25.
S.-Y. Sheu D.-Y. Yang H.L. Selzle E.W. Schlag 《The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics》2002,20(3):557-563
Charge transport is one important example of signal transduction in a protein which is responsible for action at a distance,
and is a fundamental process in biochemical action. A model is presented in which electronic effects interact with motional
processes to combine into a bifunctional model. This model is investigated with new detailed molecular dynamics calculations
and successfully explains such action at a distance.
Received 1st February 2002 / Received in final form 26 May 2002 Published online 13 September 2002 相似文献
26.
C M Srivastava 《Pramana》1989,32(3):251-267
A theory of high temperature superconductivity in YBa2Cu3O7_δ compound has been developed on the basis of the momentum pairing of electrons through the relativistic Darwin interaction.
The transport behaviour of electrons is explained in terms of a mechanism of correlated electron transfer arising from the
electron-phonon coupling. A model Hamiltonian has been developed to describe the superconducting properties of the system.
This gives an energy gap which is higher than the BCS value. Attempts have been made to explain the absence of isotope effect,
the linear dependence of specific heat, the presence of larger temperature-independent paramagnetism in the normal phase and
the softening of some of the optic phonon modes observed in this system. 相似文献
27.
C. Maurel 《Surface science》2006,600(2):442-447
Light emitted in the tunneling junction of a scanning tunneling microscope has been used to establish the electrical characteristics of nanojunctions made of Au islands deposited on flat MoS2 surfaces. It is shown that these characteristics are those of rectifying contacts when the gold islands are isolated and that they evolve toward those of ohmic contacts when the island density increases. It is observed that the rectifying behavior also evolves over time as on infinite metal/semiconductor contacts. Using the STM tip, single gold islands can be manipulated on the MoS2 surface so that their electrical behavior can be changed depending on their position with regard to the other islands. 相似文献
28.
建立了一个四组分一维混合模型,对电子束注入大气产生大尺度等离子体的过程进行了数值模拟.结果表明了能量为140keV、流强为50mA/cm2的注入电子束,可以产生线度为0.5m,密度为1012cm-3量级的大气环境下等离子体.电子束所伴随的空间电荷效应由于等离子体的产生会很快消失,不影响后续的等离子体产生过程.电子束注入流强主要影响产生等离子体的密度,而电子束能量则同时影响其空间线度和密度.
关键词:
电子束
碰撞
电离 相似文献
29.
Eldad Herceg 《Surface science》2006,600(19):4563-4571
The formation of a well-ordered p(2 × 2) overlayer of atomic nitrogen on the Pt(1 1 1) surface and its reaction with hydrogen were characterized with reflection absorption infrared spectroscopy (RAIRS), temperature programmed desorption (TPD), low energy electron diffraction (LEED), Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS). The p(2 × 2)-N overlayer is formed by exposure of ammonia to a surface at 85 K that is covered with 0.44 monolayer (ML) of molecular oxygen and then heating to 400 K. The reaction between ammonia and oxygen produces water, which desorbs below 400 K. The only desorption product observed above 400 K is molecular nitrogen, which has a peak desorption temperature of 453 K. The absence of oxygen after the 400 K anneal is confirmed with AES. Although atomic nitrogen can also be produced on the surface through the reaction of ammonia with an atomic, rather than molecular, oxygen overlayer at a saturation coverage of 0.25 ML, the yield of surface nitrogen is significantly less, as indicated by the N2 TPD peak area. Atomic nitrogen readily reacts with hydrogen to produce the NH species, which is characterized with RAIRS by an intense and narrow (FWHM ∼ 4 cm−1) peak at 3322 cm−1. The areas of the H2 TPD peak associated with NH dissociation and the XPS N 1s peak associated with the NH species indicate that not all of the surface N atoms can be converted to NH by the methods used here. 相似文献
30.
M. Brando N. Büttgen V. Fritsch J. Hemberger H. Kaps H.-A. Krug von Nidda M. Nicklas K. Pucher W. Trinkl A. Loidl E.W. Scheidt M. Klemm S. Horn 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,25(3):289-298
We present susceptibility, microwave resistivity, NMR and heat-capacity results for Li1-xZnx(V1-yTiy)2O4 with 0 ?
x
? 0.3 and 0 ?
y
? 0.3. For all doping levels the susceptibility curves can be fitted with a Curie-Weiss law. The paramagnetic Curie-Weiss temperatures
remain negative with an average value close to that of the pure compound Θ≈ - 36 K. Spin-glass anomalies are observed in the susceptibility, heat-capacity and NMR measurements for both type of dopants.
From the temperature dependence of the spin-lattice relaxation rate we found critical-dynamic behavior in the Zn doped compounds
at the freezing temperatures. For the Ti-doped samples two successive freezing transitions into disordered low-temperature
states can be detected. The temperature dependence of the heat capacity for Zn-doped compounds does not resemble that of canonical
spin glasses and only a small fraction of the total vanadium entropy is frozen at the spin-glass transitions. For pure LiV2O4 the spin-glass transition is completely suppressed. The temperature dependence of the heat capacity for LiV2O4 can be described using a nuclear Schottky contribution and the non-Fermi liquid model, appropriate for a system close to
a spin-glass quantum critical point. Finally an (
x
/
y
,
T
)-phase diagram for the low-doping regime is presented.
Received 16 March 2001 and Received in final form 30 October 2001 相似文献