半参数方差误差模型的估计

本文综合近邻权函数法及最小二乘法，用两阶段最小二乘估计的方法得到了半参数EV模型中参数的估计量及其强相合性，渐近正态性。同时也得到了非参数函数的估计量及其强相合性，一致强相合性。     

Comparison of XYZ Model Fitting Functions for 111Cd in In3La

The XYZ model describes the interaction between nuclear probes and an electric field gradient that fluctuates among three orthogonal directions. The model presents a means to calculate the perturbation function that represents spectra obtained using perturbed angular correlation spectroscopy. Three analytic approximations of the perturbation function have been developed previously, and they are evaluated in the present paper in the context of Cd jumping among In-lattice sites in In₃La.     

中国股票市场风险的实证分析研究

本文从实证角度说明了上证指数和深证成份指数存在着GARCH现象 ,并建立了沪、深两市股指波动率的IGARCH(1,1) M模型与EGARCH(1,1) M模型。将估计的IGARCH(1,1) M模型与EGARCH(1,1) M模型比较得出 ,对上证指数的波动率 ,IGARCH(1,1) M模型与EGARCH(1,1) M模型的模拟效果基本相同 ,而对深证成份指数的波动率 ,IGARCH M模型要略优于EGARCH M模型。同时还对两市的股指收益的波动率进行了预测分析     

Cold compaction of ceramic powder: Computational analysis of the effect of pressing method and die shape

This paper deals with a computational analysis of the influence of the pressing method and part geometry on the final density distribution in the cold compaction process of ceramic alumina powders. The analysis is based on the explicit finite-element model proposed and validated in a previous study. The mechanical behavior of the processing material is described using a multisurface elastoplastic model, the modified Drucker-Prager/Cap model Published in Prikladnaya Mekhanika, Vol. 43, No. 10, pp. 129–134, October 2007.     

线性电压扫描下1VIIS器件瞬态的简单模型

本文用准平衡模型分析讨论了线性电压扫描下MIS器件的I/V瞬态.文中除了给出一般的处理方法以外，还给出了几种不同电压扫描率下I/Y特性的计算结果，并与已往的模型作了比较.     

Formulation for XPS spectral change of oxides by ion bombardment as a function of sputtering time

XPS measurement revealed that the original state of TiO₂ was changed to Ti₂O₃ and TiO by ion bombardment. TiO₂ decreased and Ti₂O₃ increased at the initial stage. TiO increased at a later stage than Ti₂O₃. Each of them saturated after enough sputtering time.A formulation was proposed in order to explain the change of XPS spectra for oxides as a function of ion sputtering time. This formulation was based on reaction equations that contain two reduction processes (from TiO₂ to Ti₂O₃ and from Ti₂O₃ to TiO), and sputtering effects. Using four fitting parameters (two reduction coefficients, sputtering yield and information depth), the present formula was fitted to the experimental results. The fitting results agree satisfactorily with the experimental results. The calculation shows that the reduction coefficient from TiO₂ to Ti₂O₃ is about ten times larger than that from Ti₂O₃ to TiO. This calculation predicts that surface composition of an oxide that is changed by ion bombardment will reach a different value depending on its bulk composition. Moreover, the present formulation can determine the chemical states of compounds changed by ion bombardment.     

Analysis of heterojunction resonant cavity-enhanced Schottky photodiodes by using two-valley transport model

The article concerns heterojunction resonant cavity-enhanced (RCE) Schottky photodiodes with GaAs in the absorption layer. The quantum efficiency and linear pulse response have thoroughly been analysed. For the first time, the response of a heterojunction photodiode has been modelled by the phenomenological model for a two-valley semiconductor. The results obtained have shown that the satellite valleys, as well as the parasitic time constant, significantly influence the response and, accordingly, have to be taken into account when analysing and optimizing RCE photodetectors.     

深能级杂质对光导半导体开关非线性特性的影响

建立了非线性GaAs光导开关深能级杂质瞬态模型的基本方程,获得了与实验现象定性吻合的电流输出,给出了平均载流子随时间演化的情况.分析结果表明,在考虑了深能级杂质的俘获、发射和碰撞电离后,有可能对非线性光导开关中发生的一系列现象做出解释,进一步的仔细分析将对非线性光导开关的设计和制作提供理论指导.     

ASYMPTOTIC BEHAVIOR OF THE DRIFT-DIFFUSION SEMICONDUCTOR EQUATIONS

This paper is devoted to the long time behavior for the Drift-diffusion semi-conductor equations. It is proved that the dynamical system has a compact, connected and maximal attractor when the mobilities are constants and generation-recombination term is the Auger model; as well as the semigroup S(t) defined by the solutions map is differential. Moreover the upper bound of Hausdorff dimension for the attractor is given.