室温固相法制备EuF3和SmF3纳米微粒

通过室温固相反应制备了不同形貌的EuF₃和SmF₃纳米微粒，并利用XRD，TEM，SEM，和XPS对产物进行了表征。研究表明氟源对所得的稀土氟化物的尺寸与形貌有着重要的影响。通过硝酸盐与NH₄F的反应得到了盘状的EuF₃和SmF₃微粒，而硝酸盐与HF·NH₄F的反应得到的是不规则的EuF₃和SmF₃微粒。EuF₃微粒的荧光光谱表明它们的发射峰的强度与尺寸与形貌有关。     

Template Based Synthesis of Porous Graphdiyne Nanosheet for Reversible and Fast NO2 Detection by UV Irradiation

Two-dimensional graphdiyne (GDY) formed by sp and sp² hybridized carbon has been found to be an efficient toxic gas sensing material by density functional theory (DFT). However, little experimental research concerning its gas sensing capability has been reported owing to the complex preparation process and harsh experimental conditions. Herein, porous GDY nanosheets are successfully synthesized through a facile solvothermal synthesis technique by using CuO microspheres (MSs) as both template and source of catalyst. The porous GDY nanosheets exhibit a broadband optical absorption, rendering it suitable for the light-driven optoelectronic gas sensing applications. The GDY-based gas sensor was demonstrated to have excellent reversible to NO₂ behaviors at 25 °C for the first time. More importantly, higher response value and faster response-recovery time once exposed to NO₂ gas molecules are achieved by the illumination of UV light. In this way, our work paves the way for the exploration of GDY-based gas detection experimentally.     

从表演者角度论述歌剧院的声学研究和设计

本文从解决歌手与乐队竞争的谜团入手,详述了歌剧院乐队演奏(缺乏高频声)和歌剧唱法(高频的歌手共振峰)的声音特点,进而提出了歌手和乐队之间平衡的声学设计(即放大歌手的歌唱声并适当降低乐队的演奏声,观众听起来歌手和乐队之间的声音保持平衡),重点论述了乐池的声学设计。然后分别从提高表演者的相互听闻(为了合奏的同步性)和提高房间的声反馈(为了控制演奏的响度)进行了论述,得出从表演者角度进行声学研究和设计的重要性。     

Light Emitting Diodes Fabricated from Liquid Phase Epitaxial InAs/InAsxP1‐x‐ySby/InAsx'P1‐x'‐y'Sby' and InAs/InAs1‐xSbx Multi‐Layers

Mid‐infrared light emitting diodes (LED) in 3‐5μm wavelength range have been fabricated from InAs/InAs_xP_1‐x‐ySb_y/InAs_x'P_1‐x'‐y'Sb_y' composition graded layer and InAs/InAsSb multilayers. The heterostructures were grown by liquid phase epitaxy (LPE) between 600 and 520°C. An output power of 3.1 mW at 11K and of 10 μW at 300 K have been obtained under a peak current of 100 mA (50 % duty ratio) from InAsSb multilayers. Recombination mechanisms for these diodes were studied by temperature‐dependent emission spectra using Fourier transform infrared (FTIR) measurement system with double modulation. The output powers of the LEDs decrease rapidly at temperatures above 153 K suggesting that nonradiative and Auger recombinations are the main limitation of the device performance at high temperatures.