Fermionic Zero Modes in Self-dual Vortex Background on a Torus

We study fermionic zero modes in the self-dual vortex background on an extra two-dimensional Riemann surface in （5＋1） dimensions. Using the generalized Abelian-Higgs model, we obtain the inner topological structure of the self-dual vortex and establish the exact self-duality equation with topological term. Then we analyze the Dirac operator on an extra torus and the effective Lagrangian of four-dimensional fermions with the self-dual vortex background. Solving the Dirac equation, the fermionic zero modes on a torus with the self-dual vortex background in two simple cases are obtained.     

ZnO晶体的偏振拉曼散射的深入研究

利用拉曼选择定则,设计了ZnO单晶的直角偏振几何配置。在室温下测量了ZnO单晶的各种振动模式的偏振拉曼散射光谱。与原先的文献相比较,初步讨论了各种振动模式的线宽和强度的变化原因。除ZnO晶体中包括非极性和极性拉曼基频振动,准横光学和准纵光学模式和振动属性被指认外,它们的高阶拉曼散射模式首先被确定。本研究结果为深入了解ZnO晶体和薄膜的宏观性质和微观结构提供了依据。     

Temperature tunability of cavity-semiconducting waveguide coupling in a two-dimensional photonic crystal

We study the coupling efficiency between a cavity resonator and semiconducting waveguide in a two-dimensional photonic crystal by varying the temperature. We used the revised plane wave expansion and finite difference time domain methods to evaluate the coupling efficiency. The photonic crystal waveguide is composed of a row of InSb semiconducting materials, and the efficiency was calculated at various temperatures. The findings indicate that the temperature can be used as a useful efficiency controller.     

Intrinsic Localized Spin-Wave Modes in an Anisotropic Ferromagnet with Dzyaloshinsky-Moriya Interaction

The existence and properties of intrinsic localized spin-wave modes in a ferromagnetic XXZ spin chain with Dzyaloshinsky-Moriya interaction are investigated analytically in the semiclassical limit. The model Hamiltonian is quantized by introducing the Dyson-Maleev transformation and the coherent state representation is chosen as the basic representation of the system. By making use of the method of multiple scales combined with a quasidiscreteness approximation, the equation of motion for the coherent-state amplitude is reduced to the nonlinear Schrödinger equation. It is shown that a bright intrinsic localized spin-wave mode whose eigenfrequency lies below the bottom of the magnon frequency band can exist in the ferromagnetic system. We also show that the system can produce a dark intrinsic localized spin-wave mode, i.e., nonpropagating kink, whose eigenfrequency is below the upper of the magnon frequency band. In addition, we find that the introduction of the Dzyaloshinsky-Moriya interaction changes wave numbers in the Brillouin-zone corresponding to the appearance of intrinsic localized spin-wave modes.     

Quantum dot resonant tunneling FET on graphene

At this paper a field effect transistor based on graphene nanoribbon (GNR) is modeled. Like in most GNR-FETs the GNR is chosen to be semiconductor with a gap, through which the current passes at on state of the device. The regions at the two ends of GNR are highly n-type doped and play the role of metallic reservoirs so called source and drain contacts. Two dielectric layers are placed on top and bottom of the GNR and a metallic gate is located on its top above the channel region. At this paper it is assumed that the gate length is less than the channel length so that the two ends of the channel region are un-gated. As a result of this geometry, the two un-gated regions of channel act as quantum barriers between channel and the contacts. By applying gate voltage, discrete energy levels are generated in channel and resonant tunneling transport occurs via these levels. By solving the NEGF and 3D Poisson equations self consistently, we have obtained electron density, potential profile and current. The current variations with the gate voltage give rise to negative transconductance.     

Discussion on the event horizon and quantum ergosphere of dynamic rotating black holes in a tunneling framework

According to the Parikh--Wilczek tunneling framework, the locations of the local horizons of dynamic rotating black holes can be worked out. The calculations show that the quantum ergosphere of the black hole is identical with the tunneling potential barrier set by particle's tunneling across the relevant horizon. Then, some discussions on the origin of the Hawking radiation will be shown.     

The influence of thermally assisted tunneling on the performance of charge trapping memory

We evaluate the influence of the thermally assisted tunneling (TAT) mechanism on charge trapping memory (CTM) cell performance by numerical simulation, and comprehensively analyse the effects of the temperature, trap depth, distribution of trapped charge, gate voltage and parameters of TAT on erasing/programming speed and retention performance. TAT is an indispensable mechanism in CTM that can increase the detrapping probability of trapped charge. Our results reveal that the TAT effect causes the sensitivity of cell performance to temperature and it could affect the operational speed, especially for the erasing operation. The results show that the retention performance degrades compared with when the TAT mechanism is ignored.     

用量子隧穿法研究带质量四极矩静态黑洞的Hawking辐射

对带质量四极矩的静态黑洞Hawking辐射的隧穿过程进行了简单直接的推导，得到了热谱.因推导过程应用了能量守恒定律，故真正的辐射不一定是纯热的.这一结果支持了这样一种观点：隧穿的辐射携带信息是可能的. 关键词： 黑洞 辐射 隧穿 能量守恒     

KLL dielectronic recombination process of He-like to O-like xenon ions

In this work,the KLL dielectronic recombination (DR) processes of highly charged He-like to O-like xenon ions are studied systematically by using a DR program,which is based on the multi-configuration Dirac-Fock (MCDF) method.The KLL DR resonant energies and the corresponding resonant strengths are calculated,emphasizing especially the effect of the Breit interaction on the DR strengths.The theoretical KLL DR spectra are obtained and compared with the latest experimental results obtained in the Shanghai Electron Beam Ion Trap.     

Self-assembly formation of the ordered nanostructure arrays induced by Be interaction with Si(1 1 1) surface

Formation of the beryllium (Be) submonolayers on the Si(1 1 1)7 × 7 surface has been studied using scanning tunneling microscopy. It has been found that Be interaction with Si(1 1 1) at 500-700 °C results in a self-assembly formation of the four various types of the highly-ordered nanostructure arrays. The nanostructure arrays develop on top of the “soft” silicide layer, which period and orientation alter with the nanostructure growth: the shorter the nanostructure period, the larger the rotation angle. The main structural parameters of the silicide layer and nanostructure arrays have been established.