One-dimensional non-nearest-neighbor random walks in the presence of traps

A one-dimensional lattice random walk in the presence ofm equally spaced traps is considered. The step length distribution is a symmetric exponential. An explicit analytic expression is obtained for the probability that the random walk will be trapped at thejth trapping site.     

平面上随机级数的性质

研究了平面上系数{Xn,n≥0}为(?)-混合序列在满足,(q>1)等条件下的随机级数的增长性及值分布,得到了比较好的结果．     

Bayesian Prediction Analysis for Growth Curve Model Using Noninformative Priors

We apply a Bayesian approach to the problem of prediction in an unbalanced growth curve model using noninformative priors. Due to the complexity of the model, no analytic forms of the predictive densities are available. We propose both approximations and a prediction-oriented Metropolis-Hastings sampling algorithm for two types of prediction, namely the prediction of future observations for a new subject and the prediction of future values for a partially observed subject. They are illustrated and compared through real data and simulation studies. Two of the approximations compare favorably with the approximation in Fearn (1975, Biometrika, 62, 89–100) and are very comparable to the more accurate Rao-Blackwellization from Metropolis-Hastings sampling algorithm.     

介质极化的瞬时相位与振幅

求解电子运动的二阶微分方程，在旋转波近似下，介质在外场突然变化时产生的瞬态感应极化与外场同频，但相位总是落后，最大落后为π/2；振幅大小与初态有关，随时间按指数规律衰减，衰减快慢由介质的阻尼系数决定。     

Phase Transition in Vertex-Reinforced Random Walks on {\mathbb{Z}} with Non-linear Reinforcement

Vertex-reinforced random walk is a random process which visits a site with probability proportional to the weight w _k of the number k of previous visits. We show that if w _k ∼ k ^α, then there is a large time T ₀ such that after T ₀ the walk visits 2, 5, or ∞ sites when α < 1, = 1, or > 1, respectively. More general results are also proven.      

基于Web的图书馆管理系统访问控制策略

针对基于Web的图书馆管理系统资源访问控制的动态性问题，提出了一种基于角色的访问控制策略描述方案．通过对基于Web的图书馆管理系统访问控制管理影响因素和访问控制需求的分析，结合NIST基于角色的访问控制统一模型标准，构造了一种基于角色的访问控制元模型．并在这一元模型的基础上，提出了一种紧凑的基于角色的访问控制XML策略描述语言框架．结果表明该访问控制策略描述语言框架适合表述动态环境下对图书馆资源的访问策略，提高了基于Web的图书馆管理系统资源访问的安全性．     

Semiconvergence in distribution of random closed sets with application to random optimization problems

The paper considers upper semicontinuous behavior in distribution of sequences of random closed sets. Semiconvergence in distribution will be described via convergence in distribution of random variables with values in a suitable topological space. Convergence statements for suitable functions of random sets are proved and the results are employed to derive stability statements for random optimization problems where the objective function and the constraint set are approximated simultaneously. The author is grateful to two anonymous referees for helpful suggestions.     

随机环境中多物种分枝随机游动

引进了随机环境中多物种分枝随机游动的一般模型.在分枝过程非灭绝的情况下,讨论了系统的状态分类,得到了系统暂留及强常返的充要条件是存在k个定义在整数集上的函数分别满足某种性质.最后给出了系统强暂留的充分条件.     

Magnetic behavior of the bond random mixed compound FE(BR x I1−x )2(x = 0.9) with Mössbauer spectroscopy

The bond random mixed compound Fe(Br_0.9I_0.1)₂ has been studied by magnetization and Mössbauer measurements. Although the zero-field cooled and field-cooled magnetization variations are not like a typical spin glass one, the Mössbauer spectrum below Néel temperature shows a hyperfine field distribution. It implies that the 10% FeI₂ mixed in FeBr₂ can be induced by the bond random effect which causes the sample to exhibit a spin glass-like behavior.     

Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE _c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE _G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E _c ). From these results, it is suggested that the PEN-FET becomes a memory device.