A Triple Crosslinking Design toward Epoxy Vitrimers and Carbon Fiber Composites of High Performance and Multi-shape Memory

It remains a challenge to use a simple approach to fabricate a multi-shape memory material with high mechanical performances. Here,we report a triple crosslinking design to construct a multi-shape memory epoxy vitrimer(MSMEV), which exhibits high mechanical properties,multi-shape memory property and malleability. The triple crosslinking network is formed by reacting diglycidyl ether of bisphenol F(DGEBF) with4-aminophenyl disulfide, γ-aminopropyltriethoxysilane(APTS) and poly(propylene glycol) bis(2-aminopropyl ether)(D2000). The triple crosslinking manifests triple functions: the disulfide bonds and the silyl ether linkages enable malleability of the epoxy network; the silyl ether linkages impart the network with high heterogeneity and broaden the glass transition region, leading to multi-shape memory property; a small amount of D2000 increases the modulus difference between the glassy and rubbery states, thereby improving the shape fixity ratio. Meanwhile,the high crosslinking density and rigid structure provide the MSMEV with high tensile strength and Young's modulus. Moreover, integrating carbon fibers and MSMEV results in shape memory composites. The superior mechanical properties of the composites and the recyclability of carbon fiber derived from the dissolvability of MSMEV make the composites hold great promise as structural materials in varied applications.     

二硫化锡纳米片阻变存储器的制备与性能

采用水热法合成了尺寸为50~100 nm的二硫化锡纳米片,并首次以二硫化锡作为阻变层材料的阻变存储器（Cu/PMMA/SnS₂/Ag,PMMA=聚甲基丙烯酸甲酯）,对其阻变性能进行了研究。结果表明： Cu/PMMA/SnS₂/Ag阻变存储器的开关比约10⁵,耐受性2.7×10³。在上述2项性能指标达到较优水平的同时,开态与关态电压分别仅约为0.28与-0.19 V。     

Improvement of resistive switching fluctuations by using one step lift‐off process

Bipolar resistive switching characteristics are investigated in ZrO₂ containing Cu thin layer devices, particularly for the self‐isolated‐structure device fabricated by one step lift‐off process. Compared with the traditional‐structure device, the self‐isolated‐structure device shows more uniform resistive switching characteristics. This is because the isolation of each device cell has negligible influence on each other and thus mitigates possible crosstalk between each cell. These results suggest that the feasibility of good stabilization of the resistive switching parameters can be obtained through one step lift‐off process. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Shape memory behavior in Fe3Al-modeling and experiments

The Fe₃Al alloy with D0₃ structure exhibits large recoverable strains due to reversible slips. Tension and compression experiments were conducted on single crystals of Fe₃Al, and the onset of slip in forward and reverse directions were obtained utilizing high-resolution digital image correlation technique. The back stress provides the driving force for reversal of deformation upon unloading, resulting in a superelastic phenomenon as in shape memory alloys. Using density functional theory simulations, we obtain the energy barriers (GSFE – generalized stacking fault energy) for {1?1?0}〈1?1?1〉 and {1?1?2}〈1?1?1〉 slips in D0₃ Fe₃Al and the elastic moduli tensor, and undertake anisotropic continuum calculations to obtain the back stress and the frictional stress responsible for reversible slip. We compare the theoretically obtained slip stress magnitudes (friction and back stress) with the experimental measurements disclosing excellent agreement.     

Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps

Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method,followed by thermal annealing to form the Si nanocrystals(Si-NCs)embedded in Si Nx floating gate MOS structures.The capacitance–voltage(C–V),current–voltage(I–V),and admittance–voltage(G–V)measurements are used to investigate the charging characteristics.It is found that the maximum flat band voltage shift(△VFB)due to full charged holes(～6.2 V)is much larger than that due to full charged electrons(～1 V).The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements,respectively.From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface.Combining the results of C–V and G–V measurements,we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism.The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.     

Oligosiloxane Functionalized with Pendant (1,3‐Bis(9‐carbazolyl)benzene) (mCP) for Solution‐Processed Organic Electronics

A new oligosiloxane derivative (ODCzMSi) functionalized with the well‐known 1,3‐bis(9‐carbazolyl)benzene (mCP) pendant moiety, directly linked to the silicon atom of the oligosiloxane backbone, has been synthesized and characterized. Compared to mCP, the attachment of the oligosiloxane chain significantly improves the thermal and morphological stabilities with a high decomposition temperature (T_d=540 °C) and glass transition temperature (T_g=142 °C). The silicon–oxygen linkage of ODCzMSi disrupts the backbone conjugation and maintains a high triplet energy level (E_T=3.0 eV). A phosphorescent organic light‐emitting diode (PhOLED) using iridium bis(4,6‐difluorophenyl)pyridinato‐N,C² picolinate (FIrpic) as the emitter and ODCzMSi as the host shows a relatively low turn‐on voltage of 5.0 V for solution‐processed PhOLEDs, maximum external quantum efficiency of 9.2 %, and maximum current efficiency of 17.7 cd A^?1. The overall performance of this device is competitive with the best reported solution‐processed blue PhOLEDs. Memory devices using ODCzMSi as an active layer exhibit non‐volatile write‐once read‐many‐times (WORM) characteristics with high stability in retention time up to 10⁴ s and a low switch on voltage. This switching behaviour is explained by different stable conformations of ODCzMSi with high or low conductivity states which are obtained under the action of electric field through a π–π stacking alignment of the pendant aromatic groups. These results with both PhOLEDs and memory devices demonstrate that this oligosiloxane–mCP hybrid structure is promising and versatile for high performance solution‐processed optoelectronic applications.     

Programmable Polymer‐Based Supramolecular Temperature Sensor with a Memory Function

A new class of polymeric thermometers with a memory function is reported that is based on the supramolecular host–guest interactions of poly(N‐isopropylacrylamide) (PNIPAM) with side‐chain naphthalene guest moieties and the tetracationic macrocycle cyclobis(paraquat‐p‐phenylene) (CBPQT⁴⁺) as the host. This supramolecular thermometer exhibits a memory function for the thermal history of the solution, which arises from the large hysteresis of the thermoresponsive LCST phase transition (LCST=lower critical solution temperature). This hysteresis is based on the formation of a metastable soluble state that consists of the PNIPAM–CBPQT⁴⁺ host–guest complex. When heated above the transition temperature, the polymer collapses, and the host–guest interactions are disrupted, making the polymer more hydrophobic and less soluble in water. Aside from providing fundamental insights into the kinetic control of supramolecular assemblies, the developed thermometer with a memory function might find use in applications spanning the physical and biological sciences.     

Mechanically Adaptive and Shape‐Memory Behaviour of Chitosan‐Modified Cellulose Whisker/Elastomer Composites in Different pH Environments

Biomimetic polymer composites with water‐active mechanically adaptive and shape‐memory behaviour in different pH environments are synthesised by using chitosan‐modified cellulose whiskers (CS‐CWs) as the stimulus‐responsive phase and thermoplastic polyurethane (TPU) as the resilient matrix. The effect of surface modification on the mechanically adaptive behaviour of CS‐CW/TPU composites is investigated by using three representative solutions with various pH values. The results show that surface modification significantly enhances the modulus contrast under wet and dry conditions with the acidic solution as the stimulus, while maintaining the high modulus contrast with the basic solution as the stimulus. CS‐CW/TPU composites also exhibit excellent shape‐memory effects in all three solutions that are comparable to those pristine CW/TPU composites. Furthermore, activation of force generation in the stretched CS‐CW/TPU composites by water absorption/desorption was observed.     

Thermodynamic and shape memory properties of TPI/HDPE hybrid shape memory polymer

The traditional processing technology of shape memory polymer composites is complex and the cost of high performance filler is high. Therefore, low-cost high density polyethylene (HDPE) was introduced into trans-1,4-polyisoprene (TPI) matrix as reinforcing phase, and a novel shape memory polymer was prepared by mechanical melt blending, which fully exerted the excellent properties of plastic and rubber. Because of the difference in molecular chain distribution between different blend ratios of TPI/HDPE hybrid SMPCs specimens, the change of the blend ratio of the two components affects the thermodynamic and shape memory properties of the SMPCs. A series experimental results show that the TPI/HDPE hybrid SMPCs with the blend ratio of 80/20 has excellent thermodynamic and shape memory properties. And we believe that the relevant conclusions of this study can provide valuable design reference for the development of high-performance TPI SMPCs.