The dynamics of triple-well trapped Bose-Einstein condensates with atoms feeding and loss effects

In this paper, we consider the macroscopic quantum tunnelling and self-trapping phenomena of Bose-Einstein condensates （BECs） with three-body recombination losses and atoms feeding from thermal cloud in triple-well potential. Using the three-mode approximation, three coupled Gross-Pitaevskii equations （GPEs）, which describe the dynamics of the system, are obtained. The corresponding numerical results reveal some interesting characteristics of BECs for different scattering lengths. The self-trapping and quantum tunnelling both are found in zero-phase and ：r-phase modes. Furthermore, we observe the quantum beating phenomenon and the resonance character during the self-trapping and quantum tunnelling. It is also shown that the initial phase has a significant effect on the dynamics of the system.     

Scheme for the implementation of 1→3 optimal phase-covariant quantum cloning in ion-trap systems

This paper proposes a scheme for the implementation of 1→ 3 optimal phase-covariant quantum cloning with trapped ions. In the present protocol, the required time for the whole procedure is short due to the resonant interaction, which is important in view of decoherence. Furthermore, the scheme is feasible based on current technologies.     

Analysis of a recent experiment seemingly favouring local realism against quantum mechanics

A recent experiment by Brida et al. [Eur. Phys. J. D 44, 547 (2007)] is analyzed with the conclusion that the results disagree with standard quantum predictions but fit a simple local hidden variables model. New experiments are proposed which might throw new light on the anomaly.     

Spontaneous decay of an excited atom placed near a rectangular plate

Using the Born expansion of the Green tensor, we consider the spontaneous decay rate of an excited atom placed in the vicinity of a rectangular plate. We discuss the limitations of the commonly used simplifying assumption that the plate extends to infinity in the lateral directions and examine the effects of the atomic dipole moment orientation, atomic position, and plate boundary and thickness on the atomic decay rate. In particular, it is shown that due to the plate finite size, the spontaneous decay may be inhibited even when the atom is situated very close to the surface, and that in the boundary region, the spontaneous decay rate can be strongly modified.     

Ether drift experiments and electromagnetic momentum

Propagation of Aharonov-Bohm matter waves and light waves in moving media is characterized by the interaction electromagnetic momentum. Thus, recent models of light propagation in moving rarefied media justify and call for an optical experiment of the Mascart-Jamin type, capable of testing the modern interpretations of ether drift experiments.     

Generation of maximally entangled atom pairs in driven dissipative cavity QED systems

We investigate the entanglement of an open tripartite system where a cavity field mode in thermal equilibrium is off-resonantly coupled with two atoms that are simultaneously driven by a resonant coherent field. For moderately detuned atom-field coupling and strong atomic driving we show the generation, at given interaction times and for low enough cavity decay rates, of atomic Bell states and of Bell state superpositions relevant for quantum gates implementation. The system can oscillate between bi-separable and fully separable states. Also we describe the distribution of quantum correlations between the atom-atom and the two atom-field subsystems. In the dispersive coupling regime with strongly driven atoms we show the generation of nearly stationary Bell states which remain protected from cavity dissipation.     

Fabrication of high-quality submicron Nb/Al--AlOx/Nb tunnel junctions

Nb/Al-AlOx/Nb tunnel junctions are often used in the studies of macroscopic quantum phenomena and superconducting qubit applications of the Josephson devices. In this work, we describe a convenient and reliable process using electron beam lithography for the fabrication of high-quality, submicron-sized Nb/Al-AlOx/Nb Josephson junctions. The technique follows the well-known selective Nb etching process and produces high-quality junctions with Vm=100 mV at 2.3 K for the typical critical current density of 2.2 kA/cm^2, which can be adjusted by controlling the oxygen pressure and oxidation time during the formation of the tunnelling barrier. We present the results of the temperature dependence of the sub-gap current and in-plane magnetic-field dependence of the critical current, and compare them with the theoretical predictions.     

Size-dependent optical properties and carriers dynamics in CdSe/ZnS quantum dots

Size-dependence of optical properties and energy relaxation in CdSe/ZnS quantum dots （QDs） were investigated by two-colour femtosecond （fs） pump-probe （400/800 nm） and picosecond time-resolved photoluminescence （ps TRPL） experiments. Pump-probe measurement results show that there are two components for the excited carriers relaxation, the fast one with a time constant of several ps arises from the Auger-type recombination, which shows almost particle sizeindependence. The slow relaxation component with a time constant of several decades of ns can be clearly determined with ps TRPL spectroscopy in which the slow relaxation process shows strong particle size-dependence. The decay time constants increase from 21 to 34 ns with the decrease of particle size from 3.2 to 2.1 nm. The room-temperature decay lifetime is due to the thermal mixing of bright and dark excitons, and the size-dependence of slow relaxation process can be explained very well in terms of simple three-level model.     

Two-vibron bound states in the β--Fermi--Pasta--Ulam model

This paper studies the two-vibron bound states in the β- Fermi Pasta-Ulam model by means of the number conserving approximation combined with the number state method. The results indicate that on-site, adjacent-site and mixed two-vibron bound states may exist in the model. Specially, wave number has a significant effect on such bound states, which may be considered as the quantum effects of the localized states in quantum systems.     

Growth and characterization of InAs quantum dots with low-density and long emission wavelength

The growth parameters affecting the deposition of self-assembled InAs quantum dots （QDs） on GaAs substrate by low-pressure metal-organic chemical vapor deposition （MOCVD） are reported. The low-density InAs QDs （- 5 × 10^8cm^-2） are achieved using high growth temperature and low InAs coverage. Photoluminescence （PL） measurements show the good optical quality of low-density QDs. At room temperature, the ground state peak wavelength of PL spectrum and full-width at half-maximum （FWHM） are 1361 nm and 23 meV （35 nm）, respectively, which are obtained as the GaAs capping layer grown using triethylgallium （TEG） and tertiallybutylarsine （TBA）. The PL spectra exhibit three emission peaks at 1361, 1280, and 1204 nm, which correspond to the ground state, the first excited state, and the second excited state of the ODs, respectively.