Elastic behaviour of an edge dislocation near a sharp crack emanating from a semi-elliptical blunt crack

The interaction between an edge dislocation and a crack emanating from a semi-elliptic hole is dealt with. Utilizing the complex variable method, closed form solutions are derived for complex potentials and stress fields. The stress intensity factor at the tip of the crack and the image force acting on the edge dislocation are also calculated. The influence of the morphology of the blunt crack and the position of the edge dislocation on the shielding effect to the crack and the image force is examined in detail. The results indicate that the shielding or anti-shielding effect to the stress intensity factor increases acutely when the dislocation approaches the tip of the crack. The effect of the morphology of the blunt crack on the stress intensity factor of the crack and the image force is very significant.     

The 2.7 K black-body radiation background reference frame

This paper reports that the directional temperature is used to present a scheme for deducing the velocity of the reference frame where the black-body which produces the 2.7 K radiation background is at rest.The new renormalized relativistic thermodynamics lays the foundations of the method.     

真空短间隙微弧级联效应观测

利用0.5 mm间隙微通道板成像器观测了微弧放电的斑点级联效应.实验发现,微弧阴极斑点的运动轨迹呈多类型的折线轨迹,斑点间隙在200—300 μm,首发射阴极斑点的放电强度比次级斑点高一个量级以上,而且次级斑点之间的放电强度相对稳定,次级斑点在放电阴极表面无融蚀现象.实验表明,次级斑点产生机制与首发射存在较强的依赖关系. 关键词： 阴极斑点 微弧级联 微通道板成像器     

Influence of the image charge effect on the hydrogen-like impurity-bound polaron in a spherical quantum dot in the presence of an electric field

We have investigated the influence of an external electric field on the binding energies and polaronic shifts of the ground and some first few excited states of a hydrogenic impurity in a spherical quantum dot by taking into account the image charge effect. By using Landau–Pekar variational method the general analytical expression is obtained for the impurity bound-polaron energies. It has been numerically identified the conditions (electric field, nominal radius of quantum dot, etc.) in which the bound-polaron states can be existence in GaAs quantum dot. We have shown that the polaronic shifts in the binding energy of 1s-like state are the same in cases with and without image charge effect while they for 2s-like state are not coincide and have different monotonic behavior versus confinement potential. Electron–phonon interaction lifts the degeneracy of the 2px-, 2py-, and 2pz-like states of a donor impurity and reduces their binding energies.     

Temperature-dependent specific heat of suspended platinum nanofilms at 80-380 K

Metallic nanofilms are important components of nanoscale electronic circuits and nanoscale sensors. The accurate characterization of the thermophysical properties of nanofilms is very important for nanoscience and nanotechnology. Currently, there is very little specific heat data for metallic nanofilms, and the existing measurements indicate distinct differences according to the nanofilm size. The present work reports the specific heats of 40-nm-thick suspended platinum nanofilms at 80-380 K and ~5×10^-4 Pa using the 3ω method. Over 80-380 K, the specific heats of the Pt nanofilms range from 166-304 J/(kg·K), which are 1.65-2.60 times the bulk values, indicating significant size effects. These results are useful for both scientific research in nanoscale thermophysics and evaluating the transient thermal response of nanoscale devices.     

xF3(x,Q2) Structure Function and Gross-Llewellyn Smith Sum Rule with Nuclear Effect and Higher Twist Correction

We present an analysis of the xF₃(x,Q²) structure function and Gross-Llewellyn Smith(GLS) sum rule taking into account the nuclear effects and higher twist correction. This analysis is based on the results presented in[N.M. Nath, et al., Indian J. Phys. 90 (2016) 117]. The corrections due to nuclear effects predicted in several earlier analysis are incorporated to our results of xF₃(x,Q²) structure function and GLS sum rule for free nucleon, corrected upto next-next-to-leading order (NNLO) perturbative order and calculate the nuclear structure function as well as sum rule for nuclei. In addition, by means of a simple model we have extracted the higher twist contributions to the non-singlet structure function xF₃(x,Q²) and GLS sum rule in NNLO perturbative orders and then incorporated them to our results. Our NNLO results along with nuclear effect and higher twist corrections are observed to be compatible with corresponding experimental data and other phenomenological analysis.     

Numerical investigation of a coupled moving boundary model of radial flow in low-permeable stress-sensitive reservoir with threshold pressure gradient

The threshold pressure gradient and formation stress-sensitive effect as the two prominent physical phenomena in the development of a low-permeable reservoir are both considered here for building a new coupled moving boundary model of radial flow in porous medium. Moreover, the wellbore storage and skin effect are both incorporated into the inner boundary conditions in the model. It is known that the new coupled moving boundary model has strong nonlinearity. A coordinate transformation based fully implicit finite difference method is adopted to obtain its numerical solutions. The involved coordinate transformation can equivalently transform the dynamic flow region for the moving boundary model into a fixed region as a unit circle, which is very convenient for the model computation by the finite difference method on fixed spatial grids. By comparing the numerical solution obtained from other different numerical method in the existing literature, its validity can be verified. Eventually, the effects of permeability modulus, threshold pressure gradient, wellbore storage coefficient, and skin factor on the transient wellbore pressure, the derivative, and the formation pressure distribution are analyzed respectively.     

Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

The damage effect and mechanism of the electromagnetic pulse(EMP) on the GaAs pseudomorphic high electron mobility transistor(PHEMT) are investigated in this paper. By using the device simulation software, the distributions and variations of the electric field, the current density and the temperature are analyzed. The simulation results show that there are three physical effects, i.e., the forward-biased effect of the gate Schottky junction, the avalanche breakdown, and the thermal breakdown of the barrier layer, which influence the device current in the damage process. It is found that the damage position of the device changes with the amplitude of the step voltage pulse. The damage appears under the gate near the drain when the amplitude of the pulse is low, and it also occurs under the gate near the source when the amplitude is sufficiently high, which is consistent with the experimental results.     

HL-2A 装置上动态斯塔克效应偏振仪研究

在HL-2A 装置上发展了两类动态斯塔克效应(MSE)偏振仪并应用于磁场倾斜角的测量。其中被称为比值法的MSE 系统误差可以被控制在±0.15°以内。在HL-2A 装置实验中,利用该方法成功获得7 个空间点、径向覆盖范围为24cm 的磁场倾斜角剖面分布,其时间分辨可达到40ms。应用平衡重建代码(EFIT)结合MSE 测量数据的限定,可以得到安全因子(q)的径向分布,其中q=1 面的位置与软X 射线测量得到锯齿振荡反转面的位置一致。调制法MSE 在标定实验中误差也可控制在±0.15°以内。实验结果表明偏振片透振方向与双光学弹性调制器 (dual PEM)快轴夹角平分线的偏差对系统的线性和误差均有较大的影响。目前,该系统已经建成一个空间通道,测得磁场倾斜角的时间分辨可以达到20ms。     

超深亚微米互补金属氧化物半导体器件的剂量率效应

对0.18 μm互补金属氧化物半导体(CMOS)工艺的N型金属氧化物半导体场效应晶体管(NMOSFET)及静态随机存储器(SRAM)开展了不同剂量率下的电离总剂量辐照试验研究. 结果表明: 在相同累积剂量, SRAM的低剂量率辐照损伤要略大于高剂量率辐照的损伤, 并且低剂量率辐照损伤要远大于高剂量率辐照加与低剂量率辐照时间相同的室温退火后的损伤. 虽然NMOSFET 低剂量率辐照损伤略小于高剂量率辐照损伤, 但室温退火后, 高剂量率辐照损伤同样要远小于低剂量率辐照损伤. 研究结果表明0.18 μm CMOS工艺器件的辐射损伤不是时间相关效应. 利用数值模拟的方法提出了解释CMOS器件剂量率效应的理论模型.