Ground state energy of N Frenkel excitons

By using the composite many-body theory for Frenkel excitons we have recently developed, we here derive the ground state energy of N Frenkel excitons in the Born approximation through the Hamiltonian mean value in a state made of N identical Q = 0 excitons. While this quantity reads as a density expansion in the case of Wannier excitons, due to many-body effects induced by fermion exchanges between N composite particles, we show that the Hamiltonian mean value for N Frenkel excitons only contains a first order term in density, just as for elementary bosons. Such a simple result comes from a subtle balance, difficult to guess a priori, between fermion exchanges for two or more Frenkel excitons appearing in Coulomb term and the ones appearing in the N exciton normalization factor – the cancellation being exact within terms in 1/N_s where N_s is the number of atomic sites in the sample. This result could make us naively believe that, due to the tight binding approximation on which Frenkel excitons are based, these excitons are just bare elementary bosons while their composite nature definitely appears at various stages in the precise calculation of the Hamiltonian mean value.     

Sideband structure spontaneous spectrum without the rotating wave approximation

The effects of the non-rotating wave approximation (non-RWA) on the spontaneous emission of a V-type three-level atom are studied, where the excited states are coupled to a common ground state by a weak laser field and the upper-level doublet is driven by a strong microwave field. When the non-RWA is applied to the interaction of the atom with the microwave field, for some values of the parameters involved, the spontaneous emission spectrum is comprised of a central peak and a series of sidebands with a constant spacing of the microwave frequency, and the central peak and/or sidebands can be split into two components. The physical interpretation of the spectral characteristics is given in light of the dressed states.     

Sequence‐related amplified polymorphism,an effective molecular approach for studying genetic variation in Fasciola spp. of human and animal health significance

In the present study, a recently described molecular approach, namely sequence‐related amplified polymorphism (SRAP), which preferentially amplifies ORFs, was evaluated for the studies of genetic variation among Fasciola hepatica, Fasciola gigantica and the “intermediate” Fasciola from different host species and geographical locations in mainland China. Five SRAP primer combinations were used to amplify 120 Fasciola samples after ten SRAP primer combinations were evaluated. The number of fragments amplified from Fasciola samples using each primer combination ranged from 12 to 20, with an average of 15 polymorphic bands per primer pair. Fifty‐nine main polymorphic bands were observed, ranging in size from 100 to 2000 bp, and SRAP bands specific to F. hepatica or F. gigantica were observed. SRAP fragments common to F. hepatica and the “intermediate” Fasciola, or common to F. gigantica and the “intermediate” Fasciola were identified, excised and confirmed by PCR amplification of genomic DNA using primers designed based on sequences of these SRAP fragments. Based on SRAP profiles, unweighted pair‐group method with arithmetic averages clustering algorithm categorized all of the examined representative Fasciola samples into three groups, representing the F. hepatica, the “intermediate” Fasciola, or the F. gigantica. These results demonstrated the usefulness of the SRAP technique for revealing genetic variability between F. hepatica, F. gigantica and the “intermediate” Fasciola, and also provided genomic evidence for the existence of the “intermediate” Fasciola between F. hepatica and F. gigantica. This technique provides an alternative and a useful tool for the genetic characterization and studies of genetic variability in parasites.     

Faceting and stability of smectic A droplets on a solid substrate

It is shown that a smectic A droplet deposited on a solid substrate treated for strong homeotropic anchoring is faceted at the top in spite of the fact that there are no steps at the free surface, but instead edge dislocations in the bulk. The radius of the facet and the full profile of the curved part of the droplet are determined as a function of the temperature in the vicinity of a nematic-smectic A phase transition. It is shown that the observed profiles do not correspond to the actual equilibrium shape, but to metastable configurations close to their point of marginal stability. In addition, we predict that the profiles must be different for a given temperature depending on whether the droplet has been heated or cooled down to reach this temperature. Finally, we discuss the problem of the formation of giant dislocations in big droplets (Grandjean terraces).     

d(C4)相关序列形成四分子i-Motif结构的电喷雾质谱研究

设计了与富含胞嘧啶(C)的DNA序列d(C4)相关的DNA序列d(C4), d(TC4), d(AC4), d(T2C4), d(A2C4), d(C4T), d(C4A)和d(TC4T); 采用电喷雾质谱测定发现这些序列形成四分子非共价复合物离子, 根据离子的相对丰度可确定形成四链i-motif结构的数量和可能性; 同时考察了腺嘌呤(A)和胸腺嘧啶(T)在d(C4)序列的5'和3'端对其形成四分子i-motif结构的影响. 结果表明, 在d(C4)的5'端增加A碱基或T碱基更易形成四分子复合物; 5'端含T碱基比含A碱基更利于形成四分子复合物; 而在d(C4)序列中增加2个A碱基或T碱基比增加相应的单个碱基形成了更高丰度的四分子离子峰.     

双状态切换下BVP振子的复杂行为分析

非线性切换系统具有广泛的工程背景,而传统的非线性理论不能直接用来解决其中的问题,因而成为当前国内外热点和前沿课题之一. 目前相关工作大都是围绕固定时间或单状态切换开展的,而实际工程系统大都属于多状态切换问题,同时多状态切换涉及到更为丰富的动力学行为. 本文基于两广义BVP 振子,通过引入双向切换开关,构建了双状态切换下的非线性动力学模型,进而研究状态切换导致的各种运动模式及其相应的产生机制. 应用非光滑系统的Poincaré映射理论,推导了双状态切换下的Lyapunov 指数的计算公式,结合子系统的分岔分析,得到了切换系统随分岔参数变化的动力学演化过程及其相应的最大Lyapunov 指数的变化情况. 得到了双状态切换条件下系统存在着各种形式的振荡行为,分析了诸如周期突变等现象及通往混沌的倍周期分岔道路,揭示了不同运动模式的产生机制及倍周期序列的本质. 与固定时间切换和单状态切换系统不同,双临界状态切换系统存在着更为丰富的非线性现象,其主要原因在于双状态切换会产生更多的切换点,且切换点的位置更加多变. 同时切换系统的倍周期分岔序列与光滑系统中的倍周期分岔序列不同,切换系统的倍周期分岔序列只对应于切换点数目的成倍增加,而其相应的周期一般不对应于严格的周期倍化过程.      

Multiexciton molecules in the hexaborides

We investigate multiexciton bound states in a semiconducting phase of divalent hexaborides. Due to three degenerate valleys in both the conduction and valence bands the binding energy of a 6-exciton molecule is greatly enhanced by the shell effect. The ground state energies of multiexciton molecules are calculated using the density functional formalism. We also show that charged impurities stabilize multiexciton complexes leading to condensation of localized excitons. These complexes can act as nucleation centers of local moments. Received 24 October 2000     

SiC bonding in ( C 60 ) n Si m clusters

This paper deals with a new type of SiC bonding where silicon atom seems to bridge C₆₀ molecules. We have studied films obtained by deposition of (C₆₀)_nSi_m clusters prepared in a laser vaporization source. Prior deposition, free ionized clusters were studied in a time-of-flight mass spectrometer. Mixed clusters (C₆₀)_nSi_m were clearly observed. Abundance and photofragmentation mass spectroscopies revealed the relatively high stability of the (C₆₀)_nSi _n ⁺ , (C₆₀)_nSi _{n - 1} ⁺ and (C₆₀)_nSi _{n - 2} ⁺ species. This observation is in favor of the arrangement of these complexes as polymers where the C₆₀ cages may be bridged by a silicon atom. Free neutral clusters are then deposited onto substrate making up a nanogranular thin film (≃ 100 nm). The film is probed by Auger and X-ray photoemission spectroscopies, but above all by surface enhanced Raman scattering. The results suggest an unusual chemical bonding between silicon and carbon and the environment of the silicon atom is expected to be totally different from the sp³ lattice: ten or twelve carbon neighbors might surround silicon atom. The bonding is discussed to the light of the so-called fullerene polymerization as observed for pure fullerite upon laser irradiation. This opens a new route for bridging C₆₀ molecules together with an appreciable energy bonding, since the usual van der Waals bonding in fullerite could be replaced by an ionocovalent bond. Such an assumption must be checked in the future by XAS and EXAFS experiments. Received 15 November 2000     

Entanglement and the factorization-approximation

For a bi-partite quantum system defined in a finite dimensional Hilbert-space we investigate in what sense entanglement change and interactions imply each other. For this purpose we introduce an entanglement-operator, which is then shown to represent a non-conserved property for any bi-partite system and any type of interaction. This general relation does not exclude the existence of special initial product states, for which the entanglement remains small over some period of time, despite interactions. For this case we derive an approximation to the full Schr?dinger-equation, which allows the treatment of the composite systems in terms of product states. The induced error is estimated. In this factorization-approximation one subsystem appears as an effective potential for the other. A pertinent example is the Jaynes-Cummings model, which then reduces to the semi-classical rotating wave approximation. Received 8 June 2001     

Electron-hole diagrams versus exciton diagrams: the simplest problem on interacting excitons

We study the interaction of an exciton with a distant metal, which is the simplest problem on interacting excitons: The semiconductor and metal electrons being “different” species, we do not have to worry about the tricky consequences of Pauli exclusion between identical carriers, which appear in any other problem on interacting excitons. We show how the exciton absorption, in the presence of semiconductor-metal interaction, can be derived in a very simple and transparent way from an exciton diagram procedure, provided that we use the appropriate exciton-metal interaction vertex, which contains the scattering from an exciton state to another exciton state under a Coulomb excitation. We also show that the resolution of this problem using standard electron-hole diagrams is dreadfully complicated at the lowest order in the semiconductor-metal interaction already, preventing a full calculation of the exciton-metal coupling from this usual technique. Received 26 February 2001