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11.
为了研制低损耗、高性能的193 nm氟化物增透膜,研究了基底和不同氟化物材料组合对氟化物增透膜的影响。在熔石英基底上,将挡板法和预镀层技术相结合,采用热舟蒸发方式制备了不同氟化物材料组合增透膜,对增透膜的剩余反射率和光学损耗等光学特性,以及表面粗糙度和应力等特性进行了测量和比较。在分析比较和优化的基础上,设计制备的3层1/4波长规整膜系AlF3/LaF3增透膜在193 nm的剩余反射率低于0.14%,单面镀膜增透膜的透射率为93.85%,增透膜表面均方根粗糙度为0.979 nm,总的损耗约为6%。要得到高性能的193 nm增透膜,应选用超级抛光基底。 相似文献
12.
实验研究发现抽运功率密度(或抽运能量)的波动引起的受激布里渊散射(SBS)反射率的不稳定程度受实验参数(抽运能量、介质气压和透镜焦距)的影响.当抽运能量、介质气压和透镜焦距这三个参数同时满足下列条件时可以获得稳定的输出:抽运能量超过5倍的SBS阈值,介质气压在16×105Pa和透镜焦距在15—50cm的范围内;同时还发现当改变实验参数时SBS反射率与稳定性的变化规律完全一致,反射率越高稳定性越好.通过理论分析得到 SBS反射率的相对稳定度实际上是受GIL因子的影响,理论计算与实验符合得很好.
关键词:
KrF激光
受激布里渊散射
反射率
稳定度 相似文献
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Chemical reactions occurring at the mineral–water interface are controlled by an interfacial layer, nanometers thick, whose properties may deviate from those of the respective bulk mineral and water phases. The molecular-scale structure of this interfacial layer, however, is poorly constrained, and correlations between macroscopic phenomena and molecular-scale processes remain speculative. The application of high-resolution X-ray scattering techniques has begun to provide substantial new insights into the molecular-scale structure of the mineral–water interface. In this review, we describe the characteristics of synchrotron-based X-ray scattering techniques that make them uniquely powerful probes of mineral–water interfacial structures and discuss the new insights that have been derived from their application. In particular, we focus on efforts to understand the structure and distribution of interfacial water as well as their dependence on substrate properties for major mineral classes including oxides, carbonates, sulfates, phosphates, silicates, halides and chromates. We compare these X-ray scattering results with those from other structural and spectroscopic techniques and integrate these to provide a conceptual framework upon which to base an understanding of the systematic variation of mineral–water interfacial structures. 相似文献
15.
Abstract The density dependence of the optical properties of expanded cesium has been investigated by means of reflectivity measurements in the range 0.5 – 4.0 eV. The dielectric functions ?1 (ω) and ?2(ω) have been derived by means of a modified Kramers-Kronig analysis. The data give useful information about the variation of the electronic structure of liquid cesium with large changes in density, large enough to reveal the existence of precursors of the metal-nonmental transition. 相似文献
16.
The review addresses swelling of polyelectrolyte multilayers in water. Different models for the determination of the water content are compared. It is clearly shown that voids under dry conditions present cavities for water which contribute to the water content of the multilayer in the swollen state. This so-called “void water” does not lead to any changes in thickness but in scattering length density during swelling. The “swelling water” leads to both changes in scattering length density and in thickness. Depending on the preparation conditions like the type polymers, polymer charge density, ionic strength and type of salt the ratio of “void water” differs between 1 and 15 vol.% while the amount of “swelling water” is of several ten's of vol.%. 相似文献
17.
Jun Dai Lin Li LiPing He KangCheng Ruan HuiBin Lu KuiJuan Jin GuoZhen Yang 《中国科学:物理学 力学 天文学(英文版)》2014,57(11):2039-2042
In this work, we parallelly detected the specific binding between microarray targets including 12 different kinds of proteins and the probe solution containing five corresponding antibodies and quantitatively analyzed the interactions between CDH13 and solution phase anti-CDH13 at six different probe concentrations by oblique-incidence reflectivity difference (OIRD) method in label-free format. The detection sensitivity reached 10 ng/mL. The experimental results indicate that the OIRD method is a promising and competing technique not only in research work but also in clinic. 相似文献
18.
Kamil Wojciechowski Anna Brzozowska Sebastien Cap Witold Rzodkiewicz Thomas Gutberlet 《Applied Surface Science》2009,256(1):274-279
Adsorption of two alkylated N,N′-diaza-18-crown-6 ethers (decyl- and hexadecyl-derivatives, ACE-10 and ACE-16, respectively) on solid surfaces was studied by using contact angle and neutron reflectivity measurements. The solid substrates used were (a) Si covered with a native oxide layer (Si/SiO2) and (b) Si with sputtered Pt layer (Si/Pt). The sensitivity of neutron reflectivity was drastically improved by applying the intermediate Pt layer of 150 Å, which gave rise to several Kiessig fringes in the experimentally accessible q-range. The position of the fringes is very sensitive to slight changes of the interfacial composition induced by adsorption of a thin monolayer, otherwise very difficult to detect. Unfortunately, in the studied case this sensitivity is immediately lost due to undesired adsorption of a protonated material on the Pt surface exposed to the lab air. A decrease of surface energy (increase of contact angle) of both Si/SiO2 and Si/Pt upon exposure to toluene solutions of ACEs suggests that the latter are attached to the surface via the hydrophilic azacrown ether head with alkyl chains standing upright towards the liquid phase. 相似文献
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20.
Tomohiro Sakata Shingo Ogawa Keiko Inoue Yumiko Shimizu Yusaku Tanahashi 《Surface and interface analysis : SIA》2022,54(6):661-666
To systematically evaluate the quality of SiNx films in multi-stacked structures, we investigated the effects of post-deposition annealing (PDA) on the film properties of SiNx within the SiO2/SiNx/SiO2/Si stacked structure by performing X-ray photoelectron spectroscopy (XPS), X-ray reflectivity (XRR), Fourier transform infrared (FT-IR) spectroscopy, and scanning transmission electron microscope–electron energy loss spectroscopy (STEM-EELS) analyses. The XPS results showed that PDA induces the oxidation of the SiNx layer. In particular, new finding is that Si-rich SiNx in the SiNx layer is preferentially oxidized by PDA even in multi-stacked structure. The XRR results showed that the SiNx layer becomes thinner, whereas the interface layer between the SiNx layer and Si becomes thicker. It is concluded by STEM-EELS and XPS that this interface layer is SiON layer. The density of N–H and Si–H bonding within the stacked structure strongly depends on the PDA temperature. Our study helps elucidate the properties of SiNx films in stacked structures from various perspectives. 相似文献