LiNH2储氢材料中间隙H与掺杂原子交互作用对其释氢性能影响机理研究

采用基于密度泛函理论的赝势平面波第一性原理方法,研究了LiNH₂缺陷及其掺杂原子交互作用对其释氢影响.通过对其进行优化求得它们的局域最稳定结构并计算了含间隙H原子缺陷的LiNH₂及其掺杂合金的结合能、间隙缺陷形成能、态密度和电荷布居.结果表明: 系统结合能不能反映LiNH₂及其掺杂合金的释氢性质;平衡时,LiNH₂中有一定的间隙氢原子存在,Mg,Ti掺杂使形成能大大降低,大大增大了间隙氢的浓度. 间隙H原子在带隙引入了缺陷能级使带隙大大减小,提高释氢能力.间隙H原子导致[NH₂]^-中N-H原子间相互作用减弱,容易释氢.间隙H与[NH₂]^-中N存在共价作用,可以解释LiNH₂释氢反应中NH₃的放出.当存在掺杂时,N-H键的键强不均衡,部分较弱,部分较强,较弱的N-H键中H容易放出. 关键词： 储氢材料 第一性原理 缺陷 释氢机理     

Theoretical study of the structural, elastic, electronic and thermal properties of the MAX phase Nb2SiC

Structural, elastic, electronic and thermal properties of the MAX phase Nb₂SiC are studied by means of a pseudo-potential plane-wave method based on the density functional theory. The optimized zero pressure geometrical parameters are in good agreement with the available theoretical data. The effect of high pressure, up to 40 GPa, on the lattice constants shows that the contractions along the c-axis were higher than those along the a-axis. The elastic constants C_ij and elastic wave velocities are calculated for monocrystal Nb₂SiC. Numerical estimations of the bulk modulus, shear modulus, Young’s modulus, Poisson’s ratio, average sound velocity and Debye temperature for ideal polycrystalline Nb₂SiC aggregates are performed in the framework of the Voigt-Reuss-Hill approximation. The band structure shows that Nb₂SiC is an electrical conductor. The analysis of the atomic site projected densities and the charge density distribution shows that the bonding is of covalent-ionic nature with the presence of metallic character. The density of states at Fermi level is dictated by the niobium d states; Si element has a little effect. Thermal effects on some macroscopic properties of Nb₂SiC are predicted using the quasi-harmonic Debye model, in which the lattice vibrations are taken into account. The variations of the primitive cell volume, volume expansion coefficient, bulk modulus, heat capacity and Debye temperature with pressure and temperature in the ranges of 0-40 GPa and 0-2000 K are obtained successfully.     

无铅四方相钙钛矿短周期超晶格压电效应机理研究

超晶格压电行为与内部正离子之间的内在联系尚缺乏相关的研究.本文基于密度泛函理论的第一性原理方法,研究了三种无铅四方相钙钛矿铁电超晶格(BaTiO_3/SrTiO_3,KNbO_3/KTaO_3和BaTiO_3/KNbO_3)中A,B位正离子对整体的极化和压电贡献.通过计算超晶格不同轴向应变条件下原子结构和Born有效电荷,获得了超晶格和各个正离子的极化值和压电系数.结果表明,在轴向压缩应变条件下(-0.15—0 A),无铅超晶格中的正离子位移D(A)和D(B)受到抑制,在拉应变时位移才显著增大,因此极化和压电行为不明显.在轴向拉伸应变作用下(0—0.15 A),无铅超晶格中各原子的极化贡献显著增大,特别是B位原子Ti,Nb和Ta的极化贡献使得总的极化强度也显著提高,并当拉应变达到一定值,超晶格才会出现明显的压电行为.无铅超晶格的极化和压电行为主要由B位正离子贡献.     

太阳辐射计的衍射效应修正

太阳辐射测量是研究太阳活动与地球气候演变的重要方式之一,对人类社会的可持续发展具有重要意义。衍射效应作为测量过程中系统误差的主要来源之一,有必要进行精确的修正,从而提高测量数据的精度。首先,对衍射效应理论进行研究,从Kirchhoff衍射理论出发,在高斯光学近似下,逐步确定点与点,点与面,面与面之间的能量传输关系,推导出了衍射效应的一般公式;接着,根据衍射效应的渐近性质,得到了一种简化的计算方法;然后,用简化的方法计算太阳辐照绝对辐射计(SIAR)的衍射效应以及衍射修正因子,最后,根据衍射修正结果,计算相对于世界辐射基准(WRR)的定标系数。结果显示:SIAR的衍射效应以及衍射修正因子分别约为1.002 742和0.997 265。经过衍射修正后,SIAR对WRR的定标系数更接近于1,表明衍射修正降低了系统误差,提高了辐射测量的准确度。     

胸腺嘧啶低能量VUV光解离路径的实验和理论研究

利用同步辐射真空紫外光电离质谱和理论计算研究了胸腺嘧啶的光解离反应路径, 通过改变光子能量得到不同的质谱信号, 光子能量在12.0 eV时主要的碎片有m/z=98 (C₄H₆N₂₄O⁺)、97 (C₄H₅N₂O⁺)、84 (C₃H₄N₂O⁺或C<     

双势垒磁性隧道结中量子阱共振隧穿效应的第一性原理理论

磁性隧道结材料中自旋相关的量子阱态所导致的共振隧穿现象具有很重要的研究和应用价值，文章介绍了最近在Fe（001）／MgO／Fe／MgO／Fe双势垒磁性隧道结中存在的量子阱共振隧穿效应的理论研究工作，通过量子阱态的第一性原理的计算以及结合对中间Fe薄膜孤岛结构所导致Coulomb阻塞效应的分析，证实了最近Nozaki等人（Nozaki T et al．Phys．Rev．Lett．，2006，96：027208）实验中得到的振荡效应确实来源于中间Fe层多数自旋电子在Г点处形成的△1对称性的量子阱态．Coulomb阻塞效应的存在正是导致实验中低温下量子阱共振隧穿效应不够明显的主要原因．     

活细胞内单个大分子的行为

以往细胞内大分子活动的研究,多数是许多分子活动的一个平均结果,即一种集群平均（ensemble averaging）的结果,随着各种技术,特别是光学及荧光检测技术的成熟,实时视见活细胞内单个大分子的时代已经到来.在现时条件下,有许多方法可供选择,如荧光共振能量转移、原子力显微镜、全内反射显微技术、荧光相关光谱法等等.“活细胞内单个大分子的行为”的研究有可能为了解活细胞内单个分子的活动带来完全新的认识,但目前还存在不少方法学上的局限性,有待进一步提高,如有效的特异标记物、细胞深部荧光的检测、新型显微镜的开发等.     

Electronic structures,magnetic properties and band alignments of 3d transition metal atoms doped monolayer MoS2

Utilizing first-principles calculations, the electronic structures, magnetic properties and band alignments of monolayer MoS₂ doped by 3d transition metal atoms have been investigated. It is found that in V, Cr, Mn, Fe-doped monolayers, the nearest neighboring S atoms (S_NN) are antiferromagnetically polarized with the doped atoms. While in Co, Ni, Cu, Zn-doped systems, the S_NN are ferromagnetically coupled with the doped atoms. Moreover, the nearest neighboring Mo atoms also demonstrate spin polarization. Compared with pristine monolayer MoS₂, little change is found for the band edges' positions in the doped systems. The Fermi level is located in the spin-polarized impurity bands, implying a half-metallic state. These results provide fundamental insights for doped monolayer MoS₂ applying in spintronic, optoelectronic and electronic devices.     

熔石英亚表面杂质颗粒附近光场调制的三维模拟

熔石英亚表面缺陷是光学材料低损伤阈值的主要因素之一.本文建立了熔石英亚表面三维球形杂质颗粒模型,采用三维时域有限差分方法对杂质附近的光场进行了数值模拟,分析了杂质的介电常数与尺寸对光强增强因子的影响,结果显示:介电常数小于熔石英的杂质,其光强增强因子不随尺寸、介电常数的改变而改变,均保持为4左右;当介电常数为6.0时,半径为1.5λ,2λ及2.5λ的杂质,相应的光强增强因子分别为50.1588,73.3904及102.9953,即增强因子随杂质尺寸的增大而增大;恰 关键词： 杂质颗粒 三维时域有限差分 数值计算 光强增强因子     

The separation of out-of-plane displacement from in-plane components by fringe carrier method based on large image-shearing ESPI

A fringe carrier method for separating out-of-plane displacement from in-plane components based on large image-shearing electronic speckle pattern interferometry (ESPI) is presented. If the test object is respectively illuminated by two expanded symmetric illuminations in large image-shearing ESPI, two interferometers are formed. Carrier fringe patterns can be introduced by tilting reference surface a small angle. The carrier fringe patterns are demodulated after deformation of the object. Two phase maps, which include out-of-plane and in-plane displacement, can be obtained by using Fourier transform. Then out-of-plane displacement can be easily separated from in-plane displacement by simple operation between two unwrapped phase distributions. The principle of spatial carrier frequency modulation in large image-shearing ESPI is discussed. A typical three-point-bending experiment is completed. Experimental results are offered. The results show that the method offers high visibility of carrier fringes. And the system presented does not need a special beam as a reference light and has simple optical setup.