Structure and mechanical properties of Al/AlN multilayer with different AlN layer thickness

Nanometer scale Al/AlN multilayers have been prepared by dc magnetron sputtering technique with a columnar target. A set of Al/AlN multilayers with the Al layer thickness of 2.9 nm and the AlN layer thickness variation from 1.13 to 6.81 nm were determined. Low angle X-ray diffraction (LAXRD) was used to analyze the layered structure of multilayers. The phase structure of the coatings was investigated with grazing angle XRD (GAXRD). Mechanical properties of these multilayers were thoroughly studied using a nanoindentation and ball-on-disk micro-tribometer. It was found that the multilayer hardness and reduced modulus showed no strong dependence on the AlN layer thickness. Al2.9 nm/AlN1.13 nm multilayer had more excellent tribological properties than single layers and other proportion multilayers with a lowest friction coefficient of 0.15. And the tribological properties of all the multilayers are superior to the AlN single layer.     

p型未掺杂富锌ZnO薄膜的形成和性能研究

以高纯ZnO为靶材,氩气为溅射气体,利用射频磁控溅射技术在石英衬底上生长出纤锌矿结构的富锌ZnO薄膜.薄膜沿(002)择优取向生长,厚约为1.2μm,呈现电绝缘特性.将溅射的ZnO薄膜在10-3Pa,510~1 000 K的温度范围等温退火1 h,室温Hall测量结果表明ZnO薄膜的导电性能经历了由绝缘—n型—p型—n型半导体的变化.XPS测试表明ZnO薄膜的Zn/O离子比随退火温度的升高而降低,但一直是富锌ZnO,说明未掺杂的富锌ZnO也可以形成p型导电.p型未掺杂富锌ZnO薄膜的形成可归因于VZn受主浓度可以克服VO和Zni本征施主的补偿效应.     

磁控溅射ZnO薄膜的成核机制及表面形貌演化动力学研究

利用原子力显微镜分析了ZnO薄膜在具有本征氧化层的Si(100)和Si(111)基片上的表面形貌 随沉积时间的演化. 通过对薄膜生长形貌的动力学标度表征，研究了射频反应磁控溅射条件 下，ZnO薄膜的成核过程及生长动力学行为. 研究发现，ZnO在基片表面的成核过程可分为初 期成核阶段、低速率成核阶段和二次成核阶段. 对于Si(100)基片，三个成核阶段的生长指 数分别为β₁=1.04，β₂=0.25±0.01，β₃=0.74；对 于Si(11 关键词： ZnO薄膜 磁控溅射 生长动力学 成核机制     

万用表检测电容器方法分析及改进

本文从教学实验的实践出发,对使用万用表测量电容器容量的方法进行了分析,并对电路进行了一定改进。     

Comparative Study on Large and Small Signal Theory for Intensity Modulation Response of Semiconductor Lasers Including Higher-Order Dispersion Terms

In this article, the comparison of large signal theory and small signal theory has been done with dispersive propagation of optical signal with IMDD (Intensity Modulation Direct Detection) systems for semiconductor lasers with higher-order dispersion terms. The expressions for an exact large signal theory and small signal theory including higher-order dispersion terms for propagation of an optical wave with sinusoidal amplitude and frequency modulation in a dispersive fiber have been derived. It is observed that small signal theory is more sensitive compared to large signal theory in terms of intensity modulation/direct detection systems. Also, it is reported that for large signal analysis the higher-order effects of dispersion can be ignored, whereas for small signal theory, the higher-order effects can be ignored for lower modulation frequencies only. The variation in the transfer function for various values of modulation indices are greater for small signal analysis than for large signal analysis. Also, as the intensity modulation index is increased, there is a decrease in the value of transfer function. The large signal model approximates the small signal model for lower values of the intensity modulation index.     

基于LiCo0.8M0.2O2 (M=Ni,Zr)薄膜的全固态薄膜锂电池

用射频磁控溅射结合传统退火的方法制备LiCo0.8M0.2O2 (M=Ni,Zr)阴极薄膜．X射线衍射、拉曼光谱、扫描电子显微镜等手段表征了不同掺杂的LiCo0.8M0.2O2薄膜．结果显示,700℃退火的LiCo0.8M0．2O2薄膜具有类似α-NaFeO2的层状结构．通过对不同掺杂锂钴氧阴极的全固态薄膜锂电池Li／LiPON／LiCo0.8M0.2O2的电化学性能研究表明,电化学活性元素Ni的掺杂使全固态电池具有更大的放电容量(56μAh／cm2μm),而非电化学活性元素Zr的掺杂使全固态电池具有更好的循环稳定性．     

退火温度对低温生长MgxZn1－xO薄膜光学性质的影响

用射频磁控溅射法在80℃衬底温度下制备出Mg_xZn_1-xO(x=0.16)薄膜，用X射线衍射(XRD)、光致发光(PL)和透射谱研究了退火温度对Mg_xZn_1-xO薄膜结构和光学性质的影响.测量结果显示，Mg_xZn_1-xO薄膜为单相六角纤锌矿结构，并且具有沿c轴的择优取向；随着退火温度的升高，(002)XRD峰强度、平均晶粒尺寸和紫外PL峰强度增大，(002)XRD峰半高宽(F 关键词： xZn_1-xO薄膜')" href="#">Mg_xZn_1-xO薄膜 射频磁控溅射 退火     

全固态高功率连续单横模Nd:YVO4/LBO绿光激光器

报道了激光二极管泵浦的高功率连续单横模绿光激光器。考虑到激光晶体因吸收泵浦光而产生的热透镜效应,我们选择低掺杂浓度Nd:YVO4激光晶体,设计了V字型热不灵敏折叠式驻波谐振腔,利用I类非临界相位匹配LBO非线性晶体,当泵浦功率为23 W时,得到7 W单横模532 nm绿光输出功率,光-光转化效率为33%,长期功率稳定性优于1.6%(自由运转3小时)。     

DESIGN OF A NOVEL 2-D UNIPLANAR CRLH-TL STRUCTURE

A novel uniplanar 2-D composite right/left-handed transmission line (CRLH-TL) structure is proposed based on a general transmission line theory and the way to increase the relative operating bandwidth in the left-handed (LH) region and lower the LH operating frequency is illustrated. In addition, a new method to extract parameters and calculate the Bloch impedance of the structure is presented. Numerical results of the dispersion as well as the extracted parameters are given, which are calculated based on full-wave simulation. The present 2-D uniplanar CRLH-TL structure is applicable to 2-D left-handed materials in lower and wider LH frequency range. Supported by the National Natural Science Foundation of China (No. 60371010) (No. 60471037) (No. 63531020)     

Fabrication and characterization of sputtered titanium dioxide films

TiO₂ thin films were prepared under various conditions by using a reactive RF sputtering technique. The structural, optical and electrical characteristics of the films have been investigated. All as-deposited films were amorphous. After annealing at T > 673 K, the crystallinity of the observed tetragonal anatase phase appeared improved. The optical band gap, determined by using Tauc plot, has been found to amount to 3.38 ± 0.03 and 3.21 ± 0.03 eV for the direct and indirect transition, respectively. Also the complex optical constants for the wavelength range 300-2500 nm are reported. Using the two-point probe technique, the dark resistivity has been measured as a function of the film thickness, d. The resistivity, ρ, of the samples has been found to decrease markedly with increasing thickness, but only for d < 100 nm. The behaviour of ρd versus d was found to fit properly with the Fuchs and Sondheimer relation with parameters ρ_o = 4.95 × 10⁶ Ω cm and mean free path, l = 310 ± 2 nm. The log ρ versus 1/T curves show three distinct regions with values for the activation energy of 0.03 ± 0.01, 0.17 ± 0.01 and 0.50 ± 0.02 eV, respectively.