电子束装置运行稳定性的测量

 为了验证电子束装置的稳定性,分别对电流波形、电压波形进行了多次测量,对二极管放电时注入腔中电子均匀性进行了探测,最后改变二极管真空度测量了泵浦氩的荧光 谱的稳定性。     

工业CT图像均匀性校正

在工业CT图像重建过程中,射束硬化使得图像出现“杯状”伪影,阵列探测器响应不一致使得图像出现环状伪影、带状伪影和点伪影,影响图像均匀性.本文分析了射束硬化的原理和探测器响应不一致的数学模型,并通过实验,对探测器响应进行多挡板定标得到校正系数表.利用查表插值的方法对投影数据进行均匀性校正,消除上述伪影.     

合肥光源二分割三角型光位置检测器的研制

介绍了一种用于合肥光源的二分割三角型光位置检测器的研制,对其主要性能(如灵敏度和线性范围)进行了理论分析和实际测量,测量结果与理论分析相当吻合.文中还给出了光位置测量系统的组成     

仿紧集上的拟—似变分不等式

借助于文（１）中的结论研究了仿紧集上的拟－似变分不等式，统一和发展了文（２－６）中的相应结果。     

关于拟AP内射模的一些研究

Let R be a ring. R is called right AP-injective if, for any a ∈ R, there exists a left ideal of R such that lr(a) = Ra (?) Xa. We extend this notion to modules. A right .R-module M with 5 = End(MR) is called quasi AP-injective if, for any s ∈ S, there exists a left ideal Xs of S such that ls(Ker(s)) = Ss (?) Xs. In this paper, we give some characterizations and properties of quasi AP-injective modules which generalize results of Page and Zhou.     

三级近似束流光学计算程序

为了精确计算束流在离子光学系统中的传输,用Visual FORTRAN 6.5语言编写了一个计算程序,长约13000行. 此程序可以计算由三圆筒单透镜、三膜片单透镜、双元筒透镜、均匀场静电加速管、磁四极透镜、六极磁铁、静电四极透镜、偏转磁铁、螺线管透镜、ExB~正交电磁场分析器、静电偏转器、漂浮管、QWR(Quarter Wave Resonators)和SLR(Split Loop Resonators)射频加速元件等元件任意组成的离子光学系统. 粒子轨迹的计算可精确到三级近似. 粒子的分布类型也可以有多种选择. 程序具有最优化计算功能,即可以自动调整元件的参数,以实现所需要的光学条件. 各元件之后的横向和纵向相图以及系统的束流包络线以图形方式显示在屏幕上.     

直线加速器驻波腔中的瞬态束流负载效应

在高能加速器中, 随着单个束团和束团串中电荷量的提高, 当粒子束穿过加速腔的时候, 感应出的瞬态束流负载电压也越来越高. 但是, 在通常分析束流负载的时候, 往往对稳态束流负载研究的比较多, 而对瞬态束流负载的研究要相对少一些. 本文首先对束流负载的瞬态特性和束团穿过加速腔时高频源所看到谐振腔谐振频率的变化方式进行了分析, 然后又对两种情况下谐振腔的最优失谐条件进行了讨论, 并给出了相应的解析公式. 在第1种情况下, 当粒子束穿过加速腔的时候, 谐振腔的自然谐振频率能够及时地得到调节, 从而使高频源的电流与谐振腔的腔压同相, 以提高高频源的效率; 在第2种情况下, 当粒子束穿过加速腔的时候, 谐振腔的自然谐振频率保持不变, 不能被调节. 最后, 还对BEPCⅡ现有预注入器的预聚束腔、BEPCⅡ未来预注入器的两个次谐波聚束腔中的瞬态束流负载效应进行了分析.     

Beam Combination using Stimulated Brillouin Scattering for the Ultimate High Power-Energy Laser System Operating at High Repetition Rate over 10 Hz for Laser Fusion Driver

After the laser was invented in 1960, a phase conjugation mirror has been respected to be the most fantastic one for the laser resonator composition because it can compensate any distortions of the laser beams occurred by the many inhomogenuities of the laser media and optical components. Among the many phase conjugation configurations, the stimulated Brillouin scattering phase conjugation mirror is the most simple one and many researchers have tried to utilize it to develop high power/energy laser systems. For realizing a high energy/power laser system the thermal problem is the most difficult to solve, and some researchers suggested a beam combination technique to reduce the thermal load of the big laser media to many small sized ones. To accomplish the beam combination using stimulated Brillouin scattering phase conjugation mirrors (SBS-PCMs), it is necessary to lock/control the phases of the SBS-PCMs. And some researchers have developed several ways for it, but they can lock the phases of a limited number of beams overlapped at the foci less than 5, or lock the phases by back-seeding technique but it loses the phase conjugation characteristics. For realization of the laser fusion driver, it is necessary to combine more than 10 or 100 beams. And the authors have developed recently a new phase controlling/locking technique which is isolated and independent totally from other beams and it can be applied to an unlimited number of beams in principle.     

Smaller Output Beam Divergence in the Slowly Opened Q-Switch Operation

The mechanism of the slowly opened Q-switch operation was investigated thoroughly. Maximum energy extraction from the resonator could be optimized, and the smallest output beam divergence could be achieved. In this article, we present a detailed analysis that has numerically verified the mode-selection mechanism in the slowly opened Q-switch operation, and the degree of the smaller output laser beam divergence that has been achieved. The mechanism of the slowly opened Q-switch operation is the inherent advantage of the passive saturable absorber in this operation. We can use the maximum energy extraction and the smallest output beam divergence results of the slowly opened Q-switch operation to design and optimize various passive saturable absorbers: plastic dye sheets, LiF:F₂⁻ color center crystals, Cr4⁺: YAG crystals, RG1000 color glass filters, and the single crystal semiconductor saturable absorber wafers that are in developed in our microchip laser systems.     

Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.