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101.
We study GaN/AlN Quantum Dot (QD) superlattices utilizing the STREL environment which allows the building of atomistic models, relaxation of the structures, the calculation of the electronic states and optical transitions and the visualization of the results. The forces are calculated using an appropriate Keating or Stillinger–Weber interatomic potential model and the electronic states and optical transitions using a tight-binding formulation which is economical and produces realistic electronic properties. The relaxed structure has strains mainly in the GaN region which are compressive and small tensile strains in the AlN region, mainly below the QD. In the calculation of the electronic states and of the optical transitions the strains are included realistically at the atomistic level. The study of the wavefunctions close to the fundamental gap show how these strains influence the form and spatial extent of the wavefunction. Very close to the fundamental gap the valence and some conduction states are confined in the QD and have considerable oscillator strength. 相似文献
102.
R. Lü H. Pan J.-L. Zhu B.-L. Gu 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,26(4):479-491
The tunneling of a giant spin at excited levels is studied theoretically in mesoscopic magnets with a magnetic field at an
arbitrary angle in the easy plane. Different structures of the tunneling barriers can be generated by the magnetocrystalline
anisotropy, the magnitude and the orientation of the field. By calculating the nonvacuum instanton solution explicitly, we
obtain the tunnel splittings and the tunneling rates for different angle ranges of the external magnetic field ( θ
H = π/2 and π/2 < θ
H < π). The temperature dependences of the decay rates are clearly shown for each case. It is found that the tunneling rate
and the crossover temperature depend on the orientation of the external magnetic field. This feature can be tested with the
use of existing experimental techniques.
Received 12 March 2001 and Received in final form 18 October 2001 相似文献
103.
Jerzy Król 《Foundations of Physics》2006,36(7):1070-1098
We analyse the proposition that the spacetime structure is modified at short distances or at high energies due to weakening of classical logic. The logic assigned to the regions of spacetime is intuitionistic logic of some topoi. Several cases of special topoi are considered. The quantum mechanical effects can be generated by such semi-classical spacetimes. The issues of: background independence and general relativity covariance, field theoretic renormalization of divergent expressions, the existence and definition of path integral measures, are briefly discussed in the proposal. The connection with some problems in foundations of mathematics and differential topology are also discussed. 相似文献
104.
This paper presents the simulation of surface acoustic wave (SAW)-induced absorption coefficient and refractive index change in InGaAs-GaAs multiple quantum well (MQW) structures operating near 980 nm. The exciton problem is solved in two dimensional momentum space to include the non-axial effect due to strain induced valance band mixing and nonparabolicity. The optical absorption coefficient and refractive index changes near the band gap in the MQWs are calculated as a function of SAW power. 相似文献
105.
106.
107.
We further study the validity of the Monte Carlo Hamiltonian method. The advantage of the method,in comparison with the standard Monte Carlo Lagrangian approach, is its capability to study the excited states. Weconsider two quantum mechanical models: a symmetric one V(x) = |x|/2; and an asymmetric one V(x) = ∞, forx < 0 and V(x) = x, for x ≥ 0. The results for the spectrum, wave functions and thermodynamical observables are inagreement with the analytical or Runge-Kutta calculations. 相似文献
108.
结合声表面波和光致发光谱在低温(15K)下对非故意掺杂的GaAs(110)量子阱结构的发光特性进行了研究.实验结果表明,由于声表面波的作用GaAs(110)量子阱的发光强度减弱,并且其对应的重空穴能级出现了分裂的现象,当施加的声波强度Prf达到20dBm时,能级分裂ΔE达到了10meV.进一步讨论了声表面波对GaAs(110)量子阱圆偏振光自旋注入的影响.
关键词:
发光
GaAs量子阱
声表面波
自旋极化 相似文献
109.
Feng S.-W. Tsai C.-Y. Cheng Y.-C. Liao C.-C. Yang C.C. Lin Y.-S. Ma K.-J. Chyi J.-I. 《Optical and Quantum Electronics》2002,34(12):1213-1219
A side-bump feature in a photoluminescence (PL) spectrum of an InGaN compound was widely observed. With reasonable fitting to PL spectra with three Gaussian distributions, the temperature variations of the peak positions, integrated PL intensities, and peak widths of the main and first side peaks of three InGaN/GaN multiple quantum well samples with different nominal indium contents are shown and interpreted. The existence of the side peaks is attributed to phonon–replica transitions. The variations of the peak position separations and the decreasing trends of the first side peak widths beyond certain temperatures in those samples were explained with the requirement of phonon momentum condition for phonon–replica transitions. In the sample with 25% nominal indium content, the phonon–replica transition could become stronger than the direct transition of localized states. 相似文献
110.
Kamil Walczak 《Central European Journal of Physics》2006,4(1):8-19
The rate-equation approach is used to describe sequential tunneling through a molecular junction in the Coulomb blockade regime.
Such device is composed of molecular quantum dot (with discrete energy levels) coupled with two metallic electrodes via potential
barriers. Based on this model, we calculate nonlinear transport characteristics (conductance-voltage and current-voltage dependences)
and compare them with the results obtained within a self-consistent field approach. It is shown that the shape of transport
characteristics is determined by the combined effect of the electronic structure of molecular quantum dots and by the Coulomb
blockade. In particular, the following phenomena are discussed in detail: the suppression of the current at higher voltages,
the charging-induced rectification effect, the charging-generated changes of conductance gap and the temperature-induced as
well as broadening-generated smoothing of current steps. 相似文献