折射率色散效应对晶体硅太阳电池反射率的影响

为了分析色散效应对晶体硅太阳电池反射率的影响,在考虑材料折射率色散效应的情况下,运用光学干涉矩阵计算了具有SiO2单层减反射膜和MgF2/ZnS双层减反射膜晶体硅太阳电池的反射率与波长的函数关系,并与实验结果和未考虑色散效应的计算结果进行了对比分析.结果表明：考虑折射率色散效应的计算结果与实验测量数据完全相符,而未考虑折射率色散效应的计算结果与实验测量数据相差较大,最大差值分别为21.5％和16.9％.     

混浊介质中线偏振光和圆偏振光的后向漫散射特征

以标准的组织模型Intralipid脂肪乳溶液为研究对象,采用CCD偏振成像系统,通过测量该混浊介质的后向漫散射光的斯托克斯矢量,深入研究了不同方位的线偏振光及不同旋向的圆偏振光入射时,后向漫散射光的特征.研究结果表明：对不同的入射偏振态,后向漫散射强度、偏振度的空间分布具有方位选择性,强度和偏振度的大小随距离入射点的距离增加而减小;介质浓度增加,后向散射强度增加,偏振度减小,且同一浓度下,圆偏振光的偏振度总是高于线偏振光.     

介质层厚对含负折射率介质Bragg微腔的影响

研究了介质层厚对含负折射率介质一维光子晶体Bragg微腔的缺陷模和双稳态的影响.在中心频率附近将传输矩阵各矩阵元采用泰勒级数展开并取一级近似,得到了缺陷模频率与介质层厚的关系式及品质因子公式.研究结果表明：一级近似法能很好地解释中心频率附近介质层厚对缺陷模频率的影响.理想Bragg微腔结构的缺陷模品质因子最大;递增正折射率介质层厚和增大缺陷层介质层厚、递减负折射率介质层厚及同时等量递减正和负折射率介质层厚,均可使缺陷模红移,双稳态阈值降低.     

大范围光纤Bragg光栅压力传感器增敏实验研究

鉴于钛合金材料具有低弹性模量、受温度影响小等特性,设计制作了一种以钛合金管作为光纤Bragg光栅应变增敏衬底元件的高压压力传感器件.通过与电阻应变计实时监控的对比,从实验上研究了光纤Bragg光栅的中心波长偏移对调谐压强的响应.结果表明:这种增敏设计,具有良好的线性响应和可重复性,且与理论推导结果吻合较好.增敏后对压力的响应灵敏度可达0.034 nm/MPa,测压量程可达0~40 MPa,甚至更宽.     

New Blood Coagulation Factor XIIa Inhibitors: Molecular Modeling,Synthesis, and Experimental Confirmation

In the modern world, complications caused by disorders in the blood coagulation system are found in almost all areas of medicine. Thus, the development of new, more advanced drugs that can prevent pathological conditions without disrupting normal hemostasis is an urgent task. The blood coagulation factor XIIa is one of the most promising therapeutic targets for the development of anticoagulants based on its inhibitors. The initial stage of drug development is directly related to computational methods of searching for a lead compound. In this study, docking followed by quantum chemical calculations was used to search for noncovalent low-molecular-weight factor XIIa inhibitors in a focused library of druglike compounds. As a result of the study, four low-molecular-weight compounds were experimentally confirmed as factor XIIa inhibitors. Selectivity testing revealed that two of the identified factor XIIa inhibitors were selective over the coagulation factors Xa and XIa.     

The Bifurcated σ-Hole···σ-Hole Stacking Interactions

The bifurcated σ-hole···σ-hole stacking interactions between organosulfur molecules, which are key components of organic optical and electronic materials, were investigated by using a combined method of the Cambridge Structural Database search and quantum chemical calculation. Due to the geometric constraints, the binding energy of one bifurcated σ-hole···σ-hole stacking interaction is in general smaller than the sum of the binding energies of two free monofurcated σ-hole···σ-hole stacking interactions. The bifurcated σ-hole···σ-hole stacking interactions are still of the dispersion-dominated noncovalent interactions. However, in contrast to the linear monofurcated σ-hole···σ-hole stacking interaction, the contribution of the electrostatic energy to the total attractive interaction energy increases significantly and the dispersion component of the total attractive interaction energy decreases significantly for the bifurcated σ-hole···σ-hole stacking interaction. Another important finding of this study is that the low-cost spin-component scaled zeroth-order symmetry-adapted perturbation theory performs perfectly in the study of the bifurcated σ-hole···σ-hole stacking interactions. This work will provide valuable information for the design and synthesis of novel organic optical and electronic materials.     

Schemes for Single Electron Transistor Based on Double Quantum Dot Islands Utilizing a Graphene Nanoscroll,Carbon Nanotube and Fullerene

The single electron transistor (SET) is a nanoscale switching device with a simple equivalent circuit. It can work very fast as it is based on the tunneling of single electrons. Its nanostructure contains a quantum dot island whose material impacts on the device operation. Carbon allotropes such as fullerene (C₆₀), carbon nanotubes (CNTs) and graphene nanoscrolls (GNSs) can be utilized as the quantum dot island in SETs. In this study, multiple quantum dot islands such as GNS-CNT and GNS-C₆₀ are utilized in SET devices. The currents of two counterpart devices are modeled and analyzed. The impacts of important parameters such as temperature and applied gate voltage on the current of two SETs are investigated using proposed mathematical models. Moreover, the impacts of CNT length, fullerene diameter, GNS length, and GNS spiral length and number of turns on the SET’s current are explored. Additionally, the Coulomb blockade ranges (CB) of the two SETs are compared. The results reveal that the GNS-CNT SET has a lower Coulomb blockade range and a higher current than the GNS-C₆₀ SET. Their charge stability diagrams indicate that the GNS-CNT SET has smaller Coulomb diamond areas, zero-current regions, and zero-conductance regions than the GNS-C₆₀ SET.     

新型高准确度光纤光栅压力传感系统

提出一种使用光纤双布喇格光栅测定压力的测量方法.在外界压力作用下,传感光纤布喇格光栅反射波长的漂移,被转变成在交变力策动下,发生弯曲的等强度悬臂梁调制扫描光栅反射光脉冲间隔的变化.实验结果表明,光纤布喇格光栅反射波长漂移的测量范围为0～3 nm,波长测量的不确定度为1 pm;压力传感器的量程为0～6 MPa时,压力的测量不确定度为0.005 Mpa.     

Faraday镜预转角对FMOCT输出光偏振态的影响

通过计算机仿真,运用琼斯矩阵理论分析了Faraday镜预转角对法拉第镜式光学电流互感器输出光偏振态的影响.实验测量了Faraday镜实际预转角的大小,测量了外磁场的改变对Faraday镜预转角的影响.外磁场的存在和变化使Faraday镜预转角偏离初始值,并使系统输出光由理想状态下的线偏振光退化成椭圆偏振光,并引起法拉第镜式光学电流互感器工作灵敏度和稳定性的下降.提出了用电磁屏蔽解决外界磁场影响的方法.     

自聚焦透镜高效批量加工的双面研磨抛光法研究

依据双面研磨抛光原理,提出了加工自聚焦透镜平面和斜面辅助工装设计.从工艺技术特点和生产实际过程等方面对设计的工装使用情况进行分析验证.多次大批量加工实践证明,该辅助工装的设计完全满足了自聚焦透镜高效批量加工技术要求,简化整个生产线工艺,减少工艺流程时间,降低材辅料的消耗成本,从而验证了双面研磨抛光法是一种实用的加工自聚焦透镜的新方法.