Anharmonic effect of adiabatic quantum pumping

Based on the scattering matrix approach.we systematically investigate the anharmonic effect of the pumped current in double-barrier strructures with adiabatic time-modulation of two sinusoidal AC driven potential heights. The pumped currem as a functionof the pha.se difference bet ween the two driven potentials looks like to be sinusoidal, but actually it contains sine functions of double and more phase difference, it is found that this kind of anharmonic effect of the pumped current is determined combinedly by the Berry curvature and parameter va.riation loop trajectory. Therefore small ratio of the driving amplitude and the static amplitude is not necessary for harmonic pattern in the pmnped era＇rent, to dominate for smooth Berry curvatureon the surface within the parameter variation loop.     

Transfer printing of fully formed thin‐film microscale GaAs lasers on silicon with a thermally conductive interface material

High performance semiconductor lasers on silicon are critical elements of next generation photonic integrated circuits. Transfer printing methods provide promising paths to achieve hybrid integration of III‐V devices on Si platforms. This paper presents materials and procedures for epitaxially releasing thin‐film microscale GaAs based lasers after their full fabrication on GaAs native substrates, and for subsequently transfer printing arrays of them onto Si wafers. An indium‐silver based alloy serves as a thermally conductive bonding interface between the lasers and the Si, for enhanced performance. Numerical calculations provide comparative insights into thermal properties for devices with metallic, organic and semiconductor interfaces. Under current injection, the first of these three interfaces provides, by far, the lowest operating temperatures. Such devices exhibit continuous‐wave lasing in the near‐infrared range under electrical pumping, with performance comparable to unreleased devices on their native substrates.

     

Control of the probe absorption via incoherent pumping fields in asymmetric semiconductor quantum wells

In a three-level asymmetric semiconductor quantum well system, owing to the effects that result from the incoherent pumping fields, the probe absorption of probe field can be effectively controlled. The result is achieved by applying the two incoherent pumping fields, so it is different from the conventional way in ordinary laser-driven schemes that coherent driving fields are necessary to control the probe absorption. Otherwise, our study is much more practical than its atomic counterpart due to its flexible design and the controllable interference strength. Thus, it may provide some new possibilities for technological applications in optoelectronics and solid-state quantum information science.     

Diode pumped 850 nm vertical-cavity surface-emitting laser

Very little, if any, has been published on optically pumped 850 nm vertical-cavity surface-emitting lasers (VCSELs), particularly for doped structures. This paper investigates GaAs-based VCSELs which have not been optimized for optical pumping work. Characterisation was carried out for both pulsed and continuous wave (CW). Pulsed operation causes a lower rise in temperature, thus postponing the onset of thermal rollover, and allowing the device to be operated at higher powers. A threshold of ∼160 kW/cm², and single mode output with incident power density of up to 225 kW/cm² were obtained. From the simulation work done, it has been observed that for optically pumped VCSELs, at higher pump density, there was faster turn on and higher output power, and that dilute nitride active material give better output performance compared to GaAs.     

Compact 7.8-W 1-GHz-repetition-rate passively mode-locked TEM00 Nd:YVO4 laser under 880 nm diode direct-in-band pumping

We demonstrate a compact high-power passively mode-locked TEM₀₀ Nd:YVO₄ laser with 1 GHz repetition rate by 880 nm diode direct-in-band pumping. At the absorbed pump power of 19.9 W, a stable mode-locked output power of 7.8 W was obtained with the pulse width of 21.4 ps and a beam quality factor of M² < 1.5, corresponding to an optical-optical conversion efficiency of 39.2%.     

A Microchip Tunable Blue Laser Source Based upon Cr∶LiSAF in Contact with KN Crystal

In this paper, a microchip laser consisted of 2.2% doped Cr∶LiSAF crystal and NCPM KN(KNbO3) crystal and pumped by a 679 nm laser diode is reported. The maximal output of TEM00 4.76 mW of blue laser at 431.7 nm is obtained with the absorption power of 304.6 mW. The laser shows a threshold of 76.2 mW and slope efficiency of 2.08%. Continuous-wave tunable output is demonstrated in the blue region of 423.4～445.5 nm through only changing temperature of KN crystal controlled by PID controller.     

Quasi-CW Diode Laser End-pumped Yb~(3 ): Glass Microchip Laser

Quasi-CW diode-pumped Yb3 : borate glass and Yb3 : phosphate glass microchip lasers have been reported. From Yb3 : phosphate glass laser, the maximum average output power was 31 mW and the optical-optical conversion efficiency was 5% . The maximum average output power was 18 mW, and optical-optical conversion efficiency was 3% for Yb3 :borate glass laser.     

Experimental determination of effective stimulated emission cross-section in a diode pumped Nd:YVO4 micro-laser at 1064 nm with various doping concentrations

A practical method is described and used for determination of the effective stimulated emission cross-section (σ_e) in an operating diode pumped Nd:YVO₄ micro-laser at 1064 nm with various doping concentrations. In this method a micro-laser is formed by keeping a small piece of the sample in a plane–plane resonator under semi-monolithic configuration and a fiber coupled diode laser (808 nm) was used for pumping. The pump power induced thermal lensing effect was used to make the cavity stable. In thermally stabilized solid-state lasers the cavity parameters change dynamically with the pump power and hence the overlap integrals become a function of the absorbed pump power. In our method the overlap integrals were estimated by measuring the thermal lens focal length at the threshold. The value of σ_e of Nd:YVO₄ crystal with different doping concentrations obtained by this method were in well agreement with the reported values.     

过冷沸腾中的局域气泡和射流的动态行为

本文以10 mm直径加热钢管为研究对象,通过大量可视化的实验研究,对核态过冷沸腾中的气泡动力学行为以及射流现象进行了描述和分析。在实验中我们观察到泡顶射流和核态射流的竞争,双射流,“液洞”现象等一些特殊的沸腾现象。射流的泵吸作用、汽泡表面相变换热、Marangoni效应等是导致射流和气泡结构演化的根本原因。     

Adiabatic population transfer in multistate chains via dressed intermediate states

The well-known process of stimulated Raman adiabatic passage (STIRAP) provides a robust technique for achieving complete population transfer between the first and last state of a three-state chain, with little population, even transiently, in the intermediate state. The extension of STIRAP to general N-state chainwise-linked systems continues to generate interest. Recently Malinovsky and Tannor (Phys. Rev. A 56, 4929 (1997)) have shown with numerical simulation that a resonant pulse sequence, which they term “straddle STIRAP”, can produce (under appropriate conditions, including specific pulse areas) complete population transfer with very little population in intermediate states. Their proposal supplements a pair of counterintuitively ordered delayed laser pulses, driving the first and last transition of the chain and corresponding to the pump and Stokes pulses in STIRAP, with one or more additional strong pulses of longer duration which couple the intermediate transition(s) and overlap both the pump and the Stokes pulses. In this paper, we modify the “straddling” Malinovsky-Tannor pulse sequence so that the intermediate couplings are constant (and strong), at least during the times when the pump and Stokes pulses are present, and the intermediate states therefore act as a strongly coupled subsystem with constant eigenvalues. Under this condition, we show that the original N-state chain is mathematically equivalent to a system comprising N-2 parallel -transitions, in which the initial state is coupled simultaneously to N-2 dressed intermediate states, which in turn are coupled to the final state. The population transfer is optimized by suitably tuning the pump and Stokes frequencies to resonance with one of these dressed intermediate states, which effectively acts as the single intermediate state in a three-state STIRAP-like process. We show that tuning to a dressed intermediate state turns the system (for both odd N and even N) into a three-state system - with all of the properties of conventional STIRAP (complete population transfer, little transient population in the intermediate states, insensitivity to variations in the laser parameters, such as pulse area). The success of the tuning-to-dressed-state idea is explained by using simple analytic approaches and illustrated with numerical simulations for four-, five-, six- and seven-state systems. Received: 17 April 1998 / Accepted: 15 June 1998