磁控溅射制备ZnO薄膜的受激发射特性的研究

用射频磁控反应溅射法在二氧化硅衬底上制备ZnO薄膜。得到了在不同温度下ZnO薄膜的吸收与光致发光。观测到了纵光学波 (LO)声子吸收峰与自由激子吸收峰 ;室温 (30 0K)下 ,PL谱中仅有自由激子发光峰。这些结果证实了ZnO薄膜具有较高的质量。探讨了变温ZnO薄膜的发光特性。研究了ZnO薄膜的受激发射特性。     

Effect of nonstoichiometry on Raman scattering of VO2 films

We report on Raman scattering of VO2 films prepared by radio frequency magnetron sputtering under different conditions. Our investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO2 films, compared with the stoichiometry VO2 films. The experimental evidence is presented and the cause for nonstoichiometry dependence of Raman spectra of VO2 films is discussed.     

FeCoB-SiO2磁性纳米颗粒膜的微波电磁特性

采用交替沉积磁控溅射工艺制备了超薄多层的FeCoB SiO2 磁性纳米颗粒膜 .利用x射线衍射仪、扫描探针显微镜、透射电子显微镜分析了薄膜的微结构和形貌特征 .采用振动样品磁强计、四探针法、微波矢量分析仪及谐振腔法测量薄膜试样的磁电性能和微波复磁导率 .重点对SiO2 介质相含量、薄膜微结构对电磁性能产生重要影响的机理做了分析和探讨 .结果表明 :这类FeCoB SiO2 磁性纳米颗粒膜具有良好的软磁性能和高频电磁性能 ,2GHz时的磁导率 μ′高于 70 ,可以应用于高频微磁器件或微波吸收材料的设计     

退火对TiO2薄膜形貌、结构及光学特性影响

利用射频磁控溅射技术在熔融石英基片上制备TiO<,2>薄膜,采用X射线衍射、扫描电子显微镜(SEM)、拉曼光谱以及透过谱研究了退火温度和退火气氛对TiO<,2>薄膜的结构、形貌和光学特性的影响.实验结果表明:在大气环境下退火,退火温度越.高,薄膜晶化越好,晶粒明显长大,温度高于700℃退火的薄膜,金红石相已明显形成.实验还发现,退火气氛对金红石相的形成是非常重要的,拉曼光谱反应出Ar气氛退火,抑制了金红石晶相的发育,薄膜仍以锐钛矿相为主.Ar气氛退火的薄膜在可见光范围内的透过率比大气退火的要低,并且由透过率曲线推知:金红石的光学带隙约为2.8 eV,比锐钛矿的光学带隙小0.2 eV.     

火焰曲率对H_2扩散火焰NO排放影响的数值研究

使用不同的H_2/O_2化学反应机理和NO_x化学反应机理模拟了平面对冲火焰。通过和实验数据比较确定了最优的化学反应机理。使用该化学反应机理模拟了管形对冲火焰。通过对比平面拉伸火焰和管形拉伸火焰,突出了火焰曲率对H_2扩散火焰温度和NO排放的影响。分析显示正曲率提高火焰温度,负曲率降低火焰温度,由于NO生成对温度的敏感性,正曲率火焰的NO排放明显高于平面火焰,反之,负曲率火焰的NO排放大大低于平面火焰。     

Small World Effects in a Harmonious Unifying Hybrid Preferential Model Networks

Small world effects in the harmonious unifying hybrid preferential model (HUHPM) networks are studied both numerically and analytically. The idea and method of the HUHPM is applied to three typical examples of unweighted BA model, weighted BBV model, and the TDE model, so-called HUHPM-BA, HUHPM-BBV and HUHPM-TDE networks. Comparing the HUHPM with current typical models above, it is found that the HUHPM networks has the smallest average path length and the biggest average clustering coefficient. The results demonstrate that the HUHPM is more suitable not only for the un-weighted models but also for the weighted models.     

The role of oxygen and hydrogen partial pressures on structural and optical properties of ITO films deposited by reactive rf-magnetron sputtering

Sn doped In₂O₃ films are deposited by rf-magnetron sputtering at 300 °C under Ar, Ar + O₂ and Ar + H₂ gas ambients. For the film prepared under argon ambient, electrical resistivity 6.5 × 10⁻⁴ Ω cm and 95% optical transmission in the visible region have been achieved optimizing the power and chamber pressure during the film deposition. X-ray diffraction spectra of the ITO film reveal (2 2 2) and (4 0 0) crystallographic planes of In₂O₃. With the introduction of 1.33% oxygen in argon, (2 2 2) peak of In₂O₃ decreases and resistivity increases for the deposited film. With further increase of oxygen in the sputtering gas mixture crystallinity in the film deteriorates and both the peaks disappeared. On the other hand, when 1.33% hydrogen is mixed with argon, the resistivity of the deposited film decreases to 5.5 × 10⁻⁴ Ω cm and the crystallinity remains almost unchanged. In case of reactive sputtering, the deposition rate is lower compared to that in case of non-reactive sputtering. HRTEM and first Fourier patterns show the highly crystalline structure of the samples deposited under Ar and Ar + H₂ ambients. Crystallinity of the film becomes lower with the introduction of oxygen in argon but refractive index increases from 1.86 to 1.9. The surface morphology of the ITO films have been studied by high resolution scanning electron microscopy.     

原位氧化Zn3N2制备P型ZnO薄膜的性能研究

采用射频反应溅射法在玻璃衬底上制备Zn3N2薄膜,然后向真空室中通入纯氧气进行热氧化制备ZnO薄膜.利用X射线衍射、扫描电子显微镜、霍尔效应测量、透射光谱和光致发光光谱等表征技术,研究了氧化温度和氧化时间对ZnO薄膜的结晶质量、电学性质和光学性能的影响.研究结果显示,450℃下氧化2h后的样品中除含有ZnO外,还有Zn3N2成分,500℃下氧化2h可以制备出电阻率为0.7Ωcm,空穴载流子浓度为1017cm-3,空穴迁移率为0.9cm2/Vs的具有c轴择优取向的p型ZnO薄膜.此时的ZnO薄膜具有良好的光学特性,紫外可见光范围内透过率为85%,处于紫外区域的激子复合产生的发光峰很强,且半高宽较窄,而处于可见光部分来自于深能级发射的绿色发光峰很弱.这种工艺制备的ZnO薄膜质量较好,有利于实现在短波长光电器件方面的应用.     

磁控溅射制备的W,WSi2,Si单层膜和W/Si,WSi2/Si多层膜应力

采用直流磁控溅射技术制备了厚度约100 nm的W,WSi2,Si单层膜和周期约为20 nm,Si膜层厚度与周期的比值为0.5的W/Si,WSi2/Si周期多层膜.利用台阶仪对镀膜前后基底表面的面形进行了测试,计算并比较了不同膜系的应力值.结果表明:W单层膜表现出较大的压应力,而W/Si周期膜则表现为张应力.WSi2单层...     

Composition, microstructure, and properties of CrNx films deposited using medium frequency magnetron sputtering

CrN_x films were deposited on stainless steel and Si (1 1 1) substrates via medium frequency magnetron sputtering in a N₂ + Ar mixed atmosphere. The influence of N₂ content on the deposition rate, composition, microstructure, mechanical and tribological properties of the as-deposited films was investigated by means of the X-ray photoelectron spectrometry (XPS), X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), nanoindentation and tribometer testing. It was found that the N atomic concentration increased and the phase transformed from a mixture of Cr₂N + Cr(N) to single-phase Cr₂N, and then Cr₂N + CrN to pure CrN phase with the increase of N₂ content. The Cr 2p_3/2 and N 1s of XPS spectra also confirmed the evolution of phase. Accordingly, all films exhibited a typical columnar structure which lies in the zone T of Thornton Model. The mixed Cr₂N and Cr(N) phases showed low hardness and high friction coefficient. Cr₂N possessed higher hardness than CrN while CrN exhibited lower friction coefficient.