Induction and inhibition of preferential enrichment by controlling the mode of the polymorphic transition with seed crystals

Both induction and inhibition of "preferential enrichment", an unusual symmetry-breaking enantiomeric-resolution phenomenon observed upon simple recrystallization of a certain kind of racemic crystals from organic solvents, have been successfully achieved by controlling the mode of the polymorphic transition during crystallization with appropriate seed crystals. Such control of the polymorphic transition can be interpreted in terms of a novel phenomenon consisting of 1) the adsorption of prenucleation aggregates, 2) the heterogeneous nucleation and crystal growth of a metastable crystalline form, and 3) the subsequent polymorphic transition into the more stable form; these three processes occur on the same surface of a seed crystal. We refer to this phenomenon as an "epitaxial transition", which has been confirmed by means of in situ attenuated total reflection (ATR) FTIR spectroscopy in solution and the solid state, differential scanning calorimetry (DSC) measurements of the deposited crystals, and X-ray crystallographic analysis of the single crystals or the direct-space approach employing the Monte Carlo method with the Rietveld refinement for the structure solution from the powder X-ray diffraction data.     

On Vaporizing Water Flow in Hot Sub-Vertical Rock Fractures

Water injection into unsaturated fractured rock at above-boiling temperatures gives rise to complex fluid flow and heat transfer processes. Examples include water injection into depleted vapor-dominated geothermal reservoirs, and emplacement of heat-generating nuclear wastes in unsaturated fractured rock. We conceptualize fractures as two-dimensional heterogeneous porous media, and use geostatistical techniques to generate synthetic permeability distributions in the fracture plane. Water flow in hot high-angle fractures is simulated numerically, taking into account the combined action of gravity, capillary, and pressure forces, and conductive heat transfer from the wall rocks which gives rise to strong vaporization. In heterogeneous fractures boiling plumes are found to have dendritic shapes, and to be subject to strong lateral flow effects. Fractures with spatially-averaged homogeneous permeabilities tend to give poor approximations for vaporization behavior and liquid migration patterns. Depending on water flow rates, rock temperature, and fracture permeability, liquid water can migrate considerable distances through fractured rock that is at above-boiling temperatures and be only partially vaporized.     

双离子束溅射淀积DLC膜的红外特性

用双离子束溅射法在50℃以下的玻璃基片上淀积了类金刚石碳(DLC)膜.研究了轰击离子能量、轰击离子束流密度及轰击源内氢/氩流量比例对淀积片红外透射特性的影响.所用波段是1.5～5.5μm.结果表明,对所有淀积样片,其相对透过率均随波长增长而增大.在每组实验中,随如上各可变参量的增大,各样片的相对透过率～波长曲线均有先上升后下降的规律.确定了各组相应的临界参数.结果还表明,轰击源不含氢并不影响DLC膜的制取,但轰击源合氢时所制得的膜具有更好的红外透射性.从结构变化的角度解释了上述规律.     

Structural, optical and electrical properties of Cd-doped SnO2 thin films grown by RF reactive magnetron co-sputtering

Transparent conducting SnO₂:Cd thin films were prepared by RF reactive magnetron co-sputtering on glass slides at a substrate temperature of 500 °C using CdO as cadmium source. The films were deposited under a mixed argon/oxygen atmosphere. The structural, optical and electrical properties were analyzed as a function of the Cd amount in the target. The X-ray diffraction shows that polycrystalline films were grown with both the tetragonal and orthorhombic phases of SnO₂. The obtained films have high transmittance and conductivity. The figure of merit of SnO₂:Cd films are in the order of 10⁻³ Ω⁻¹, which suggests that these films can be considered as candidates for transparent electrodes.     

Evolution of self-assembled Ge/Si island grown by ion beam sputtering deposition

The effect of temperature and Ge coverage on the evolution of self-assembled Ge/Si islands grown by ion beam sputtering deposition is studied. Atomic force microscopy and Raman spectroscopy are used to analyze the island morphology and the intermixing between Si and Ge. The experiments are presented in two aspects. First, when the temperature is increased, intermixing is promoted, resulting in the reappearance of low aspect ratio islands. Second, a different evolution pathway is observed, in which short islands initially don’t grow along the constant ratio of 11:1 (diameter:height) and the islands always grow faster in vertical direction. In summary, the interdiffusion, surface diffusion, and amount of Ge determines the evolution of Ge/Si islands.     

氮气含量对硅基AlN薄膜结构及性能的影响

研究了直流磁控溅射法沉积AlN薄膜过程中氮气含量对AlN薄膜结构及性能的影响.实验结果表明:当真空腔的氩气含量较低时,薄膜呈非晶态,在红外波段的傅里叶变换光谱中没有明显的吸收峰,当氮气流量为75%时薄膜中出现明显的六方AlN(100)和AlN(110)衍射峰,在波数为670～700cm-1处有强烈的吸收峰;增加氮气含量,薄膜又呈现出非晶状态.薄膜的表面粗糙度和颗粒大小都随氮气含量的增加先增大后减小..     

溅射气压对非晶Hg1-xCdx Te薄膜微观结构和化学组分的影响（英文）

采用射频磁控溅射制备了非晶态结构的Hg1-xCdxTe薄膜,并利用台阶仪、XRD、原子力显微镜、EDS等分析手段对薄膜生长速率、物相、表面形貌、组分比例进行了研究。实验结果表明,溅射气压对薄膜生长速率、微观结构、表面形貌和化学组分有直接影响。随着溅射气压增大,其生长速率逐渐降低。当溅射气压高于1.1 Pa时,薄膜XRD图谱上没有出现任何特征衍射峰,只是在2θ=23°附近出现衍射波包,具有明显的非晶态特征;当溅射气压小于1.1 Pa时,XRD谱表现为多晶结构。另外,随着溅射气压的增加,薄膜表面粗糙度逐渐减小,而且溅射气压对薄膜组成的化学计量比有明显影响,当溅射气压为1.1 Pa时,薄膜中Hg的组分比最低,而Cd组分比最高。     

Fabrication of uniform porous alumina materials by radio frequency (RF) magnetron sputtering

Fabrication of porous materials with uniform pore size distribution remains a challenge. In this paper, a kind of uniform porous alumina material was fabricated on a template of polystyrene microspheres by radio frequency (RF) magnetron sputtering. Surface of samples was observed by scanning electron microscopy (SEM), and the phase of porous materials was confirmed by X-ray diffraction (XRD). The pore size distribution of samples was tested by mercury intrusion method.     

Direct Monitoring of Thickness and Refractive Index of Optical Thin Film Deposited on Fiber End-face

We propose a system for depositing thin films on waveguides which enables low-temperature deposition and precise control of the refractive index and film thickness. It is composed of a conventional ion-beam sputtering (IBS) system and a new system for directly monitoring film characteristics during deposition. We controlled refractive indices over a wide range from 1.52 to 1.97 by moving the sputtering targets (SiO₂ and Si₃N₄) in the IBS system. The refractive index or film thickness was in-situ monitored by observing the optical power reflected from the end-face of a monitoring fiber set in the deposition chamber. Antireflection coating films were successfully deposited on a fiber end-face and a laser diode chip facet with low reflectivity from 0.05 to 0.07%. This deposition system is attractive for constructing highly functional optical devices for future photonic networks.     

HREELS investigation of hydrogenated and deuterated GaN{0001} surfaces

The vibrational properties of clean, H- and D-covered GaN{0001} surfaces were investigated by high-resolution electron energy-loss spectroscopy. Auger electron spectroscopy and low-energy electron diffraction were utilized to monitor the surface cleanliness and structure, respectively. At the clean surface the Fuchs-Kliewer surface phonon frequency was determined to 700 cm^-1 (86.8 meV). For the adsorbate-covered surfaces current structure models predict only Ga-H vibrations for surfaces of either polarity. Despite of this, the HREEL-spectra of the hydrogenated sample show a new loss structure at 3255 cm^-1 (403.6 meV) and a shoulder at 1900 cm^-1 (235.6 meV) which are attributed to N-H and Ga-H stretching vibrations, respectively. After deuterium exposure an isotope shift occurs. Again, a N-adsorbate vibration is clearly resolved. A Ga-D bending mode is observed at 390 cm^-1 (48.4 meV), indicating that vibrations of both species are present. Received 1 February 2000