Secondary electron emission of sputtered alumina films

Secondary electron emission yieldδ was measured for thin films of alumina prepared byrf sputtering technique. Single pulse method was used along with 4-gridleed optics system to determineδ. Maximum value of 4·3 was obtained at primary energy of 350 eV. The Dionne’s theory was used to analyse the results and the emission probability escape depth and absorption coefficient of secondaries were also estimated. Fairly good correlation is observed between experimental and theoretical values ofδ for beam energies upto 1 keV.     

Effect of substrate temperature on structural and materials properties of zirconium nitride films on D9 steel substrates

Thin zirconium nitride (ZrN) films were prepared by using reactive direct current (DC) magnetron sputtering onto D9 steel substrates. XRD technique was employed to study the coatings, observing variations of crystallite size, crystallite texture and lattice constant, as a function of substrate temperature. Chemical states of the ZrN thin films were determined by X‐ray photoelectron microscopy (XPS). AFM picture showed the presence of spherical shaped grains on the top of homogeneous granular surface. The hardness and elastic modulus values were measured by nanoindendation and their values are 18.5 and 343 GPa respectively. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Mechanical properties of the plasma-enhanced magnetron sputtering Si-C-N coatings

The mechanical properties of plasma-enhanced magnetron sputtering Si-C-N hard coatings with various compositions are characterized. The effect of chemical composition on the microstructure and properties of coating is investigated. The results show that the microstructure and mechanical properties of Si-C-N coatings are very sensitive to chemical composition. The nanocrystalline/amorphous composite structure is beneficial to the coating's mechanical properties. It also reveals that Si-C-N coating with low Si and high C concentrations has the highest hardness (≥40 GPa) and the best wear property with dry friction coefficient about 0.2.     

Low-temperature deposition of transparent conducting ZnO:Zr films on PET substrates by DC magnetron sputtering

Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) films were firstly deposited on polyethylene terephthalate (PET) substrates with ZnO buffer layers by DC magnetron sputtering at room temperature. Dependence of physical properties of ZnO:Zr films on deposition pressure was systematically studied. All the deposited films were polycrystalline and (1 0 0) oriented. When deposition pressure increases from 1 to 2.5 Pa, the crystallinity of the films improves and the resistivity decreases. While deposition pressure increases from 2.5 to 3.5 Pa, the crystallinity of the films deteriorates and the resistivity increases. The lowest resistivity of 1.8 × 10⁻³ Ω cm was obtained for the films deposited at the optimum deposition pressure of 2.5 Pa. All the films present a high transmittance of above 86% in the wavelength range of the visible spectrum.     

直流溅射法制备电致变色WO_3膜

采用ＷＯ３陶瓷靶直流溅射制作了电致变色膜．介绍了制膜工艺．分析测试表明，膜有无定形结构；除有正常成分ＷＯ３外，还含有来自衬底及反应室内的微量杂质．电致变色谱响应特性和电化学特性的测量证明，膜的电色活性良好．还对实验结果作了理论分析．     

129I加速器质谱分析研究

通过对129I加速器质谱(AMS)分析中影响敏度和准确度各种参数的研究,如靶电极制备、压样、靶样中辅助介质（Matrix）的选择及使用比例等,优化了用于3 MV加速器质谱仪的SO-110型离子源的条件参数,确定129I-AMS测量的最佳靶电极材料为Cu,最佳的辅助介质为Nb粉末,Nb与AgI样品的最佳体积比为3∶1。在此条件下可以获得稳定且持续的I-束流进行测量129I/127I原子比值,实验测得西安加速器质谱仪的129I/127I本底值为1.5210-14。     

磁控溅射沉积薄膜预溅射时间的光谱诊断

利用Omni-λ300系列光栅光谱仪、CCD数据采集和处理系统以及光纤导光系统等构成的等离子体光谱分析系统,实现了实时获取射频磁控溅射过程中等离子体光谱,分别对NiTa,TiAl陶瓷靶,NiAl,TiAl合金靶四种靶材的磁控溅射过程产生的等离子体进行监测,以TaⅡ333.991 nm,NiⅠ362.473 nm,AlⅠ396.153 nm和TiⅠ398.176 nm为分析线,获得了分析谱线强度随时间的变化规律,并以此为依据确定了预溅射时间,同时研究了不同溅射功率和压强对预溅射时间的影响。     

Erosion of Thin Foils by Sputtering in Hollow Cathodes

A thin copper foil placed diagonally in a cylindrical copper hollow cathode undergoes fast erosion caused by cathode sputtering. Changes in the foil shape are related to current distribution along the hollow cathode axis. The experimental results aid in understanding the increase in spectral lines intensities emitted from conical bottom hollow cathode lamps.     

非平衡磁控溅射沉积系统伏安特性模型研究

非平衡磁控溅射沉积系统的伏安特性对阴极溅射和薄膜沉积过程具有重要的影响.通过分析在常规磁控溅射沉积系统中非平衡磁场对于放电过程的影响，根据蔡尔得定律研究了非平衡磁场对磁控溅射沉积系统伏安特性影响的基本规律；根据模型和实验数据的对比证明模型正确表达了非平衡磁控溅射沉积系统中非平衡磁场对伏安特性影响的规律. 关键词： 等离子体 金属薄膜/非磁性 磁控溅射     

氧气分压对反应溅射制备TiO2薄膜带隙的影响

在不同的氧气分压下 ,用直流反应磁控溅射法制备了玻璃基TiO2 薄膜试样 ,测试了试样的荧光发射光谱。结果表明 ,氧气分压为 0 35和 0 6 5Pa时 ,荧光光谱在 370 ,4 72和 5 14nm处出现发射峰 ;氧气分压为 0 10和 0 15Pa时 ,发射光谱峰出现在 370和 4 90nm处。试样带隙为 3 35eV。0 35和 0 6 5Pa氧气分压下溅射的试样在带隙中有两个分别低于导带底 0 72和 0 94eV的缺陷能级 ,0 10和 0 15Pa氧气分压下溅射的试样在带隙中有一个位于导带底 0 2 3和 1 2 9eV之间的缺陷能带 ;增加氧气分压 ,缺陷能带转变成两个缺陷能级 ,在 0 6 5Pa氧气分压下 ,缺陷能级几乎消失。