Partial electrical potential distribution around nanospheres in metallic nanostructured films

In light of the nanostructured surface model, where half-spherical nanoparticles grow out symmetrically from a plane metallic film, the mathematical model for the partial electrical potential around nanospheres is developed when a uniform external electric field is applied. On the basis of these models, the three-dimensional spatial distribution of the partial electrical potential is obtained and given in the form of a curved surface using a numerical computation method. Our results show that the electrical potential distribution around the nanospheres exhibits an obvious geometrical symmetry. These results could serve as a reference for investigating many abnormal phenomena such as abnormal infrared effects, which are found when CO molecules are adsorbed on the surface of nanostructured transition metals.     

颗粒有序堆积多孔介质对流换热实验研究

本文采用"瞬态单吹反问题研究方法"对颗粒有序堆积多孔介质内的强制对流换热进行了实验研究。详细研究了颗粒堆积方式变化对多孔介质内对流换热的影响,并对均匀与非均匀颗粒堆积多孔介质内的对流换热特性进行了对比分析。研究表明:通过对颗粒进行合理有序堆积,可以使相应多孔介质内的压降显著降低,其综合换热效率明显提高;通过拟合获得了颗粒有序堆积多孔介质内的宏观流动换热实验关联式,其形式与传统经验公式(Ergun公式和Wakao公式)一致,但部分模型参数值远低于传统经验公式。     

聚苯乙烯多孔薄膜的密度梯度控制

利用单分散的SiO2微球自组装制备了含一种尺寸微球的SiO2胶体晶体和含多种尺寸微球的多层异质结构。对含一种尺寸微球的SiO2胶体晶体进行煅烧和刻蚀处理后,胶体晶体中空隙所占比例大于立方密堆结构的26%,形成了非密堆结构,而且刻蚀时间越长,空隙比例越大。在同样的热处理和刻蚀条件下,微球尺寸越小的胶体晶体被刻蚀的程度越高,结构中空气空隙所占的比例越大。对SiO2多层异质结构经过煅烧和刻蚀处理后,得到了空隙梯度变化的多层结构,以此为模板制备了密度梯度变化的聚苯乙烯多孔薄膜。薄膜各层之间形成了平滑的过渡,没有显示出明显的层间缺陷,且孔与孔之间没有出现3维有序多孔结构中常见的大的连通孔道。     

卷绕式螺旋形薄膜介质脉冲形成线设计

采用模块化结构,设计了一种卷绕式螺旋形薄膜介质脉冲形成线,并且对绝缘材料、电极材料的选择依据进行了分析。基于模块化卷绕式脉冲形成线,研制的重复频率脉冲方波产生器采用4个开关同步触发四级形成线模块,从而实现多模块的电压串联叠加,以达到产生高压的目的。开关采用气体火花间隙开关,每级开关及充放电采用电感隔离。研制的脉冲产生器输出电压220 kV,脉冲宽度182 ns,前沿50 ns,可10 Hz重复频率稳定运行。     

Preparation of Nd-doped BiFeO3 films and their electrical properties

The Nd-doped BiFeO₃ thin films were prepared on SnO₂(FTO) substrates spin-coated by the sol–gel method using Nd(NO₃)₃·6H₂O, Fe(NO₃)₃·9H₂O and Bi(NO₃)₃·5H₂O as raw materials. The microstructure and electric properties of the BiFeO₃ thin films were characterized and tested. The results indicate that the diffraction peak of the Nd-doped BiFeO₃ films is shifted towards right as the doping amounts are increased. The structure is transformed from the rhombohedral to pseudotetragonal phase. The crystal grain is changed from an elliptical to irregular polyhedron. Structure transition occurring in the Bi_0.85Nd_0.15FeO₃ films gives rise to the largest Pr of 64 μC/cm². The leakage conductance of the Nd doped thin films is reduced. The dielectric constant and dielectric loss of Bi_0.85Nd_0.15FeO₃ thin film at 10 kHz are 190 and 0.017 respectively.     

Electroluminescence properties of In-doped Zn2SiO4 thin films prepared by sol–gel process

The effect of In doping on the electroluminescence (EL) properties of Zn₂SiO₄:In thin films was investigated. In-doped Zn₂SiO₄ thin films were deposited on BaTiO₃ substrates and their EL properties were characterized in this study. X-ray powder diffraction patterns of In-doped Zn₂SiO₄ powders revealed a single phase of Zn₂SiO₄ for In concentrations up to approximately 1.5 mol%, whereas a secondary phase of In₂O₃ was observed for In concentrations in the range of 2–10 mol%. The maximum luminance of thin film electroluminescent (TFEL) devices varied significantly with the amount of In doping. The highest luminance with blue emission was obtained when 2 mol% In was doped. The blue emission of In-doped Zn₂SiO₄ thin film may be related to the In substitution for Zn. The 2 mol% In-doped Zn₂SiO₄ thin film exhibited blue emission with CIE color coordinates of x=0.208 and y=0.086.     

两相颗粒多孔材料导热系数研究

对固-气两相颗粒多孔材料导热系数的预测,尚未见以实验数据对其各预测模型进行分析及验证其准确度的相关文献。本文利用断电热线法测定石英砂、碳化硅、工程沙以及煤灰的导热系数;将模型预测结果与实验数据进行对比分析,结果表明,Kunii and Smith模型误差小;考虑孔隙率的影响,利用实测数据对Kunii and Smith模型进行修正,给出新的预测模型;通过与国外学者给出的实测导热系数的对比,验证了本文给出的修正模型的准确性。     

膜系光谱系数对膜层参数的一阶和二阶偏导数的计算模型

为了寻找一种膜系深入分析与设计的有力辅助计算工具,从光学薄膜光谱系数的矩阵计算理论出发,基于对矩阵求迹运算的巧妙运用,从数学上建立了准确计算膜系光谱系数关于膜层几何厚度、实际折射率和消光系数等膜层参数的一阶和二阶偏导数的解析模型。这一偏导数计算模型物理上与矩阵理论具有一致的通用性和普适性,适用于任何各向同性的均匀膜系统。在数学上也严格成立,数值编程计算不存在差分近似,精度达到了计算机浮点运算的极限精度。而且算法运算费时少,计算速度快,取得了高度准确性和便于实时化的双重优越性能,非常有利于应用于膜系设计领域来提高膜层数较大时的设计速度和效率。同时,这一模型能非常便捷和准确地给出膜系许多实用的导数信息,对膜系分析、测量和膜厚监控等领域中的相关应用具有重要的参考意义。     

A study of the evaporative deposition process: Pipes and truncated transport dynamics

We consider contact line deposition of an evaporating thin drop. Following Dupont’s proposal (unpublished), we focus on transport dynamics truncated by a maximal concentration as the single deposition mechanism. The truncated transport process, formalized as the “pipe model”, admits a characteristic shock front that has a robust functional form and depends only on local hydrodynamic properties. By applying the pipe model, we solve the density profile in different asymptotic regimes. In particular, we find that near the contact line the density profile follows a scaling law that is proportional to the square root of the concentration ratio defined as the initial solute volume concentration divided by the maximal concentration. The maximal deposit density occurs at about 2/3 of the total drying time for uniform evaporation and 1/2 for diffusion-controlled evaporation. Away from the contact line, areal density decays exponentially with the radial distance to the power of -3 for the uniform evaporation and -7 for the diffusion-controlled evaporation.     

Nanoscale formation mechanism of conducting filaments in NiO thin films

We have studied the nanoscale electrical properties of NiO thin films by using conducting atomic force microscopy (CAFM) to understand the mechanism of resistance change of the NiO thin films as we changed the applied voltage. We observed that inhomogeneous conducting filaments were generated by external voltage bias; in addition, some of the inhomogeneous conducting filaments were durable while some of them were not, and they disappeared. We deduced that the resistance change of the NiO thin films was related to inhomogeneous filamentary conducting paths generated by both Ni ions in thermodynamically unstable NiO and the existence of conducting filament segments generated by high voltage bias.