Polycrystalline silicon films prepared by metal-induced crystallisation using pre- and post-deposited aluminium on amorphous silicon

We report on the successful fabrication of polycrystalline silicon films by aluminium-induced crystallisation (AIC) of Radio frequency (rf) plasma-enhanced chemical vapour deposited (PECVD) a-Si films. The effects of annealing at different temperatures (300 and 400°C), below the eutectic temperature of the Si–Al binary system, on the crystallisation process have been studied. This work emphasises the important role of the position of the Al layer with respect to the Si layer on the crystallisation process. The properties of the crystallised films were characterised using X-ray diffraction, Raman spectroscopy, ellipsometry, field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). With an increase in the annealing temperature, it was found that the degree of crystallisation of annealed a-Si/Al and Al/a-Si films increased. The results showed that the arrangement where the Al was on top of the a-Si had a more prominent effect on crystallisation enhancement than when Al was below the a-Si. The interfacial layer between the Al and a-Si film is crucial because it influences the layer-exchange process during annealing. The oxide layer formed between the Al and the a-Si layers greatly retards the crystallisation process in the case of the Al/Si arrangement. Our investigations suggest that polycrystalline Si films formed by AIC can be used as a seed layer in solar cell fabrication.     

Fundamental relationships between deformation-induced surface roughness,critical strain localisation and failure in AA5754-O

This research employs two approaches to characterise the apparent structure observed in localised strain maps constructed from surface topography data acquired from AA5754-O sheet stock that was deformed in three in-plane stretching modes. The first uses a conventional two-point autocorrelation function (ACF), while the second uses the combination of the eigenvalue spectrum associated with each map and information theory. The results from the ACF analysis are inconclusive, implying that this technique lacks the sensitivity necessary to quantify the relationships between multi-point clustering and strain localisation. The information theory-based approach reveals that the relative spectral entropy increases monotonically, attains a maximum and then decreases sharply to the failure strain. This behaviour occurs in all three strain modes and results from two competing processes: one where the formation of structure is favourable and one where it is not. The crossover point is a clear indicator of the onset of critical strain localisation and, therefore, can be regarded as a precursor to failure because once the dominant process shifts, additional strain results in the precipitate formation of a critical strain localisation event.     

脉冲功率应用的IGBT快速驱动电路

根据绝缘栅双极型晶体管(IGBT)的工作特性,研究设计了一种应用于脉冲功率系统的开关驱动电路,实现了IGBT的快速开通。阐述了驱动电路的原理,设计了基于平面变压器的驱动电路,在驱动芯片基础上为栅极提供幅值为60 V脉冲电压,提高开关速度。最后使用Blumlein双线结构对驱动电路的性能进行了实验验证。应用这种驱动方式,提高了集电极电流上升速率。实验结果表明,在1000 V的工作电压下,通过IGBT的脉冲电流达到了470.53 A,脉冲前沿为40 ns,di/dt达到9.41 A/ns,相比数据手册提供的数据,该电流上升速度提高了7.53倍,实现了对IGBT的快速驱动。     

兰州重离子加速器控制系统DSP组件设计

针对重离子加速器部分电源的控制要求,进行了分析研究,提出并实现了一种实时、高效、多功能的控制系统。该系统基于数字信号处理器（DSP）和两片现场可编程门阵列（FPGA）芯片相结合的核心处理构架,在系统后端利用PXI总线接口配合FPGA来与工控机箱中的系统控制器和其他控制组件进行大批量数据交互;系统前端利用直接数字频率合成器、模数转换器和数模转换器等器件结合DSP和FPGA中的控制算法及相应控制机制来实现对不同电源控制参数的处理和功率的输出;平台中两组光纤模块也与FPGA相配合实现对同步触发事例等实时数据的收发和调试。     

新型宽温区高热稳定性微波功率SiGe 异质结双极晶体管

宽温区大电流下的热不稳定性严重制约着功率SiGe 异质结双极晶体管 (HBT) 在射频和微波电路中的应用.为改善器件的热不稳定性, 本文利用SILVACO TCAD建立的多指功率SiGe HBT模型, 分析了器件纵向结构中基区Ge组分分布对微波功率SiGe HBT电学特性和热学特性的影响. 研究表明, 对于基区Ge组分为阶梯分布的HBT, 由于Ge组分缓变引入了少子加速电场, 使它与均匀基区Ge组分HBT相比, 具有更高的特征频率f_T, 且电流增益β和f_T随温度变化变弱, 这有利于防止器件在宽温区工作时电学特性的漂移.同时, 器件整体温度有所降低, 但器件各指温度分布均匀性较差.考虑多指HBT各发射极指散热能力存在差异, 在器件纵向结构设计为基区Ge组分阶梯分布的同时, 对其横向版图进行发射极指间距渐变结构设计, 用于改善器件各指温度分布的均匀性, 进而提高HBT的热稳定性.结果表明, 与基区Ge组分为均匀分布的等发射极指间距结构HBT相比, 新器件各指温度分布均匀性明显改善, f_T保持了较高的值, 且β和f_T 随温度变化不敏感, 热不稳定性得到显著改善, 显示了新器件在宽温区大电流下工作的优越性. 关键词： SiGe 异质结双极晶体管 Ge组分分布 发射极指间距渐变技术 热稳定性     

基于高速肖特基二极管的100 ps瞬态取样门设计与仿真

 皮秒级瞬态取样门主要应用于激光聚变实验和高能物理实验中,对单次高速脉冲进行实时取样。提出了一种新颖的基于肖特基二极管桥的平衡取样门,给出其模型和具体电路设计。电路仿真结果表明,对称的选通设计保证了选通脉宽为100 ps时,取样间隔也为100 ps,取样门带宽为4.4 GHz,可应用于多路超短激光脉冲取样。     

基于视频的精确放疗摆位系统研究

重点介绍了中国科学院等离子体物理研究所“精确放射治疗系统”课题组在基于视频的摆位方法领域的最新研究成果,如基于双目视觉的摆位系统、基于轮廓匹配的位置测量系统和呼吸门控系统。简要介绍了这些方法的原理、应用场合及应用前景。This paper introduces the newest research production on patient positioning method in accurate radiotherapy brought by Accurate Radiotherapy Treating System （ARTS） research team of Institute of Plasma Physics of Chinese Academy of Sciences, such as the positioning system based on binocular vision, the position-measuring system based on contour matching and the breath gate controlling system for positioning. Their basic principle, the application occasion and the prospects are briefly depicted.     

Quantum computation with ions in microscopic traps

We discuss a possible experimental realization of fast quantum gates with high fidelity with ions confined in microscopic traps. The original proposal of this physical system for quantum computation comes from Cirac and Zoller (Nature 404, 579 (2000)). In this paper we analyse a sensitivity of the ion-trap quantum gate on various experimental parameters which was omitted in the original proposal. We address imprecision of laser pulses, impact of photon scattering, nonzero temperature effects and influence of laser intensity fluctuations on the total fidelity of the two-qubit phase gate.     

Scheme for teleporting an unknown atomic state to any node in a quantum communication network

We propose a scheme for teleporting an unknown atomic state. In order to realize the teleportation to any node in a quantum communication network, an n-atom Greenberger-Horne-Zeilinger (GHZ) state is needed, which is utilized as the quantum channel. From this n-atom GHZ state, two-node entanglement of processing and receiving teleported states can be obtained through the quantum logic gate manipulation. Finally, for the unequally weighted GHZ state, probabilistic teleportation is shown.     

光化学气相淀积SiGe/Si材料的机制分析

本文对光化学气相淀积SiGe/Si过程中气相反应机制和表面反应历程进行了分析和讨论.利用表面反应动力学的有关理论,结合光化学气相淀积的特点,推导出光化学气相淀积SiGe/Si过程中的生长速率和生长压力的关系.并给出该理论结果和实际实验结果的比较.