Nanoscale imaging of oxidized copper foil covered with chemical vapor deposition-grown graphene layers

Characterization of the geometrical and structural characteristics of oxidized Cu area in high resolution is crucial for tracking the change in morphology, exploring interactions between graphene layers and Cu substrates and revealing the mechanism for the orientation-dependent oxidation of Cu. Here, we reported experimental results on nanoscale imaging of natural oxidation of the polycrystalline Cu substrate coated by partial-coverage chemical vapor deposition (CVD)-grown graphene stored in dryer under ambient conditions for up to 10 months. Scanning electron microscope (SEM), together with atomic force microscope (AFM), Raman, and X-ray photoelectron spectroscopy (XPS), was used for systematically studying the morphological and compositional changes at nanoscale during oxidation. The appearance of oxidized Cu substrates could be unambiguously distinguished from the unoxidized regions based on their distinctly different morphologies in SEM images, and the underlying mechanism was discussed in detail. By analyzing a millimeter-seized polycrystalline Cu substrate, we found that the oxidation of polycrystalline Cu substrate depends sensitively on both orientation of graphene layers and Cu substrates. Furthermore, the time-dependent oxidation evolution of Cu substrate was also established, and the oxidation rate was readily determined. The findings reported here will have important implications for developing protection coatings for Cu.     

A multiscale gradient-dependent plasticity model for size effects

The mechanical behaviour of polycrystalline material is closely correlated to grain size. In this study, we investigate the size-dependent phenomenon in multi-phase steels using a continuum dislocation dynamic model coupled with viscoplastic self-consistent model. We developed a dislocation-based strain gradient plasticity model and a stress gradient plasticity model, as well as a combined model, resulting in a theory that can predict size effect over a wide range of length scales. Results show that strain gradient plasticity and stress gradient plasticity are complementary rather than competing theories. The stress gradient model is dominant at the initial strain stage, and is much more effective for predicting yield strength than the strain gradient model. For larger deformations, the strain gradient model is dominant and more effective for predicting size-dependent hardening. The numerical results are compared with experimental data and it is found that they have the same trend for the yield stress. Furthermore, the effect of dislocation density at different strain stages is investigated, and the findings show that the Hall–Petch relation holds for the initial strain stage and breaks down for higher strain levels. Finally, a power law to describe the size effect and the transition zone between the strain gradient and stress gradient dominated regions is developed.     

First principles calculation of the opto-electronic properties of (110) growth axis SiGe superlattices

Using two versions of the first principles full potential linear muffin-tin orbitals method (FPLMTO) which enable an accurate treatment of the interstitial regions, the electronic and optical properties of (110) growth axis Si/SiGe superlattices are investigated. A comparative study with (001) growth axis superlattices is made. In particular, it is found that the bottom of the conduction band (CB) is closer to Γ$\Gamma$ in the (110) system but the optical activity is not enhanced. Furthermore, the absorption spectra of the superlattices are calculated and are found to be quite different from those of bulk Si and Ge but fairly close to their average.     

Effect of gate engineering in JLSRG MOSFET to suppress SCEs: An analytical study

In this work, an analytical model of gate-engineered junctionless surrounding gate MOSFET (JLSRG) has been proposed to uncover its potential benefit to suppress short-channel effects (SCEs). Analytical modelling of centre potential for gate-engineered JLSRG devices has been developed using parabolic approximation method. From the developed centre potential, the parameters like threshold voltage, surface potential, Electric Field, Drain-induced Barrier Lowering (DIBL) and subthershold swing are determined. A nice agreement between the results obtained from the model and TCAD simulation demonstrates the validity and correctness of the model. A comparative study of the efficacy to suppress SCEs for Dual-Material (DM) and Single-Material (SM) junctionless surrounding gate MOSFET of the same dimensions has also been carried out. Result indicates that TM-JLSRG devices offer a noticeable enhancement in the efficacy to suppress SCEs by as compared to SM-JLSRG and DM-JLSRG device structures. The effect of different length ratios of three channel regions related to three different gate materials of TM-JLSRG structure on the SCEs have also been discussed. As a result, we demonstrate that TM-JLSRG device can be considered as a competitive contender to the deep-submicron mainstream MOSFETs for low-power VLSI applications.     

Intrinsic Flexibility of the Zeolitic Imidazolate Framework ZIF‐7 Unveiled by CO2 Adsorption and Hg Intrusion

ZIF‐7, built as an assembly of Zn^II centers and benzimidazolate ligands, shows prominent S‐shaped isotherms upon CO₂ adsorption that can be attributed to sorbate‐induced gate‐opening phenomena involving a narrow‐to‐large pore phase transition. This peculiar sorption pattern can be captured via the formulation of thermodynamic isotherms, providing a direct enthalpic and entropic view of the gate‐opening process. Relying on such an approach, an energy barrier with preferential enthalpic nature for CO₂ adsorption/desorption in the gate‐opening region could be unveiled. Moreover, the elastic energy involved during the gate‐opening process was revisited to 1.4–2.8 kJ mol^?1 of solid in the temperature range 273–323 K, matching the value measured by isostatic compression of a ZIF‐7_lp sample filled with DMF and showing a dominant entropic contribution.     

A Light‐up Logic Platform for Selective Recognition of Parallel G‐Quadruplex Structures via Disaggregation‐Induced Emission

The design of turn‐on dyes with optical signals sensitive to the formation of supramolecular structures provides fascinating and underexplored opportunities for G‐quadruplex (G4) DNA detection and characterization. Here, we show a new switching mechanism that relies on the recognition‐driven disaggregation (on‐signal) of an ultrabright coumarin‐quinazoline conjugate. The synthesized probe selectively lights‐up parallel G4 DNA structures via the disassembly of its supramolecular state, demonstrating outputs that are easily integrable into a label‐free molecular logic system. Finally, our molecule preferentially stains the G4‐rich nucleoli of cancer cells.     

Enzyme-free and DNA-based universal platform for the construction of various logic devices based on graphene oxide and G-quadruplex

In the fields of biocomputing and biomolecular, DNA molecules are applicable to be regarded as data of logical computing platform that uses elaborate logic gates to perform a variety of tasks. Graphene oxide (GO) is a type of novel nanomaterial, which brings new research focus to materials science and biosensors due to its special selectivity and excellent quenching ability. G-quadruplex as a unique DNA structure stimulates the intelligent application of DNA assembly on the strength of its exceptional binding activity. In this paper, we report a universal logic device assisted with GO and G-quadruplex under an enzyme-free condition. Integrated with the quenching ability of GO to the TAMRA (fluorophore, Carboxytetramethylrhodamine) and the enhancement of fluorescence intensity produced by the peculiar binding of G-quadruplex to the NMM (N-methylmesoporphyrin IX), a series of basic binary logic gates (AND. OR. INHIBIT. XOR) have been designed and verified through biological experiments. Given the modularity and programmability of this strategy, two advanced logic gates (half adder and half subtractor) were realized on the basis of the same work platform. The fluorescence signals generated from different input combinations possessed satisfactory results, which provided proof of feasibility. We believe that the proposed universal logical platform that operates at the nanoscale is expected to be utilized for future applications in molecular computing as well as disease diagnosis.     

一款2 G/s采样率20 GHz带宽主从式跟踪保持电路设计研究

设计了一款全差分、20 GHz带宽主从式跟踪保持芯片(MS-THA)。该芯片采样率为2 G/s,工作带宽大于20 GHz,采用0.13μm SiGe BiCMOS工艺实现。该芯片采用传统的开关发射极跟随器(SEF)作为跟踪保持核心电路,Cherryhooper电路作为输入缓冲和输出缓冲的带宽增强核心电路,并利用交叉反馈电容抑制馈通。为了验证上述电路的有效性,设计了一个单级THA电路,测试结果为MS-THA电路提供了足够的支持。在单电源+3.3 V供电、输入直流电平为0 V,2 G/s采样率以及-3 dBm输入信号功率条件下,获得的单端输出无杂散动态范围小于-23.5 dB,总功耗约为300 mW。     

基于互连线电容耦合的SR锁存电路研究

通过对线间电容耦合模型的研究, 提出了一种基于互连线电容耦合的SR锁存电路设计方案. 该方案首先分析互连线间电容耦合关系, 利用MOS管栅极电容模拟互连线电容; 然后利用电容耦合结构与线计算特性, 设计或非逻辑门电路, 在此基础上实现基于互连线电容耦合的SR锁存电路; 最后在TSMC 65nm Spectre环境下仿真验证. 结果表明 所设计的电路逻辑功能正 确, 且具有低硬件开销特性.     

Resonant-interaction-induced Rydberg antiblockade and its applications

Different from the conventional Rydberg antiblockade (RAB) regime that either requires weak Rydberg-Rydberg interaction (RRI), or compensates the RRI-induced energy shift by introducing off-resonant interactions, we show that RAB regime can be achieved by resonantly driving the transitions between ground state and Rydberg state under strong RRI. The Rabi frequencies are of small amplitude and time-dependent harmonic oscillation, which plays a critical role for the presented RAB. The proposed unconventional RAB regime is used to construct high-fidelity controlled-Z (CZ) gate and controlled-not (CNOT) gate in one step. Each atom requires single external driving. And the atomic addressability is not required for the presented unconventional RAB, which would simplify experimental complexity and reduce resource consumption.