ZnTe（ZnTe：Cu）多晶薄膜的XPS研究

用共蒸发法在室温下制备了ZnTe及ZnTe：Cu多晶薄膜，测量了电导率温度曲线，发现不掺杂的ZnTe薄膜的暗电导随温度的增加而线形增加，呈常规的半导体材料特征；掺Cu的ZnTe薄膜在温度较低时，lnσ随温度升高而缓慢增加，随后缓慢降低，达到一极小值，当温度继续升高时又陡然增加，呈现异常现象。用XPS研究了N2气氛下退火前后表面状态，发现不掺Cu的ZnTe薄膜呈现富Te现象。掺Cu后Te氧化明显，以ZnTe形式存在的Te明显减少；ZnTe：Cu薄膜中Zn的含量在退火前后变化明显，退火前，Zn主要以ZnTe形式存在，退火后Zn原子向表面扩散，使表面成分更加均匀，谱峰变宽；退火时，部分Cu原子进入晶格形成CuxTe相，引起载流子浓度变化，导致ZnTe：Cu多晶薄膜的电导温度关系异常。     

一个次氯酸根比色荧光探针及其逻辑行为（英文）

利用次氯酸根(ClO-)的氧化性质和Cu+与Cu2+不同的配位性质,一种高效的可用于探测ClO-的铜离子化合物CS1被合成出来。通过吸收和发射光谱系统地研究了CS1对ClO-的传感性能。结果表明,在Cu+存在条件下,CS1的光谱强烈受到OCl-影响:最大吸收峰从396 nm红移到545 nm(Δλ=149 nm);520nm处的荧光强度降低近25倍。以Cu+和ClO-为输入信号,以470 nm和396 nm吸收峰比值(A470/A396)为输出信号,构建了一个基于CS1的AND逻辑门,并且可以用乙二胺四乙酸二钠盐(EDTA)对其进行简单重置。     

Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor

The interfacial characteristics of Al/Al2O3/ZnO/n-GaAs metal-oxide-semiconductor (MOS) capacitor are investigated. The results measured by X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) show that the presence of ZnO can effectively suppress the formations of oxides at the interface between the GaAs and gate dielectric and gain smooth interface. The ZnO-passivated GaAs MOS capacitor exhibits a very small hysteresis and frequency dispersion. Using the Terman method, the interface trap density is extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

All-optical logic AND-NOR gate with three inputs based on cross-gain modulation in a semiconductor optical amplifier

We report the realization of a novel all-optical logic AND-NOR gate based on cross-gain modulation (XGM). The used scheme requires only one SOA to perform the logic gate with three input signals. A 8.5 dB dynamic extinction ratio with a switching time of about 650 ps for the rise time and 100 ps for the fall time.     

光化学气相淀积SiGe/Si材料的机制分析

本文对光化学气相淀积SiGe/Si过程中气相反应机制和表面反应历程进行了分析和讨论.利用表面反应动力学的有关理论,结合光化学气相淀积的特点,推导出光化学气相淀积SiGe/Si过程中的生长速率和生长压力的关系.并给出该理论结果和实际实验结果的比较.     

Scheme for teleporting an unknown atomic state to any node in a quantum communication network

We propose a scheme for teleporting an unknown atomic state. In order to realize the teleportation to any node in a quantum communication network, an n-atom Greenberger-Horne-Zeilinger (GHZ) state is needed, which is utilized as the quantum channel. From this n-atom GHZ state, two-node entanglement of processing and receiving teleported states can be obtained through the quantum logic gate manipulation. Finally, for the unequally weighted GHZ state, probabilistic teleportation is shown.     

带隙法测定SiGe/Si材料的应变状态

从固体模型理论的结果出发，计算了生长于Si（100）衬底上x值小于085的Si_1-xGe_x合金材料（能带结构为类Si结构）的间接带隙与应变的关系，结 果表明，应变的S iGe材料的带隙和完全弛豫状态下材料的带隙之差与应变呈线性关系.基于这一结果，提出了 用测量带隙来间接测定SiGe/Si应变状态的方法.用带隙法和x射线双晶衍射法测量了不同应 变状态下的SiGe/Si多量子阱材料的应变弛豫度，两者可以较好的符合，表明带隙法测量SiG e应变弛豫度是可行的. 关键词： SiGe合金 应变 带隙     

应变Si1-xGex层中p型杂质电离常温和低温特性

本文采用解析的方法计算了应变Si1-xGex层中p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系.发现常温时,在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度的先变小,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加先变大,而后几乎不变;重掺杂时,杂质电离能变为0后,杂质电离度为1.低温下,轻掺杂时,载流子低温冻析效应较为明显,杂质的电离度普遍较小,当掺杂浓度大于Mott转换点时,载流子冻析效应不再明显,电离率迅速上升到1.在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度先变小,后变大,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加变大;重掺杂时,杂质电离能变为0后,杂质电离度为1.     

双稳动力学系统中耦合效应对逻辑随机共振现象的增强作用

研究了电路耦合作用对逻辑随机共振现象以及逻辑门器件稳定性的影响．相对于单个的逻辑门电路,耦合的逻辑门器件可以在更宽的噪声范围内都保持逻辑运算的准确性,即耦合作用可以增强逻辑随机共振现象．此外,这种增强效应随着耦合体系尺度的增大而增大,但是当体系尺度达到一定程度时,这种增强作用达到一个稳定值．最后还考察了耦合强度的影响,发现随着耦合强度的增加,逻辑门器件可以保持逻辑运算准确性所对应的噪声区间非单调地改变,表现出一种共振的行为.