A heuristic approach for airport gate assignments for stochastic flight delays

To make good flight to gate assignments, not only do all the relevant constraints have to be considered, but stochastic flight delays that occur in actual operations also have to be taken into account. In past research, airport gate assignments and stochastic disturbances have often been handled in the planning and the real-time stages separately, meaning that the interrelationship between these stages, as affected by such delays, has been neglected. In this research, we develop a heuristic approach embedded in a framework designed to help the airport authorities make airport gate assignments that are sensitive to stochastic flight delays. The framework includes three components, a stochastic gate assignment model, a real-time assignment rule, and two penalty adjustment methods. The test results are based on data supplied by a Taiwan international airport, and show that the proposed framework performs better than the current manual assignment process and the traditional deterministic model.     

Kinetics of Central Ion Electroreduction in Cerium (IV)-Decatungstate

A general characteristics is given to the kinetics of electroreduction of cerium-decatugstate anions on mercury, polycrystalline gold, and the pyrolytic-graphite basis plane in acetate buffer solutions (pH 3.5-6.0). Based on the analysis of UV absorption spectra, the ratio of two reactant forms differing in the protonation degree in solutions under study is estimated. At a negatively charged mercury electrode, the reduction of the Ce(IV) central ion is shown to proceed as an outer-sphere process with classical manifestations of the psi-prime effect (polarization curves reveal a current minimum which deepens with supporting electrolyte dilution and an increase in the reactant negative charge). On the positively charged surface, the current is observed to increase with an increase in the supporting electrolyte concentration, which is interpreted in terms of the strong adsorption of the reactant and its coadsorption with cations. The gold electrode demonstrates pronounced effects of strong chemisorption. Adsorption complications observed on pyrolytic graphite are shown to become strongther for surfaces with more pronounced nonideal behavior. For low concentrations of atomar steps (apparently, for low coverages of pyrolytic-graphite surface with the adsorbed reactant), the quasireversible electron transfer with the rate increasing with increasing pH is observed.     

The Effect of Bulk Magnetic Susceptibility on Solid State NMR Spectra of Paramagnetic Compounds

The effect of bulk magnetic susceptibility (BMS) on solid state NMR spectra of paramagnetic compounds was investigated theoretically and experimentally. The BMS shift was calculated for cylindrical and spherocylinderical containers with some ratios of the lengthLand the diameterD. The results show the best resolution can be obtained by using a long cylindrical sample container withL/D> 10 and by exciting only the region near the center of the container. The effect of the random orientations and distributions of crystallites in a powder sample was also calculated according to a model proposed by Schwerket al.[J. Magn. Reson. A119, 157 (1996)] with removing the Fermi contact term from their model. Static and the magic-angle spinning¹³C NMR spectra were recorded on two paramagnetic compounds of Ln(C₂D₅SO₄)₃· 8H₂O where Ln = Pr, Yb. The modified theory predicts the BMS broadening of the experimental spectra very well.     

Y掺杂Al2O3高k栅介质薄膜的制备及性能研究

利用射频反应共溅射方法制备了Y掺杂Al₂O₃电介质薄膜，用掠入射x射线衍射检测了薄膜的结构，用高分辨率扫描电子显微镜(HRSEM)、原子力显微镜(AFM)观察了薄膜断面和表面形貌，用高频C-V和变频C-V及J-V测量了样品的电学特性. 结果表明，Y的掺入使电介质薄膜的介电常数k有了很大提高(8.14—11.8)，并体现出了较好的介电特性. 分析认为：与氧具有较大电负性差的Y离子的加入，增大了薄膜中的金属—氧键(M—O)的强度；同时，Y的加入使Al₂O₃的结构和原子配位发生了改变，从而提高了离子极化对薄膜介电常数的贡献. 退火前后的XRD谱均显示薄膜为非晶态；HRSEM断面和AFM形貌像显示所制备的薄膜非常平整，能够满足器件要求. 关键词： 高k栅介质 掺杂氧化铝 射频反应溅射     

Grain Growth in Polycrystalline Thin Films of Semiconductors

Grain growth in thin films is usually abnormal, leading not only to an increase in the average grain size, but also to an evolution in the shape of the grain size distribution and to an evolution in the distribution of grain orientations. The latter can be driven by surface, interface or strain energy minimization, depending on film and substrate properties and on deposition conditions, and can lead to different final textures depending on which energy dominates.In semiconductor films, as in other materials, grain growth stagnation coupled with texture-selective driving forces leads to secondary grain growth, the rate of which is higher in thinner films. Self ion-bombardment enhances the rate of pre-stagnation grain growth, and doping of Si with electron donor leads to enhanced pre-stagnation grain growth as well as surface-energy-driven secondary grain growth. The effects of ion-bombardment and dopants on grain growth in Si can be understood in terms of associated increases in point defect concentrations and the effects of point defects on grain boundary mobilities.     

量子计算机

简要介绍了量子计算机的基本概念及实验方案。     

单光子时间测量中的本底研究

讨论了单光子时间测量中的本底来源和时间分布, 通过加符合门的方法, 有效地抑止了偶然符合本底, 消除了辐射在光电倍增管光阴极窗上产生的切伦科夫本底.     

Gradient method of optimal control applied to the operation of a dam water gate

An extension of the authors' previous methods is presented for the optimal control of flood propagation via a dam gate, based on a combination of the finite element and gradient methods. It is assumed in previous papers that the control duration is the same as the duration of the flood. However, the duration of the control does not necessarily coincide with that of the flood flow. To overcome this difficulty, the gradient method is applied to solve the free terminal time-fixed terminal condition problem. It is shown that the water elevation can be controlled exactly the same as with the previously presented method. It is also shown that the computation can be terminated at a far shorter time than the terminal time of the flood.     

源、漏到栅距离对次亚微米ggNMOS ESD保护电路鲁棒性的影响

基于对静电放电(electrostatic discharge,ESD)应力下高电压、大电流特性的研究,本文通过优化晶格自加热漂移-扩散模型和热力学模型,并应用优化模型建立了全新的0.6 μm CSMC 6S06DPDM-CT02 CMOS工艺下栅接地NMOS (gate grounded NMOS,ggNMOS)ESD保护电路3D模型,对所建模型中漏接触孔到栅距离(drain contact to gate spacing,DCGS)与源接触孔到栅距离(source contact to gate sp 关键词： 栅接地NMOS 静电放电 漏接触孔到栅的距离 源接触孔到栅的距离     

低工作电压聚噻吩薄膜晶体管

以高掺杂Si单晶片作为衬底且充当栅电极,采用磁控溅射法在硅片上沉积HfTiO薄膜作为栅介质层,聚三己基噻吩(P3HT)薄膜作为半导体活性层,金属Au作为源、漏电极,并采用十八烷基三氯硅烷(OTS)对栅介质层表面修饰,在空气环境下成功地制备出聚合物薄膜晶体管(PTFT).PTFT器件测试结果表明,该晶体管在低的驱动电压(<-1 V)下仍呈现出良好的饱和行为,其阈值电压和有效场效应迁移率分别为0.4 V和2.2×10^-2 cm²/V ·s.通过对金属-聚合物-氧化物 关键词： 聚合物薄膜晶体管 聚三己基噻吩 场效应迁移率 k栅介质')" href="#">高k栅介质