Banach空间二阶非线性微分方程的弱Carathéodory解

本文定义了二阶微分方程的弱 Carathéodory解 ,在不涉及紧型条件的情形下 ,直接用迭代法证明了 Banach空间二阶非线性常微分方程两点边值问题存在唯一解 ,并给出逼近解迭代序列的误差估计 ,对周期边值问题得到类似的结果     

Identity principles for commuting holomorphic self-maps of the unit disc

Let f,g be two commuting holomorphic self-maps of the unit disc. If f and g agree at the common Wolff point up to a certain order of derivatives (no more than 3 if the Wolff point is on the unit circle), then f≡g.     

一类含参广义集值拟变分包含组的解的灵敏性分析

本文引入了一类新的含参广义集值拟变分包含组,应用隐预解算子技巧,建立了该类变分包含组与一类不动点问题的等价性,在适当的条件下,分析了含参广义集值拟变分包含组的解的灵敏性,所得结果推广改进了最新文献中的许多结果．     

Focusing and diffraction by an optical lens and a small circular aperture

Based on the vectorial Rayleigh–Sommerfeld diffraction integrals, analytical expressions for the transversal and axial field distribution of plane waves propagating through a thin lens followed by a small circular aperture are derived and used to study the focusing and diffraction properties of plane waves. Some special cases of our general result are discussed, and illustrative numerical calculation results are given. It is found that the vectorial nonparaxial approach should be applied if the aperture dimension is comparable with the wavelength or the focusing is strong.     

Surface structures formed by individual adsorption and coadsorption of Mn and Bi on Cu(0 0 1), studied by LEED

We have studied the individual adsorption of Mn and Bi, and their coadsorption on Cu(0 0 1) by low-energy electron diffraction (LEED). For Mn, we have determined the c(2 × 2) structure formed at 300 K, whose structure had been determined by several methods. We reconfirmed by a tensor LEED analysis that it is a substitutional structure and that a previously reported large corrugation (0.30 Å) between substitutional Mn and remaining surface Cu atoms coincides perfectly with the present value. In the individual adsorption of Bi, we have found a c(4 × 2) structure, which is formed by cooling below ∼250 K a surface prepared by Bi deposition of ∼0.25 ML coverage at 300 K where streaky half-order LEED spots appear. The c(4 × 2) structure has been determined by the tensor LEED analysis at 130 K and it is a substitutional structure. In the coadsorption, we found a c(6 × 4) structure, which has been determined by the tensor LEED analysis. It is very similar to the previously determined structure of the c(6 × 4) formed by coadsorption of Mg and Bi, and embedded MnBi₄ clusters are arranged in the top Cu layer instead of MgBi₄. Large lateral displacements of Bi atoms in the c(6 × 4)-(Mn + Bi) suggest that the Mn atoms undergo the size-enhancement caused by their large magnetic moment.     

On the duration of the total eclipse of a satellite of a body

This paper solves the problem of the duration of the total eclipseof a satellite of a body, provided that (a) the body is sphericalin shape and the mass distribution inside the body is sphericallysymmetrical; (b) the satellite is a very small object; (c) thesatellite's orbit around a body is circular and the satellitecan pass through the centre of its shadow; (d) a source of lightis the source of the conical body's shadow (umbra) and it doesnot change its apparent position in the sky; (e) there are noperturbations on the satellite's orbit. The solution presentedrepresents the general discussion of the problem based on utilizationof some parts of the theory of contraction mappings.     

用变形全息透镜实现变形分数傅里叶变换

利用一发散点光源和一束倾斜平行光制作出在两个垂直方向上具有不同焦距的变形全息透镜,且用此全息元件实现了变形分数傅里叶变换。变形全息透镜两个方向上的焦距随全息记录条件和再现条件而变化,分析了用这种全息透镜实现变形分数傅里叶变换的条件。实验表明,用该元件能够方便地实现任意级次的变形分数傅里叶变换。     

超声光栅实验及其多普勒频移的一种简单研究方法

采用光子学方法,对超声光栅衍射实验和实验中出现的多普勒频移现象进行了研究,所得结论与采用光的波动性观点的惠更斯-菲涅耳原理及傅里叶变换等常规方法相同.该方法进一步加深了对衍射的本质和光的粒子性的理解并对光子的信息传递能力有初步的认识.     

Zone specificity in low energy electron stimulated desorption of Cl from reconstructed Si(1 1 1)-7 × 7:Cl surfaces

Diffraction in electron stimulated desorption has revealed a propensity for Cl⁺ desorption from rest atom vs. adatom areas and unfaulted vs. faulted zones of Cl-terminated Si(1 1 1)-(7 × 7) surfaces. We associate the 15 eV ± 1 eV threshold with ionization of Si-Cl σ-bonding surface states and formation of screened two-hole states with Si 3s character. Similar specificity is observed from A and B reconstructions. This can be due to reduced screening in unfaulted regions and increased hole localization in Si back-bonds within faulted regions.