Judd--Ofelt analysis of spectra and experimental evaluation of laser performance of Tm3+ doped Lu2SiO5 crystal

This paper reports that the Tm^3＋：Lu2SiO5 （Tm：LSO） crystal is grown by Czochralski technique. The roomtemperature absorption spectra of Tm：LSO crystal are measured on a b-cut sample with 4 at.% thulium. According to the obtained Judd-Ofelt intensity parameters Ω2=9.3155×10^-20 cm^2, Ω4=8.4103×10^-20 cm^2, Ω6=1.5908×10^-20 cm^2, the fluorescence lifetime is calculated to be 2.03 ms for ^3F4 → ^3H6 transition, and the integrated emission cross section is 5.81×10^-18 cm^2. Room-temperature laser action near 2μm under diode pumping is experimentally evaluated in Tm：LSO. An optical-optical conversion efficiency of 9.1% and a slope efficiency of 16.2% are obtained with continuouswave maximum output power of 0.67 W. The emission wavelengths of Tm：LSO laser are centred around 2.06μm with spectral bandwidth of -13.6 nm.     

基于光纤光栅的高功率光纤激光器

分析了光纤光栅的选频原理以及光纤光栅基高功率光纤激光器的阈值特性和输出特性.采用紫外写入的光纤光栅做谐振腔,研制了全光纤结构的高功率光纤激光器,泵浦阈值为186 mW, 最大输出功率1.78 W,斜率效率59%,实验结果与理论分析基本吻合.     

主副垂直腔面发射激光器动力学系统混沌输出的时延特征及带宽分析

基于垂直腔面发射激光器(VCSEL)的自旋反转模型, 数值研究了由一个光反馈VCSEL (定义为主VCSEL, M-VCSEL)输出的混沌光单向注入到另一个VCSEL (定义为副VCSLE, S-VCSEL)所构成的主副VCSELs系统的混沌动力学特性, 分析了注入强度、M-VCSEL与S-VCSEL之间的频率失谐以及M-VCSEL所受到的光反馈强度对系统混沌输出时延特征(包括强度时延特征(I-TDS) 和相位时延特征(P-TDS))以及输出带宽(BW)的影响. 结果显示: 通过调节注入强度和频率失谐, 该系统混沌输出的两个偏振分量(X-PC和Y-PC)的P-TDS和I-TDS可以同时得到抑制; 进一步分析注入强度和频率失谐对混沌BW的影响, 发现在较大负频率失谐区域, 系统可输出BW超过30 GHz 的X-PC和Y-PC混沌信号; 结合系统混沌输出信号的TDS与BW在注入强度和频率失谐参量空间下的演化特性, 可确定宽带宽、低时延特征混沌信号输出的参量空间区域. 此外, 通过合理调节M-VCSEL 所受到的光反馈强度, 可以显著优化系统的混沌输出信号质量.     

Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser

Optical gain characteristics of Ge_(1_x)Snμx are simulated systematically.With an injection carrier concentration of 5×10~(18)/cm~3 at room temperature,the maximal optical gain of Ge_(0.922)Sn_(0.078) alloy(with n-type doping concentration being 5×10~(18)/cm~3) reaches 500 cm~(-1).Moreover,considering the free-carrier absorption effect,we find that there is an optimal injection carrier density to achieve a maximal net optical gain.A double heterostructure Ge_(0.554)Si_(0.289)Sn_(0.157)/Ge_(0.922)Sn_(0.078)/Ge_(0.554)Si_(0.289)Sn_(0.157) short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density.The simulation values of the device threshold current density J_(th)are 6.47 kA/cm~2(temperature:200 K,and λ=2050 nm),10.75 kA/cm~2(temperature:200 K,and λ=2000 nm),and23.12 kA/cm~2(temperature:300 K,and λ=2100 nm),respectively.The results indicate the possibility to obtain a Si-based short-wave infrared Ge_(1-x)Sn_x laser.     

基于脉冲石英增强光声光谱的中红外超高灵敏CO探测

发展了一种超高灵敏的CO痕量气体测量装置,该装置采用4.65μm脉冲式中红外外腔量子级联激光器作为激发光源,结合石英增强光声光谱技术,对2135~2225cm-1之间的CO基频振动光谱带R支进行连续光谱扫描。水被加入到被测气体中,以加快较慢的CO分子振动-平动弛豫率。在锁相放大器时间常数为3ms,激光器占空比和扫描速率为50%和18cm-1/s时,获得的最小探测极限为4.6×10-8(体积分数),与之对应的归一化噪声等效吸收系数为1.07×10-8 cm-1 W/Hz。     

碳纳米管锁模双包层光纤激光器的实验研究

本文采用双包层掺镱光纤作为增益介质,用单壁碳纳米管作为饱和吸收体,获得最高输出功率为336 mW的锁模脉冲激光.用飞秒激光诱导水击穿法直接在单模光纤上制备出D形区,通过在D形光纤上滴涂单壁碳纳米管溶液,成功制备出碳纳米管饱和吸收体,并对其饱和吸收特性进行测试,发现其调制深度为27％.利用该饱和吸收体作为锁模器件,制备出具有环形腔结构的锁模光纤激光器.当抽运功率为4W时,获得了脉宽为93.8 fs,中心波长为1083.8 nm,3 dB谱宽为8.6 nm,重复频率为5.59 MHz,平均功率为336 mW的飞秒脉冲激光输出.     

第四代光源

 第四代光源（X射线激光）是继第三代同步辐射光源以后,人们正在探索之中的新一代光源,它在亮度、相干性和时间结构上都大大优于第三代同步辐射光源。从目前发展的趋势来看,新一代的短脉冲、高亮度、可调的相干X射线光源将是基于自放大自发辐射原理的高增益自由电子激光（SASE FEL）。综述了第四代光源的由来、它和SASE的关系, 它的优异特性、发展现状以及应用前景。     

888 nm LD抽运Nd∶YVO4被动锁模皮秒振荡器

报道了基于888 nm半导体抽运Nd∶YVO4晶体连续被动锁模的皮秒振荡器。通过热激发抽运方式改善激光器的热性能,提高锁模振荡器输出的平均功率与单脉冲能量。利用半导体可饱和吸收体(SESAM)实现激光器锁模运转的启动与维持。在抽运功率为60 W时,获得最大输出功率为15 W,重复频率为53 MHz的皮秒脉冲输出,光-光转换效率为24%。在输出功率为15 W时脉冲宽度为45 ps。     

Terahertz radiation generation by beating of two spatial-Gaussian lasers

Terahertz radiation generation is proposed based on beating of two spatial-Gaussian lasers in a periodic density plasma, where a transverse component of current is realized that resonantly excites the radiation with efficiency ∼10⁻³. Importance of laser-beam-width, amplitude and periodicity of density structure is discussed for the efficient THz generation.