Improving the Field‐Effect Performance of Bi2S3 Single Nanowires by an Asymmetric Device Fabrication

High‐quality Bi₂S₃ nanowires are synthesized by chemical vapor deposition and their intrinsic photoresponsive and field‐effect characteristics are explored in detail. Among the studied Au–Au, Ag–Ag, and Au–Ag electrode pairs, the device with stepwise band alignment of asymmetric Au–Ag electrodes has the highest mobility. Furthermore, it is shown that light can cause a sevenfold decrease of the on/off ratio. This can be explained by the photoexcited charge carriers that are more beneficial to the increase of I_off than I_on. The photoresponsive properties of the asymmetric Au–Ag electrode devices were also explored, and the results show a photoconductive gain of seven with a rise time of 2.9 s and a decay time of 1.6 s.     

Two‐Dimensional Tellurium Nanosheets Exhibiting an Anomalous Switchable Photoresponse with Thickness Dependence

Two‐dimensional (2D) tellurium (Te) was recently predicted to be promising for diverse electronic and optoelectronic applications. However, the synthesis of high‐quality 2D Te structures remains challenging, which greatly hinders the exploration of its full properties. Herein, an anomalous photoresponse from negative to positive as a function of thickness in Te nanosheets is reported. Ultrathin Te layers with large size and clean interface were obtained through a topotactic transformation, in which the 2D Te structure was derived from a layered MTe₂ (M=Ti, Mo, W) matrix by excessive lithiation. Prominently, the photoresponse in Te nanosheets exhibits negative behavior when the thickness is less than 5 nm, which turns positive as the thickness increases. This unusual photoresponse will shed light on the full exploration of 2D non‐layered materials with exotic properties.     

Benzodithiophene-Fused Perylene Bisimides as Electron Acceptors for Non-Fullerene Organic Solar Cells with High Open-Circuit Voltage

Tandem-junction organic solar cells require solar cells with visible light photo-response as front cells, in which an open-circuit voltage (V_oc) above 1.0 V is highly demanded. In this work, we are able to develop electron acceptors to fabricate non-fullerene organic solar cells (NFOSCs) with a very high V_oc of 1.14 V. This was realized by designing perylene bisimide (PBI)-based conjugated materials fused with benzodithiophene, in which Cl and S atom were introduced into the molecules in order to lower the frontier energy levels. The fused structures can reduce the aggregation of PBI unit and meanwhile maintain a good charge transport property. The new electron acceptors were applied into NFOSCs by using Cl and S substituted conjugated polymers as electron donor, in which an initial power conversion efficiency of 6.63 % and a high V_oc of 1.14 V could be obtained. The results demonstrate that the molecular design by incorporating Cl and S atom into electron acceptors has great potential to realize high performance NFOSCs.     

直流反应磁控溅射法制备二氧化钛薄膜的光响应

采用直流反应磁控溅射的方法在镀有ITO的导电玻璃衬底上沉积了二氧化钛薄膜，分别用拉曼光谱和吸收光谱研究了薄膜的结构，通过光电流研究了二氧化钛薄膜的紫外光响应。在100s的时间内光电流能达到最大值的96％，当停止紫外光照射时，光电流在200s的时间内能恢复到暗电流，二氧化钛薄膜对紫外光的灵敏性和稳定的光响应表明二氧化钛薄膜有可能成为一种新的紫外光探测器材料。     

Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities

Optoelectronic applications require materials both responsive to objective photons and able to transfer carriers, so new two‐dimensional (2D) semiconductors with appropriate band gaps and high mobilities are highly desired. A broad range of band gaps and high mobilities of a 2D semiconductor family, composed of monolayer of Group 15 elements (phosphorene, arsenene, antimonene, bismuthene) is presented. The calculated binding energies and phonon band dispersions of 2D Group 15 allotropes exhibit thermodynamic stability. The energy band gaps of 2D semiconducting Group 15 monolayers cover a wide range from 0.36 to 2.62 eV, which are crucial for broadband photoresponse. Significantly, phosphorene, arsenene, and bismuthene possess carrier mobilities as high as several thousand cm² V^?1 s^?1. Combining such broad band gaps and superior carrier mobilities, 2D Group 15 monolayers are promising candidates for nanoelectronics and optoelectronics.     

Liquid Marble Photosensor

A liquid marble is a liquid droplet coated by a hydrophobic powder. The liquid marble does not wet adjacent surfaces and therefore can be manipulated as a dry soft body. A Belousov-Zhabotinsky (BZ) reaction is an oscillatory chemical reaction exhibiting waves of oxidation. We demonstrate how to make a photo-sensor from BZ medium liquid marbles. We insert electrodes into a liquid marble, prepared from BZ solution and coated with polyethylene powder. The electrodes record a potential difference which oscillates due to oxidation wave-fronts crossing the electrodes. When the BZ marble is illuminated by a light source, the oxidation wave-fronts are hindered and, thus, the electrical potential recorded ceases to oscillate. We characterise several types of responses of BZ marble photosensors to various stimuli, and provide explanations of the recorded activity. BZ liquid marble photosensors may find applications in the fields of liquid electronics, soft robotics and unconventional computing.     

Single‐Crystalline Molybdenum Trioxide Nanoribbons: Photocatalytic,Photoconductive, and Electrochemical Properties

Molecular highways : A facile one‐step, surfactant‐free route was applied to produce high‐purity and uniform α‐MoO₃ nanoribbons (see figure), and their photocatalytic, photoconductive, and electrochemical properties were investigated. The results showed that the as‐prepared products had superior photo and electro properties.

     

Near infrared photodetectors based on sub‐gap absorption in organohalide perovskite single crystals

Organohalide perovskite optoelectronics based upon large (mm‐sized) single crystals present exciting opportunities for new device platforms and fundamental studies. Herein, we report CH₃NH₃PbBr₃ and CH₃NH₃PbI₃ single crystals prepared via an inverse temperature crystallization method with strong near infrared photoresponses significantly below the optical gap. Light intensity dependent photocurrent measurements reveal the photoresponse is not a two‐photon phenomenon, but rather is derived from a linear mechanism. The effect (including responsivity and speed) is enhanced in a photoresistor architecture, indicating that the photoresponse is due to absorption into surface trap states in the crystal. Without any optimisation, respectable NIR responsivities at room temperature of ∼10^‐2 A W⁻¹ at a low 1V bias operating voltage are achieved. These results again demonstrate the remarkable potential of organohalide perovskites as light sensing materials, and the possibilities for engineering a new class of single crystal‐based optoelectronics.

     

Effect of oxygen annealing on the photoresponse of PbSe thin films fabricated by the pulsed laser deposition method

In this work, we have fabricated lead selenide (PbSe) thin films by the pulsed laser deposition method on Si/SiO₂ substrates and investigated the effect of oxygen annealing (sensitization) in these films. The oxygen-sensitized films show high responsivity in the visible (VIS) and the near-infrared (NIR) region at room temperature without cooling. We also demonstrate the effective surface oxidation of PbSe thin films during the oxygen annealing process without treated with commonly used halogens that leads to a better photoresponse in these PbSe films.     

室温下Pr0.7Ca0.3MnO3薄膜的瞬态光响应特性

在室温下利用波长532nm，脉冲宽度7ns的纳秒脉冲激光研究了不同电压和激光能量密度作用下Pr_0.7Ca_0.3MnO₃薄膜的瞬态光响应特性.在激光能量密度为275.16mJ/cm²时，其最大电阻变化率达到92.3%，响应时间约36ns.室温下电压变化对薄膜的光响应特性影响不大，而诱导光能量密度的影响则很明显，能量密度越大，电阻变化越大，响应时间越短，并且电阻变化和响应时间均与激光能量密度呈非线性关系.这种光响应来源于薄膜中的光致非稳态绝缘体-金属相变，有望在新型光电器件上获得应用.