平行排列丝状液晶在超短脉冲激光激励下发生瞬态扭曲形变的最佳偏振角

利用光学相位延迟法，观察到平行排列丝状液晶在超短脉冲激光（10ns）激励下的瞬态扭曲形变.实验结果表明，虽然脉冲激光的电场强度远远大于液晶发生扭曲形变的阈值，但并不能保证液晶会发生瞬态扭曲形变.这主要是因为脉冲激光的激励时间非常短，而液晶分子发生扭曲形变的响应时间相对较长，从而使其来不及形变.分析发现：激励激光的偏振方向与平行排列丝状液晶分子的最佳夹角是45°.利用此条件，观察到掺微量D型苏氨酸卟啉的平行排列丝状液晶在超短脉冲激光激励后具有记忆效应，这在光存储和记忆显示方面有很大的实用价值.     

Photosensitive Structures of Conjugated Polymer - Porous Silicon

The photosensitive hybrid structures poly-3,4-ethylenedioxythiophene (PEDOT)– porous silicon (PS)–n-Si are fabricated. Current-voltage characteristics of the obtained structures are investigated. It is shown that PS surface modification by PEDOT conjugated polymer gives rise to the appearance of a pronounced rectifying effect on the current-voltage characteristics. Spectral characteristics of photoresponse in the 450–1100 nm wavelength range, its temperature dependence in the 125–325 K range, and energy characteristics of the hybrid photovoltaic structures are studied. We propose possible mechanisms of the photoelectric processes in the hybrid structures PEDOT–PS–n-Si.     

Phase and optical behaviours of chiral-azo liquid crystal polymethylsiloxanes with isosorbide units

ABSTRACT

In this study, we synthesised two series of cholesteric liquid crystal polymers CPQ and CPZ series. First, we prepared four different monomers ML₁ containing a cholesteryl group, ML₂ containing a cyano group, ML₃ containing a phenolic hydroxyl group and ML₄ containing isosorbide with azo groups. With the polymethylsiloxanes as the main chain, CPQ series were then synthesised by copolymerisation among the monomers ML₁, ML₂ and ML₃ and CPZ series were synthesised by esterification between the CPQ series and the monomer ML₄. ¹HNMR and FT-IR spectra confirmed the chemical structures of all the monomers and polymers. The mesomorphic behaviours and thermal properties were investigated by TGA, DSC, POM and XRD. Both the CPQ and CPZ series exhibited excellent thermal stability and reversible phase transitions, as well as interesting Grandjean textures under POM. CPZ series showed higher optical activity than CPQ series due to the introduction of the isosorbide group and the azo group, which could tune the pitch to make Bragg selective reflection appear more easily. UV–Vis spectra investigated the photoresponse behaviours of CPZ series thoroughly.     

空穴在动量空间分布对p型量子阱红外探测器响应光谱的影响

通过对p型量子阱红外探测器(QWIP)的自洽计算，得到了量子阱价带的电子结构和器件的光电流谱，并研究了载流子在动量空间分布对p型QWIP光谱响应的影响.计算结果表明，在动量空间不同区域的空穴对器件的光谱响应起着不同作用，从而使得在p型QWIP中，空穴浓度和温度都将影响器件的响应光谱.所得结果合理地解释了实验中器件响应光谱随掺杂浓度和温度的变化. 关键词： p型量子阱红外探测器 响应光谱 空穴浓度 温度     

Anisotropic photoresponse of layered rhenium disulfide synaptic transistors

Layered ReS₂ with direct bandgap and strong in-plane anisotropy shows great potential to develop high-performance angle-resolved photodetectors and optoelectronic devices. However, systematic characterizations of the angle-dependent photoresponse of ReS₂ are still very limited. Here, we studied the anisotropic photoresponse of layered ReS₂ phototransistors in depth. Angel-resolved Raman spectrum and field-effect mobility are tested to confirm the inconsistency between its electrical and optical anisotropies, which are along 120° and 90°, respectively. We further measured the angle-resolved photoresponse of a ReS₂ transistor with 6 diagonally paired electrodes. The maximum photoresponsivity exceeds 0.515 A·W^-1 along b-axis, which is around 3.8 times larger than that along the direction perpendicular to b axis, which is consistent with the optical anisotropic directions. The incident wavelength- and power-dependent photoresponse measurement along two anisotropic axes further demonstrates that b axis has stronger light-ReS₂ interaction, which explains the anisotropic photoresponse. We also observed angle-dependent photoresistive switching behavior of the ReS₂ transistor, which leads to the formation of angle-resolved phototransistor memory. It has simplified structure to create dynamic optoelectronic resistive random access memory controlled spatially through polarized light. This capability has great potential for real-time pattern recognition and photoconfiguration of artificial neural networks (ANN) in a wide spectral range of sensitivity provided by polarized light.     

ZnO/Ag/ZnO多层结构薄膜的光电性质

通过磁控溅射方法生长了不同银层厚度的ZnO/Ag/ZnO多层结构的薄膜,并对其形貌、光吸收谱、光致发光和光响应特性进行了比较研究.结果表明ZnO薄膜中银薄层的加入使得光致发光的强度增强.银层厚度为6 nm样品制成的器件在350 nm处的光响应度为0.06 A/W,相对于ZnO薄膜提高了一个数量级.而当银层厚度达到15 ...     

Optical Response of Granular YBCO Weak Link

1.IntroductionRecently,thcrehasbecnintcrcstinthephot0resp0nse0fhigh-7'.oxidcsuperconductingfilms,espcciallywithregardtdthedctailsofthephysics0ftheph0toresponse['~'J.Fr0mtheviewpointoftheapplicationinthesuperconductingclectr0nics,thecharacteristicsofphotore-sponcse0fJosephsonjuncti0nfabricated\viththcsehigh-T.0xidcsupercondictorsandthepho-toinducedn0ncquilibriumproPerties0fthesematerialsmustbecxaminedandeva1uatcdforthedeve1opmcntofnQveIsL1pcrc0n(luctingdcviccsandJ0scphsoncbnjuncti0n.Itisf0un…     

Poly(3‐hexylthiophene)/Gold Nanoparticle Hybrid System with an Enhanced Photoresponse for Light‐Controlled Electronic Devices

Light‐controlled electrical behavior of polymer/nanoparticle hybrid system in ambient condition is demonstrated. By embedding gold nanoparticles (Au NPs) in a poly(3‐hexylthiophene) (P3HT) matrix, the photoresponses of the nanocomposite films are enhanced. The electrical behavior of the P3HT/Au NPs nanocomposite transistors and inverters are tuned over a wide range in depletion mode. UV‐visible absorption spectroscopy, ultraviolet photoelectron spectroscopy (UPS), and steady‐state photoluminescence (PL) spectroscopy are used to analyze the nanocomposite films. The findings provide a better understanding of light‐induced threshold voltage shifts of P3HT‐based field‐effect transistors and inverters and demonstrate their potential applications in electronic signal modulation for solution‐processed integrated circuits.