Trap induced slow photoresponse of single CdS nanoribbons

Wurtzite CdS nanoribbons are prepared by using a simple thermal evaporation method. Electron microscopy shows that the ribbons are smooth in surface and uniform in size. Besides the intrinsic emission, the photoluminescence spectrum of a CdS nanoribbon shows a peak at about 580 nm, which may arise from the defect- and the trap- related transitions. The photoresponse of single CdS nanoribbons is researched. When these nanoribbons are exposed to a laser with a wavelength of 400 nm, their conductivity is enhanced greatly. The conductivity of CdS nanoribbons cannot be restored to a value without any illumination even at 5 minutes after the illumination. A model is proposed to explain this phenomenon, which may be due to a slow photoresponse induced by the trap.     

Analysis of optoelectronic properties of TiO_2 nanowiers/Si heterojunction arrays

The optoelectronic properties of n-TiO2NW/p-Si heterojunction fabricated by depositing TiO2 nanowires on a p-Si substrate are studied. Under excitation at a wavelength of 370 nm, the TiO2 nanowires produce a light emission at 435 nm due to the emission of free excitons. The I-V characteristics are measured to investigate the heterojunction effects under the dark environment and ultraviolet （UV） illumination, n-TiOzNW/p-Si has a p-n junction formed in the n-TiOz/p-Si beterojunction. TiO2NW/Si photodiode produces a pbotocurrent larger than dark current under UV illumination. It is observed that UV photons are absorbed in TiO2 and the heterojunction shows a 0.034-A/W responsivity at 4-V reverse bias.     

纳米多孔氮化铌薄膜红外宽带光响应特性

具有超导绝缘相变特性的纳米多孔超导薄膜在红外光电探测领域有着潜在的应用价值,而其在红外波段的宽带光响应特性研究目前尚未见报道.为此,本文以纳米多孔氮化铌(NbN)薄膜为主要对象,研究了其在780—5000nm的近、中红外波长范围内的光响应特性.首先,采用Drude模型拟合的方法,不仅将对实验数据拟合的精度提高了约17%,而且得到了中红外波段的NbN光学参数;进而,采用时域有限差分法分析了加载纳米多孔NbN薄膜的背面对光器件的光响应特性,并给出了能够将纳米多孔薄膜简化为均匀薄膜的Bruggeman等效模型,从而可以将纳米多孔NbN薄膜光响应特性的仿真维度由三维降为一维;最后,基于等效模型和传输矩阵法,对加载纳米多孔NbN薄膜的背面对光器件在近、中红外波段内的光吸收特性进行了优化设计.结果表明:一方面,使用Bruggeman等效模型简化设计过程并不会影响最终结果的正确性;另一方面,仅仅是加载较为简单的光学腔,即可使得探测器的薄膜光吸收率在近、中红外宽带设计时均大于82%,在近红外双波长设计时均大于93.7%,并且多孔薄膜结构具有天然的极化不敏感特性.     

Characteristics of Al / p‐AgGaTe2 polycrystalline thin film Schottky barrier diode

An Al/p‐AgGaTe₂ polycrystalline thin film schottky barrier diode have been prepared by flash‐evaporation of p‐AgGaTe₂ onto a pre‐deposited film of aluminium. The current‐voltage, capacitance‐voltage and photoresponse of the diode have been investigated. The important physical parameter such as barrier height of the fabricated diode was derived from these measurements. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

光响应Janus粒子体系的构建与应用

Janus粒子通常由两种或两种以上不同物理或化学性质的部分组成,其结构的不对称性导致了粒子形貌和性质具有不对称性。与“静态”Janus粒子相比,具有刺激响应性的“动态”Janus粒子能够与环境发生相互作用,在外界刺激下表达特殊功能。光响应Janus粒子是一类可以在光刺激下发生特定响应的Janus粒子,其两侧不同的组成不仅可以结合多种类型的光响应性,也能与其他类型的刺激响应进行配合,从而实现对特定体系的精确调控。由于光能易于调节的特性,光响应Janus粒子可以与无机纳米团簇或有机官能团产生特定反应,具有光热效应、色彩调节、光动力治疗等独特特性。它们还可以应用于药物递送、生物传感与成像、微纳米马达和光致发光等领域,为解决生物医学和光学器件相关的问题提供了新的方法。本文主要介绍光响应Janus粒子近期发展的制备方法,并着重阐述其独特调控机理以及其在生物医药、发光材料等领域的突出应用,最后对目前该领域的发展前景做出展望。     

氧化锌碳纤维复合结构制备及其紫外光响应性能研究

利用预处理的碳纤维为模板,在其表面磁控溅射氧化锌种子层,再通过水热法生长出氧化锌纳米棒,形成刷子状复合结构。轴心的碳纤维增强了材料的导电性能,同时该结构又具有较高的比表面积。将单根氧化锌/碳纤维转移到间距为180μm的金叉指电极上构建紫外光探测器,在325 nm激光照射下,该器件显示出约200倍的光电流增益,且具有良好的稳定性和光谱选择性。文中同时对响应机理进行了讨论。     

Photoelectric properties of nInSb-nPbTe-nCdTe isotype structure prepared by vacuum pulsed-laser deposition technique

With use of the vacuum pulsed-laser deposition technique an isotype nInSb-nPbTe-nCdTe structure is fabricated. Spectral dependence of photoresponse of the obtained structure is studied at the temperature 120 K. In the curve of spectral dependence a change in the sign of photoresponse is observed for both zero bias and external voltage. Qualitative explanation of this phenomenon is given.     

Photoresponsive Molecular Memory Films Composed of Sequentially Assembled Heterolayers Containing Ruthenium Complexes

Photoresponsive molecular memory films were fabricated by a layer‐by‐layer (LbL) assembling of two dinuclear Ru complexes with tetrapodal phosphonate anchors, containing either 2,3,5,6‐tetra(2‐pyridyl)pyrazine or 1,2,4,5‐tetra(2‐pyridyl)benzene as a bridging ligand (Ru‐NP and Ru‐CP, respectively), using zirconium phosphonate to link the layers. Various types of multilayer homo‐ and heterostructures were constructed. In the multilayer heterofilms such as ITO||(Ru‐NP)_m|(Ru‐CP)_n, the difference in redox potentials between Ru‐NP and Ru‐CP layers was approximately 0.7 V, which induced a potential gradient determined by the sequence of the layers. In the ITO||(Ru‐NP)_m|(Ru‐CP)_n multilayer heterofilms, the direct electron transfer (ET) from the outer Ru‐CP layers to the ITO were observed to be blocked for m>2, and charge trapping in the outer Ru‐CP layers became evident from the appearance of an intervalence charge transfer (IVCT) band at 1140 nm from the formation of the mixed‐valent state of Ru‐CP units, resulting from the reductive ET mediation of the inner Ru‐NP layers. Therefore, the charging/discharging (“1”and “0”) states in the outer Ru‐CP layers could be addressed and interconverted by applying potential pulses between ?0.5 and +0.7 V. The two states could be read out by the direction of the photocurrent (anodic or cathodic). The molecular heterolayer films thus represent a typical example of a photoresponsive memory device; that is, the writing process may be achieved by the applied potential (?0.5 or +0.7 V), while the readout process is achieved by measuring the direction of the photocurrent (anodic or cathodic). Sequence‐sensitive multilayer heterofilms, using redox‐active complexes as building blocks, thus demonstrate great potential for the design of molecular functional devices.     

Molecular Junctions Composed of Oligothiophene Dithiol‐Bridged Gold Nanoparticles Exhibiting Photoresponsive Properties

Three oligothiophene dithiols with different numbers of thiophene rings (3, 6 or 9) have been synthesized and characterized. The X‐ray single crystal structures of terthiophene 2 and sexithiophene 5 are reported herein to show the exact molecular lengths, and to explain the difference between their UV‐visible spectra arising from the different packing modes. These dithiols with different chain lengths were then treated with 2‐dodecanethiol‐protected active gold nanoparticles (Au‐NPs) by means of in situ thiol‐to‐thiol ligand exchange in the presence of 1 μm gap Au electrodes. Thus the molecular junctions composed of self‐assembled films were prepared, in which oligothiophene dithiol‐bridged Au‐NPs were attached to two electrodes by means of Au? S bonded contacts. The morphologies and current–voltage (I–V) characteristics of these films were studied by SEM and AFM approaches, which suggested that the thickness of the films (3–4 layers) varied within the size of one isolated Au‐NP and typical distance‐dependent semiconductor properties could be observed. Temperature dependent I–V measurements for these molecular junctions were performed in which the films served as active elements in the temperature range 6–300 K; classical Arrhenius plots and subsequent linear fits were carried out to give the activation energies (ΔE) of devices. Furthermore, preliminary studies on the photoresponsive properties of these devices were explored at 80, 160, and 300 K, respectively. Physical and photochemical mechanisms were used to explain the possible photocurrent generation processes. To the best of our knowledge, this is the first report in which oligothiophene dithiols act as bridging units to link Au‐NPs, and also the first report about functionalized Au‐NPs exhibiting photoresponse properties in the solid state.