Light Emitting Diodes Fabricated from Liquid Phase Epitaxial InAs/InAsxP1‐x‐ySby/InAsx'P1‐x'‐y'Sby' and InAs/InAs1‐xSbx Multi‐Layers

Mid‐infrared light emitting diodes (LED) in 3‐5μm wavelength range have been fabricated from InAs/InAs_xP_1‐x‐ySb_y/InAs_x'P_1‐x'‐y'Sb_y' composition graded layer and InAs/InAsSb multilayers. The heterostructures were grown by liquid phase epitaxy (LPE) between 600 and 520°C. An output power of 3.1 mW at 11K and of 10 μW at 300 K have been obtained under a peak current of 100 mA (50 % duty ratio) from InAsSb multilayers. Recombination mechanisms for these diodes were studied by temperature‐dependent emission spectra using Fourier transform infrared (FTIR) measurement system with double modulation. The output powers of the LEDs decrease rapidly at temperatures above 153 K suggesting that nonradiative and Auger recombinations are the main limitation of the device performance at high temperatures.