大电流两电极气体开关研究

 由于引燃管难以满足现在能源系统对放电开关承受大电流的要求,因此研制了大电荷转移量两电极气体开关。这种新型气体开关电极间距可调,无触发极,采用同轴结构,并将主电极置于金属腔体内,减少了放电对绝缘支撑的污染。主电极为铜钨合金材料,设计为平顶圆柱状,以提高烧蚀均匀度和热传导效率,减少电极材料喷溅,延长其寿命。绝缘支撑采用碗状结构,提高了机械强度,增加了沿面击穿距离。该开关工作电压达25 kV,放电电流超过100 kA（脉冲宽度600 μs）,单次脉冲电荷转移量达50 C。实验结果显示该气体开关触发性能稳定,电极表面烧蚀均匀,多次大电流实验后电极表面保持完好,可应用于强激光能源系统。     

LaB6在低压强氮气和氦气中的放电特性

 研究了LaB₆在1~10 Pa氮气和氦气中的直流和脉冲放电特性以及放电过程对电极的影响。结果表明，电极直径为5 mm的LaB6氦气放电管在脉冲工作状态下可以长期稳定放电。在脉冲电压为2.2 kV、脉冲宽度10 ms、频率13.3 Hz下，脉冲峰值放电电流超过120 A。氦气放电管在放电过程中，阴极表面有离子的清洗和活化作用，可以使电极的表面逸出功降低，提高放电管的发射能力和稳定性。LaB₆作为气体放电电极具有寿命长、延迟时间短、放电电流大等优点，可用于重复强流脉冲气体放电的高压高速开关器件。     

基于单端半导体光放大器的可调谐超短光脉冲源理论与实验研究

超短光脉冲源是光时分复用(OTDM)系统中的关键器件.提出了一种基于单端半导体光放大器(SOA)的注入型主动锁模光纤激光器产生超短光脉冲的方案，建立了该方案的理论模型.实验实现了高消光比稳定的重复频率10—40GHz皮秒级光脉冲的输出，输出波长在30nm范围内连续可调. 关键词： 超短光脉冲 单端半导体光放大器 主动锁模     

非晶态硒化镉薄膜瞬态光电特性

本文报道用真空热蒸发法淀积的非晶态硒化镉薄膜作光敏介质制备超快光电导探测器。用对撞脉冲锁模Nd:YAG激光器产生的超短光脉冲序列对探测器的响应时间进行检测,结果表明a-CdSe薄膜对皮秒(10^-12秒)级的超短光脉冲作用具有良好的瞬态响应光电特性,探讨a-CdSe薄膜快速弛豫过程的内在机理。     

1.5MeV LIA脉冲功率系统

本文简要介绍了1.5MeV LIA脉冲功率系统的结构、组成和设计思想;给出了开关运行参数和确定开关时间抖动指标的方法、闭环系统的总抖动对加速电压相对变化的影响、脉冲功率系统各段输出波形和电压幅度的调制关系;测量结果表明,1.5MeV LIA的运行功率和时间同步满足总体设计要求。     

Switching and Swapping of Quantum Information: Entropy and Entanglement Level

Information switching and swapping seem to be fundamental elements of quantum communication protocols. Another crucial issue is the presence of entanglement and its level in inspected quantum systems. In this article, a formal definition of the operation of the swapping local quantum information and its existence proof, together with some elementary properties analysed through the prism of the concept of the entropy, are presented. As an example of the local information swapping usage, we demonstrate a certain realisation of the quantum switch. Entanglement levels, during the work of the switch, are calculated with the Negativity measure and a separability criterion based on the von Neumann entropy, spectral decomposition and Schmidt decomposition. Results of numerical experiments, during which the entanglement levels are estimated for systems under consideration with and without distortions, are presented. The noise is generated by the Dzyaloshinskii-Moriya interaction and the intrinsic decoherence is modelled by the Milburn equation. This work contains a switch realisation in a circuit form—built out of elementary quantum gates, and a scheme of the circuit which estimates levels of entanglement during the switch’s operating.     

Passivation of aluminium–n+ silicon contacts for solar cells by ultrathin Al2O3 and SiO2 dielectric layers

Ultra‐thin thermally grown SiO₂ and atomic‐layer‐deposited (ALD) Al₂O₃ films are trialled as passivating dielectrics for metal–insulator–semiconductor (MIS) type contacts on top of phosphorus diffused regions applicable to high efficiency silicon solar cells. An investigation of the optimum insulator thickness in terms of contact recombination factor J_{0_cont} and contact resistivity ρ_c is undertaken on 85 Ω/□ and 103 Ω/□ diffusions. An optimum ALD Al₂O₃ thickness of ～22 Å produces a J_{0_cont} of ～300 fAcm^–2 whilst maintaining a ρ_c lower than 1 mΩ cm² for the 103 Ω/□ diffusion. This has the potential to improve the open‐circuit voltage by a maximum 15 mV. The thermally grown SiO₂ fails to achieve equivalently low J_{0_cont} values but exhibits greater thermal stability, resulting in slight improvements in ρ_c when annealed for 10 minutes at 300 °C without significant changes in J_{0_cont}. The after‐anneal J_{0_cont} reaches ～600 fAcm^–2 with a ρ_c of ～2.5 mΩ cm² for the 85 Ω/□ diffusion amounting to a maximum gain in open‐circuit voltage of 6 mV. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Anisotropic charge transport in flavonoids as organic semiconductors

A quantum mechanical approach has been used to investigate on the potential for using two naturally occurring flavonoids: quercetin and luteolin as candidates for organic semiconductor. Selection of flavonoids enables to evaluate the effects of hydroxyl group structural features. The relationship between molecular packing and charge transport in flavonoids is presented. The calculated results indicate that quercetin should be an ideal candidate as high-performance p-type organic semiconductor material, while luteolin is predicted as n-type organic semiconductor material. The predicted maximum electron mobility value of quercetin is 0.075 cm² V^?1 s^?1, which appears at the orientation angle near 91°/271° of conducting channel on the reference planes b–c. Theoretical investigation of natural semiconductors is helpful for designing higher performance electronic materials used in biochemical and industrial field to replace expensive and rare organic materials.     

Structural investigation of the zincblende-β tin transition for gasb by in situ X-ray absorption spectroscopy

Abstract

The transition to the β tin structure has been observed by X-ray absorption spectroscopy for GaSb at 7.9 GPa. In the low pressure phase, the bulk modulus has been determined. In the high pressure phase, the results for the Ga-Sb and Ga-Ga distances are in good agreement with previous x-ray diffraction data. The pseudo Debye-Waller factor associated to the Ga-Sb distance is abnormally high, indicating that disorder exists for this bond.