半导体激光自混合干涉类锯齿波成立条件

本文从激光系统稳态条件出发,建立了具有普遍意义的半导体激光自混合干涉系统模型,通过仿真分析,结果表明：在较强光反馈水平时,自混合干涉信号并非都是类锯齿波形。波形形状受光反馈水平及激光器线宽展宽因数的共同制约。本文结果对激光自混合干涉技术的应用具有重要的指导意义。     

通过半波整流二极管中的电流问题

考虑到半波整流电容滤波电路的特点,仔细地分析了这种电路整流滤波后的电流波形,并提出了这种电路瞬时电流最大值的计算公式。     

分子筛组装单质半导体碲的拉曼光谱

无机介孔材料MCM41是高有序,直孔道介孔分子筛,具有孔径约4nm的一维均匀孔道,孔壁厚约1nm,介孔体积可达40%,是一种很理想的组装材料主体。半导体碲位于第Ⅵ族,其六方相的晶格排列呈螺旋链状结构。本文采用固相合成反应方法,将单质半导体碲成功地组装在MCM41介孔分子筛中。在组装体中,单质半导体碲保持着六方相的晶体结构,其拉曼晶体振动表现出纳米晶体的结构特征。真空热处理实验表明,组装体具有良好的热稳定性。Te的六方相和所具有的独特的螺旋链状结构使Te分子很容易进入MCM41的直孔道内,同时MCM41均匀而规则的直孔道限制了Te螺旋链的随机排列,因而被组装在直孔道内的Te能螺旋链式生长,形成一维半导体纳米晶体,排列均匀,尺寸单一,具有稳定的空间构型     

The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes

Light-emitting diodes (LEDs) with a Mg-doped p-type Ga_1−xIn_xN (0 ≤ x ≤ 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga_1−xIn_xN spacer layer is well-controlled by lowering the growth temperature and by using a suitable In composition and Mg doping concentration. All LED samples with the p-type spacer layer show a smaller efficiency droop compared to a reference LED having an undoped GaN spacer. Among the sample sets investigated, an optical power enhancement of 12% at 111 A/cm² is obtained when inserting a 5 nm-thick p-type Ga_0.97In_0.03N spacer layer. The results support that carrier transport is the key factor in the efficiency droop observed in GaN-based LEDs.     

MSM结构GaAs探测器的抗辐照性能

研究一种双金属接触的GaAs半导体探测器在14MeV中子辐照下的性能.测量了探测器经过10¹²n/cm²中子辐照剂量后的反向漏电流、电荷收集效率和最小电离粒子能谱,并且与⁶⁰Co 1.25MeV光子辐照的测量结果相比较.对中子辐照引起探测器时间性能变化和辐照损伤机制进行了探讨.并根据实验结果提出了这种双金属接触GaAs探测器灵敏层分布的一种假设,理论计算和实验数据相符合.     

二极管失效和烧毁阈值与电磁波参数关系

 利用半导体PN结器件一维模拟程序mPND1D,计算了二极管在不同电磁脉冲电压源条件下的失效和烧毁时器件吸收的能量,并对结果作了初步分析。     

融断开关等离子体中磁场的异常渗透

简单地介绍了柱坐标粒子模拟算法及实现 ,利用粒子模拟方法对等离子体融断开关导通过程中的磁场渗透问题进行了模拟计算 ,针对不同的模拟条件出现的模拟结果进行了理论分析 ,给出了合理的物理解释。     

用伏安法测绘二极管伏安特性的研究

本提出用伏安法测绘二极管伏安特性曲线的一种电路新接法,用该接法测量时,不需修正即可完全消除电表内阻的影响。     

Astigmatism of the radiation of semiconductor stripe-geometry lasers

The effect of injection current on the intensity and angular distribution of radiation in TE- and TM-polarized modes of diode lasers with a stripe geometry and double GaAs-AlGaAs-based heterostructure is investigated. The analysis of the angular distribution of radiation revealed the nonmonotonic behavior of its astigmatism with increase in the current. The coefficient of astigmatism in the mode of lasing is substantially higher for the TE-mode than for the TM-mode. An increase in radiation astigmatism is accompanied by a decrease in the differential effectiveness and polarization degree. These specific features are explained by the interaction of the defocusing action of distribution of the refractive index n(x) in the plane of the p-n-transition with a minimum under the center of the stripe contract (at x=0) with the focusing action of the gain coefficient distribution. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 4, pp. 461–464, July–August, 2000.     

A GaAs–InGaAs optoelectronic switch with multiple operation states

An optoelectronic switch with both n- and p-type delta-doped (-doped) quantum wells was investigated. The -doped structures formed potential wells for the carrier accumulation and potential barriers for the carrier injection. Being possessed of -doped sheets with different doping levels, the potential barriers were sequentially collapsed to produce a double negative-differential-resistance (NDR) phenomenon in the current–voltage (I–V) characteristics of the device, due to the carrier accumulation in the potential wells. The device also showed an optical function related to the barrier heights controllable by incident light.