不同温度下砷化镓表面摩擦诱导选择性刻蚀特性研究

利用摩擦诱导选择性刻蚀的方法,可在砷化镓表面加工一系列的纳米结构;该纳米加工方法无需掩膜,且加工效率高、成本低,具有应用前景.为了进一步研究砷化镓表面摩擦诱导选择性刻蚀的特性,优化加工参数,本文作者在不同温度下利用H_2SO_4-H_2O_2溶液对砷化镓表面进行选择性刻蚀,考察了刻蚀后所形成的凸起高度及砷化镓表面粗糙度随刻蚀时间和刻蚀温度的变化规律,阐释了温度对砷化镓表面刻蚀的影响机制;最后从加工高度和表面粗糙度着眼,探讨了砷化镓表面摩擦诱导选择性刻蚀的最佳条件.本研究为砷化镓表面选择性刻蚀加工的条件优化提供了重要依据.     

动车组车轮轮缘塑性变形白层组织分析

本文作者对动车组ER8C车轮轮缘白层的微观组织进行了观察,重点对由于剧烈塑性变形而形成的白层进行了分析和探讨.在光镜下可以观察到白层厚为3~18μm,分布不连续.在扫描电镜下,塑性变形白层主要有两种类型:一种为经塑性变形作用而细化的组织和经动态再结晶作用得到的铁素体纳米晶,后者具有纳米量级的铁素体晶粒.白层内的碳化物数量与塑性变形程度及运行过程中的温升有关,越接近表层未溶碳化物越少、晶粒越小.白层形成机制主要分为两种:一种为反复塑性变形作用的机制,导致铁素体破碎细化同时伴随碳化物碎化溶解;另一种为变形与一定温升综合作用的机制,表层发生动态再结晶而形成超细晶粒组织并伴随碳化物溶解,后者在超细晶粒形成中起主导作用.     

SiO2/SiNx:H选择性刻蚀改善光诱导化学镀/电镀多晶硅太阳能电池过镀现象

自对准的光诱导化学镀/电镀技术以其栅线宽度小、工艺快捷高效等优点, 成为制备选择性发射极太阳能电池的理想选择. 然而, 该技术的前序需要HF溶液有效去除重掺杂区表面SiO₂的同时, 避免在SiNx:H掩模上刻蚀出微孔而露出衬底的硅, 否则金属镍和银会在光诱导化学镀/电镀工艺中沉积在微孔中, 导致过镀现象. 这就要求预处理溶液对SiO₂/SiNx:H有很高的选择性刻蚀. 本工作根据实验结果分析了产生过镀现象的原因, 研究了进行SiO₂/SiNx:H选择性刻蚀的可行性. 依据HF刻蚀SiO₂和SiNx:H的机理, 通过调节HF缓释溶液的pH值, 改善了多晶硅太阳能电池的过镀现象.     

新型玻璃刻蚀用光刻胶的研制

采用环氧树脂改性超支化聚酯制备了玻璃刻蚀用的光刻胶掩膜,研究了该感光树脂的感光活性、耐刻蚀性,以及加入HCI、HNO_3后刻蚀对玻璃刻蚀的影响。结果表明,所得感光树脂对玻璃有较好的附着力,厚度为40～50μm的胶膜在ω(HF)为40％的溶液中抗浮胶时间超过6 min,光刻胶初始曝光时间T_0为2．7 s,反差值γ_(gel)为2．8;混合刻蚀剂对载玻片玻璃的刻蚀速度≥35μm/min;以该光刻胶为单层掩膜,可得到线宽50μm的清晰刻蚀图样,玻璃的刻蚀深度超过38μm。     

三维弹性问题无网格分析的奇异杂交边界点方法

提出了一种求解三维线弹性问题的奇异杂交边界点方法．将修正变分原理与移动最小二乘法结合起来,利用了前者的降维优势和后者的无网格特性．使用刚体位移法处理方法中的强奇异积分,提出了一种自适应的积分方案,解决了原有的杂交边界点方法中存在的“边界层效应”．在该方法中,将基本解的源点直接布在边界上,避免了在正则化杂交边界点法中不确定参数的选取．三维弹性力学问题算例体现了这些特点．结果表明该方法与已知的精确解符合较好,同时研究了影响该方法精度的一些参数．     

Impact of electron irradiation on particle track etching response in polyallyl diglycol carbonate (PADC)

In the present work, attempts have been made to investigate the modification in particle track etching response of polyallyl diglycol carbonate (PADC) due to impact of 2 MeV electrons. PADC samples pre-irradiated to 1, 10, 20, 40, 60, 80 and 100 Mrad doses of 2 MeV electrons were further exposed to 140 MeV²⁸ Si beam and dose-dependent track registration properties of PADC have been studied. Etch-rate values of the PADC irradiated to 100 Mrad dose electron was found to increase by nearly 4 times that of pristine PADC. The electron irradiation has promoted chain scissioning in PADC, thereby converting the polymer into an easily etchable polymer. Moreover, the etching response and the detection efficiency were found to improve by electron irradiation. Scanning electron microscopy of etched samples further revealed the surface damage in these irradiated PADCs.     

Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array

In this paper we focused on the mask technology of inductively coupled plasma(ICP) etching for the mesa fabrication of infrared focal plane arrays(FPA).By using the SiO_2 mask,the mesa has higher graphics transfer accuracy and creates less micro-ripples in sidewalls.Comparing the IV characterization of detectors by using two different masks,the detector using the SiO_2 hard mask has the R_0A of 9.7×10~6 Ω·cm~2,while the detector using the photoresist mask has the R_0A of3.2 × 10~2 Ω·cm~2 in 77 K.After that we focused on the method of removing the remaining SiO_2 after mesa etching.The dry ICP etching and chemical buffer oxide etcher(BOE) based on HF and NH4 F are used in this part.Detectors using BOE only have closer R_0A to that using the combining method,but it leads to gaps on mesas because of the corrosion on AlSb layer by BOE.We finally choose the combining method and fabricated the 640×512 FPA.The FPA with cutoff wavelength of 4.8 μm has the average R_0A of 6.13 × 10~9 Ω·cm~2 and the average detectivity of 4.51 × 10~9 cm·Hz~(1/2).W~(-1)at 77 K.The FPA has good uniformity with the bad dots rate of 1.21%and the noise equivalent temperature difference(NEDT) of 22.9 mK operating at 77 K.     

Improvement of laser damage thresholds of fused silica by ultrasonic-assisted hydrofluoric acid etching

Polished fused silica samples were etched for different durations by using hydrofluoric(HF) acid solution with HF concentrations in an ultrasonic field. Surface and subsurface polishing residues and molecular structure parameters before and after the etching process were characterized by using a fluorescence microscope and infrared(IR) spectrometer, respectively. The laser induced damage thresholds(LIDTs) of the samples were measured by using pulsed nanosecond laser with wavelength of 355 nm. The results showed that surface and subsurface polishing residues can be effectively reduced by the acid etching process, and the LIDTs of fused silica are significantly improved. The etching effects increased with the increase of the HF concentration from 5 wt.% to 40 wt.%. The amount of polishing residues decreased with the increase of the etching duration and then kept stable. Simultaneously, with the increase of the etching time, the mechanical strength and molecular structure were improved.     

ICP-MS法测钪的干扰研究及选冶尾矿中钪的直接测定

白云鄂博矿经选铁后,尾矿中钪含量可达0.05%,具有很高的开发利用价值。建立了一种操作简便、灵敏度高并能够准确测定尾矿及富铌渣中微量钪的电感耦合等离子体质谱(ICP-MS)测定方法。对仪器参数、试样处理方法、共存元素的干扰和消除方法进行了系统研究,选用铯、铊和铑作为内标元素,对非谱干扰加以校正。对质谱干扰研究表明,尾矿中的硼、硅、钙、锆和铝均可能对钪的测定造成质谱干扰,其中硼浓度较低(<100 μg·mL-1)时,对钪测定没有明显干扰,在测定条件下铝和钙的干扰较小,可以忽略。锆和硅的质谱干扰较严重,其中锆的干扰为双电荷(90Zr++)干扰,由于双电荷离子电离产率一般不高,锆含量低时干扰可忽略,锆的含量较高时,采用公式c′=0.021c_(Zr)-0.55对结果加以校正。硅的干扰为氧化物干扰,而硅氧键解离能大,硅的氧化物(28Si17O+,29Si16O+)稳定性高,且相关同位素丰度较大,在测定条件下干扰较严重,可以采用式c″=0.013c_(Si)+0.019扣除该影响。选择了四种不同的样品处理方式,结果表明采用HCl+HF+H₂SO₄混酸方法处理,标样测定结果与标准值一致,且能有效的克服硅和硼的质谱干扰,同时降低了测定液的含盐量,减小了非质谱干扰,标样回收率在97%~99%之间。标准样品及实际样品测定表明,采用ICP-MS法直接测定白云鄂博选冶尾矿中钪含量,结果准确,相对标准偏差小于5%,方法测定下限为0.000 1%。     

金属辅助化学刻蚀法制备硅纳米线及应用

金属辅助化学刻蚀是近些年发展起来的一种各向异性湿法刻蚀,利用该方法可以制备出高长径比的半导体一维纳米结构。 本文综述了金属辅助化学刻蚀法可控制备硅纳米线的最新进展,简要概述了刻蚀的基本过程与机制,重点阐述了基于不同模板的金属辅助化学刻蚀可控制备高度有序、高长径比的硅纳米线阵列的具体流程与工艺,并介绍了其在锂离子电池、太阳能电池、气体传感检测和仿生超疏水等方面的潜在应用,探讨了目前存在的问题及其今后的研究发展方向。