多孔硅制备的二维光子晶体生长过程监控

采用单槽电化学腐蚀法在预置有倒金字塔结构的n型单晶硅上制备用于二维光子晶体的多孔硅。利用基于LabVIEW的虚拟仪器技术对实验仪器编程,搭建实时测控系统,实现对反应过程中所需电源的控制,并且实时显示采集到的随时间变化的电压和电流信号,将采集的数据存储在计算机里。实验表明,恒电流供电模式下致使电压剧烈变动,导致多孔硅侧向...     

Porous silicon layers prepared by electrochemical etching for application in silicon thin film solar cells

In this paper, multilayer structures of porous silicon were fabricated by using electrochemical etching and characterized for its optical properties and surface morphology. Samples of monolayer of porous silicon were grown to study the characteristics of porous layer formation with respect to applied current density, etching time and hydrofluoric acid concentrations. Photoluminescence peaks of red emission at wavelength 695 and 650 nm were observed from multilayer porous silicon structures. By atomic force microscopy measurement, hillocks like surface were clearly observed within the host material, which confirmed the formation of pores.     

ZnS衬底表面亚波长增透结构的设计及制备

ZnS是长波红外窗口优选材料之一,而其表面反射率较高;为了减小表面反射,利用耦合波理论,对ZnS衬底表面的亚波长结构参数进行优化设计,得到了具有良好增透效果的最佳亚波长结构参数;并利用掩膜光刻、反应离子刻蚀技术在ZnS衬底表面制备出在8—12 μm波段范围内有明显增透效果的二维亚波长结构,这为ZnS衬底的增透提供了一种新的方法. 关键词： 耦合波理论 表面亚波长增透结构 反应离子刻蚀 硫化锌     

角分辨光电子能谱光束线1200line/mm光栅研制

国家同步辐射实验室新建了覆盖5～40 eV的低能区高分辨率角分辨光电子能谱光束线.其球面光栅单色仪包含了三块光栅,即300,600和1200 line/mm球面层式(Laminar)光栅.采用全息离子束刻蚀工艺,在硅光栅基片上成功地刻蚀出1200 line/mm、占空比0.35、槽深35 nm、有效刻划面积大于120 ...     

Improvement in magnetic properties of La substituted BaFe12O19 particles prepared with an unusually low Fe/Ba molar ratio

In this study, effect of lanthanum substitution on the phase composition, lattice parameters and magnetic properties of barium hexaferrite has been studied in samples synthesized in ammonium nitrate melt. Samples, prepared with different lanthanum amount and having various initial Fe/(Ba+La) ratios in between 12 and 2 {(Ba_1−xLa_x)·n Fe₂O₃, where 0≤x≤1 and 1≤n≤6)}, are sintered at temperatures from 800 to 1200 °C. The lattice parameters, both a and c, decreases with increasing La amount which results in a decrease of the unit cell volume. The scanning electron microscope micrographs show that the pure and La-substituted sample with x=0.3, both calcinated at 1000 °C, have grain sizes smaller than 1 μm. The coercivities of the La-substituted samples increase with increasing La amount and reaches to a maximum value of 5.73 kOe, when x=0.3. Sintering at higher temperatures (above 1000 °C) decreases the coercivity, resembling a transition from single to multi-domain behavior of the particles, while saturation magnetization of the samples continues to increase due to the increasing grain size. Magnetization measurements of the samples prepared with different Fe/(Ba+La) molar ratios, n's, revealed that the specific saturation magnetization slightly increases with decreasing n, while coercivities fluctuates around 5.5 kOe. However, a sharp increase in the saturation magnetization has been observed in the sample having n=1 and washed in HCl. It was measured as 59.2 emu/g at 15 kOe, which is higher than that of the pure sample (57.5 emu/g). Thus, the magnetic parameters are optimized in the sample Ba_0.7La_0.3Fe₁₂O₁₉ so as to maximize both coercivity and specific saturation magnetization in the HCl-washed sample synthesized by starting with an unusually low Fe/(Ba+La) molar ratio of 2 (or n=1).     

Electrochemical etching of silicon carbide

Both n- and p-type SiC of different doping levels were electrochemically etched by HF. The etch rate (up to 1.5 μm/min) and the surface morphology of p-type 6H-SiC were sensitive to the applied voltage and the HF concentration. The electrochemical valence of 6.3 ± 0.5 elementary charge per SiC molecule was determined. At p-n junctions (p-type layer on a n-type 6H-SiC substrate) a selective etching of the p-type epilayer could be achieved. For a planar 6H-4H polytype junction (n-type, both polytypes with equal doping concentrations) the 4H region was selectively etched under UV illumination. Thus polytype junctions could be marked by electrochemical etching. With HCl instead of HF no etching of SiC occurs, but a SiO₂ layer (thickness up to 8 μm) is formed by anodic oxidation. Received: 29 October 1998 / Accepted: 27 January 1999     

A facial approach to fabricate superhydrophobic aluminum surface

A facial chemical etching method was developed for fabricating superhydrophobic aluminum surfaces. The resultant surfaces were characterized by scanning electron microscopy, water contact angle (WCA) measurement, and optical methods. The surfaces of the modified aluminum substrates exhibit superhydrophobicity, with a WCA of 154.8° ± 1.6° and a water sliding angle of about 5°. The etched surfaces have binary structure consisting of the irregular microscale plateaus and caves in which there are the nanoscale block‐like convexes and hollows. The superhydrophobicity of aluminum substrates occurs only in some structures in which the plateaus and caves are appropriately ordered. The resulted surfaces have good self‐cleaning properties. The results demonstrate that it is possible to construct superhydrophobic surface on hydrophilic substrates by tailoring the surface structure to providing more spaces to trap air. Copyright © 2009 John Wiley & Sons, Ltd.     

Quartz crystal microbalance simulation of the directionality of Si etching in CF4 glow discharges

Two quartz crystal microbalances have been mounted in a planar rf discharge system in such a way that the potential of the microbalances with respect to the glow discharge can be varied. This apparatus allows a rapid simulation of the etching directionality that can be expected in real pattern transfer situations in that operating one microbalance at ground and one at a negative potential gives a measure of the sidewall and vertical etch rates, respectively. The voltage threshold for ion-assisted etching has been determined to be 20 V which is the approximate value of the plasma potential in this asymmetric system.     

平面应变条件下孔洞化不稳定性问题研究

考虑平面应变条件下，由一类推广的幂次neo—Hookean材料组成的内部分布温度场的圆柱体在轴向和径向载荷作用下的孔洞化不稳定性问题，研究中发现当材料参数满足一定的条件时，存在着一个载荷临界值，当外加载荷大于该临界值时，圆柱体中心将出现一个圆柱形的孔洞，即发生了孔洞化不稳定性现象并详细讨论了温度和材料参数对孔洞化极限载荷的影响。     

A comparative study of indoor radon level measurements in the dwellings of Punjab and Himachal Pradesh, India

The LR-115 type-II plastic track detector has been used for measuring the indoor radon levels in the dwellings of some villages of Punjab and Himachal Pradesh. In Punjab, the villages surveyed are Rampura Phul, Lehra Mahabat and Pitho (villages in Bathinda district), and Amritsar city. The average indoor radon levels in these areas are found to vary from 64 to 152 Bq/m³, which are quite within the safe limits recommended by International Commission on Radiological Protection (Ann. ICRP 23(2)). The indoor radon levels have also been measured in the dwellings of Hamirpur district of Himachal Pradesh. The villages surveyed in this area are Nukhel, Badarn, Galore-Khas, Har-Upper, Tikker Brahamana and Awah-Lower where radon concentration has been found to vary from 261 to 724 Bq/m³. These values are higher than the recommended limit.