Refinement of etching techniques to reveal lamellar profiles in polyethylene banded spherulites

Permanganic reagents, developed for revealing semicrystalline morphology in olefin polymers under the electron microscope, have been modified by changing the water content to give the best resolution of detail in different polyethylene specimens. An optimum reagent is chosen to characterize a special feature of polyethylene spherulites, namely the S‐profile of dominant lamellae seen as growing towards the observer. This reagent consists of 1% weight of potassium permanganate in a mixture of 10 volumes concentrated sulphuric acid, 4 volumes of 85% orthophosphoric acid, and 1 volume of water. This study is set in the historical context of banded spherulite studies. © 1999 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 37: 2279–2286, 1999     

深振幅Al调制靶的化学腐蚀制备工艺研究

 介绍了用于惯性约束聚变分解实验的铝调制靶的制备。以半导体光刻工艺结合化学腐蚀工艺在铝箔表面引入周期为50 μm的条槽图形,研究腐蚀条件对腐蚀速率的影响;采用光学显微镜、扫描电镜和台阶仪对图形形貌和样品表面成分进行测量和分析,获得厚度在32 μm左右、腐蚀深度达到20 μm的铝调制靶。     

激光刻蚀对镀金表面二次电子发射的有效抑制

使用红外激光刻蚀技术在镀金铝合金表面制备了多种形貌的微孔及交错沟槽阵列.表征了两类激光刻蚀微阵列结构的三维形貌和二维精细形貌,分析了样品表面非理想二级粗糙结构的形成机制.研究了微阵列结构二次电子发射特性对表面形貌的依赖规律.实验结果表明:激光刻蚀得到的微阵列结构能够有效抑制镀金表面二次电子产额(secondary electron yield,SEY),且抑制能力明显优于诸多其他表面处理技术;微阵列结构对SEY的抑制能力与其孔隙率及深宽比呈现正相关,且孔隙率对SEY的影响更为显著.使用蒙特卡罗模拟方法并结合二次电子发射唯象模型和电子轨迹追踪算法,仿真了各微结构表面二次电子发射特性,模拟结果从理论上验证了微阵列结构孔隙率及深宽比对表面SEY的影响规律.本文获得了能够剧烈降低镀金表面SEY的微阵列结构,理论分析了SEY对微结构特征参数的依赖规律,对开发空间微波系统中低SEY表面及提高镀金微波器件性能有重要意义.     

激光刻蚀模板中电沉积特殊结构CIGS薄膜

本文利用激光刻蚀模板,在水溶液中电沉积制备金属铜薄膜,讨论了温度、电流、硫酸铜浓度对薄膜形貌的影响. 采用SEM对制备的铜薄膜进行表征,结果表明在沉积温度为30 ℃,沉积电流为4 A·dm^-2(表观工作电流密度),硫酸铜浓度在20 ~ 50 g·L^-1的水溶液中电沉积可以得到中空馒头状和开口碗状结构的铜薄膜. 利用激光刻蚀模板,在离子液体1-丁基-3-甲基咪唑三氟甲磺酸盐([BMI][TfO]) - 30 Vol%丙醇混合电解质中电沉积CIGS薄膜,研究了沉积电势、沉积时间对薄膜形貌的影响. SEM观察发现,在沉积电势为-1.8 V,沉积时间为1.5 h条件下电沉积可以得到近似柱状的簇状花束样的CIGS薄膜, 电沉积铜后再进一步电沉积CIGS,得到了均匀有序的鼓包柱状结构的Cu/CIGS复合薄膜. 用恒电势方波法对制备的薄膜真实表面积进行测试,计算结果表明,与无模板电沉积制备的CIGS薄膜相比,激光刻蚀模板法制备的Cu/CIGS复合薄膜的表面积提高了约8倍.     

Track revelation and optical properties of pentaerythritol tetrakis (allyl carbonate) plastic for application as nuclear track detector: effects of gamma radiations

The etching conditions of an indigenously prepared thin film of pentaerythritol tetrakis(allyl carbonate) (PETAC) were standardised for the use as a nuclear track detector. The optimum etching times in 6?N NaOH at 70°C for the appearance of fission and alpha tracks recorded in this detector from a ²⁵²Cf solid source were found to be 30 min and 1.50?h, respectively. The experimentally determined values for the bulk and track-etch rates for this detector in 6?N NaOH at 70°C were found to be 1.7?±?0.1 and 88.4?±?10.7?µm/h, respectively. From these results, the important track etching properties such as the critical angle of etching, the sensitivity and the fission track registration efficiency were calculated and compared with the commercially available detectors. The activation energy value for bulk etching calculated by applying Arrhenius equation to the bulk etch rates of the detector determined at different etching temperatures was found to be 0.86?±?0.02?eV. This compares very well with the value of about 1.0?eV reported for most commonly used track detectors. The effects of gamma irradiation on this new detector in the dose range of 200–1000?kGy have also been studied using bulk etch rate technique. The activation energy values for bulk etching calculated from bulk etch rates measurements at different temperatures were found to decrease with the increase in gamma dose indicating scission of the detector due to gamma irradiation. The optical band gap of this detector was also determined using UV–visible spectrometry and the value was found to be 4.37?±?0.05?eV.     

Chemical etching investigation of polycrystalline p-type 6H-SiC in HF/Na2O2 solutions

In this work, an experimental study on the chemical etching reaction of polycrystalline p-type 6H-SiC was carried out in HF/Na₂O₂ solutions. The morphology of the etched surface was examined with varying Na₂O₂ concentration, etching time, agitation speed and temperature. The surfaces of the etched samples were analyzed using scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) Fourier transform infrared spectroscopy (FT-IR) and photoluminescence. The surface morphology of samples etched in HF/Na₂O₂ is shown to depend on the solution composition and bath temperature. The investigation of the HF/Na₂O₂ solutions on 6H-SiC surface shows that as Na₂O₂ concentration increases, the etch rate increases to reach a maximum value at about 0.5 M and then decreases. A similar behaviour has been observed when temperature of the solution is increased. The maximum etch rate is found for 80 °C. In addition, a new polishing etching solution of 6H-SiC has been developed. This result is very interesting since to date no chemical polishing solution has been developed on the material.     

Patterning on single crystalline silicon by laser scanning and alkaline etching

The applicability of laser processing for small-lot micro-electromechanical system devices is discussed in this paper. This simple process could replace conventional complex processes designed with mass production in mind. Ablation, protrusions or surface modification is revealed to occur by argon ion laser scanning into silicon. Which of them occurs depends on the laser power. It is found that the protrusions are covered by a thin layer of oxide; however, oxidation of the modified surface is not established even though some results suggest it. Surface modification is more applicable to surface patterning than coarse protrusion is because the laser-modified surface can be used as a mask in KOH etching to make sharp patterns. The applicability of this method is indicated by demonstrating pattern width control, patterning over a large area and the fabrication of a 16-bit linear scale.     

Shallow surface etching of organic and inorganic compounds by electrospray droplet impact

The electrospray droplet impact (EDI) was applied to bradykinin, polyethylene terephthalate (PET), SiO₂/Si, and indium phosphide (InP). It was found that bradykinin deposited on the stainless steel substrate was ionized/desorbed without the accumulation of radiation products. The film thickness desorbed by a single collisional event was found to be less than 10 monolayers. In the EDI mass spectra for PET, several fragment ions were observed but the XPS spectra did not change with prolonged cluster irradiation. The etching rate for SiO₂ by EDI was measured to be ∼0.2 nm/min. The surface roughness of InP etched by EDI was found to be one order of magnitude smaller than that etched by 3 keV Ar⁺ for about the same etching depths. EDI is capable of shallow surface etching with little damage left on the etched surface.     

多层介质膜光谱调制反射镜的反应离子束刻蚀误差容限

 在千焦拍瓦高功率放大系统设计中,激光脉冲的时空和光谱整形技术一直受到人们的广泛关注。利用反应离子束刻蚀等微纳超精细加工而成的多层电介质结构反射镜可在高功率条件下实现啁啾脉冲的光谱整形。在光谱整形介质结构反射镜的设计与制造中,需要根据要求的反射率来合理提出反应离子束刻蚀误差容限指标。推导出反应离子束刻蚀误差容限的解析表达式。针对神光Ⅱ千焦拍瓦高功率放大系统设计中提出的多层介质光谱调制反射镜,分析了调制结构反射镜各层加工的容许误差,确定了反应离子束刻蚀误差容限指标。研究表明：刻蚀高折射率介质的加工误差容限为35 nm;刻蚀低折射率介质的加工误差容限为62 nm。此外,还从使用需要和加工难易的角度,对刻蚀方案进行了讨论。就加工难易程度而言,优选反应离子束刻蚀方案,且采用刻蚀并残留低折射率介质的方案更容易实现。     

Electrochemical etching technique for neutron dosimetry

In the present work we have employed allyl diglycol carbonate (CR-39) and cellulose triacetate (CTA) plastic for detection of neutron recoil tracks without radiator. For CR-39, the results reveal that registration efficiency is a function of duration of chemical pre-etching and the best results are obtained with chemical pre-etching of 3 hours. It was also investigated that the ac field strength of 28 kV/cm having 2.5 kHz frequency was optimum for revelation of tracks. Interestingly the sensitivity is fluence dependent and it was constant up to a fluence of about 10⁸ n/cm². The sensitivity abruptly decreased with increased fluence. At optimum experimental conditions the minimum detection limit for CR-39 was found to be 0.47 mSv. For CTA, the tracks have been revealed by electrochemical etching (ECE) only and the minimum detection limit was found to be 0.85 mSv at optimum experimental parameters.