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101.
The investigation of the track etching velocity dependence for nuclei with Z50 on pH of the etching solution in the olivine crystals from Marjalahti and Eagle Station meteorites, containing galactic cosmic-ray nuclear tracks and also the crystals from Marjalahti meteorite, calibrated at the UNILAC (GSI, Darmstadt) with 14.17 MeV/N 208Pb nuclei, were performed.

The pH of the etching solution were changed from 7.8 to 9.4. It is shown that the optimal track etch condition were realised at pH of etching solution in the interval from 8.4 to 8.8.

The results of the Galactic cosmic-ray nuclei tracks with Z83 revealed in olivine crystals are presented. They were additionally irradiated at 90% to the surface with accelerated 14 MeV/N 132Xe nuclei.  相似文献   

102.
衍射光学元件的反应离子束蚀刻研究   总被引:3,自引:1,他引:2  
杨李茗  虞淑环 《光子学报》1998,27(2):147-151
本文提出了一种制作衍射光学元件的新方法——-反应离子束蚀刻法.对此技术研究的结果表明:反应离子束蚀刻法具有高蚀刻速率、蚀刻过程各向异性好、蚀刻参数控制灵活等特点,对于衍射光学元件和微光学元件的精细结构制作十分有利.本文详细总结了反应离子束蚀刻过程中各工艺参数对蚀刻速率的影响,并在红外材料上制作了Dammann分束光栅.  相似文献   
103.
平面调制靶的表面起伏图形研制   总被引:5,自引:2,他引:3       下载免费PDF全文
表面起伏靶是惯性约束聚变(ICF)分解实验中的重要实验用靶。本文报导了采用离子束刻蚀和激光干涉两种方法制备初始微扰振幅和波长分别在几微米和几十微米范围的正弦调制形状;摸索了相应的工艺条件和工艺过程;用台阶仪及光学显微轮廓仪测微加工后的形貌;探讨了调制波长的精确控制与干涉工艺之间的关系。  相似文献   
104.
唐元洪  裴立宅  陈扬文  郭池 《物理》2006,35(6):466-468
文章作者的研究小组在世界上首次合成自组生长的硅纳米管(SiNTs)后,对它的稳定性研究又获得进展.采用5wt%的HF酸对自组生长的硅纳米管的稳定性进行了研究,研究表明HF酸可以去除硅纳米管的氧化物外层,只剩下晶体硅纳米管,说明所得到的硅纳米管是一种稳定结构,因而使其应用研究开发成为可能.研究表明,硅纳米管的稳定性与其生长形成过程密切相关。  相似文献   
105.
We demonstrate optical properties of one-dimensional photonic crystals (PC), which are fabricated using high-aspect-ratio etching on a V-grooved silicon wafer. The measured transmission spectrum has an obvious band gap; the suppression is over 30 dB. The quite small insertion loss of 1.9 dB is achieved by induced coupled plasma (ICP) cryogenic etching and direct coupling to the optical fiber aligned in the V-groove. We also successfully observed peaks originating from a localized cavity mode. Such a microcavity enables control of the light, which qualifies photonic crystal as a fundamental structure of optical functional devices. These results lead to achievement of integrated Si-based photonic circuits.  相似文献   
106.
在ZrO2、InP、Si及SiO2即融凝石英衬底上用氩离子束刻蚀制作面阵矩底拱面状微透镜阵列,给出了氩离子束在不同的入射角度下刻蚀器件的速率与离子束能量之间的关系。实验表明,用国产BP212紫外正型光刻胶制作的光致抗蚀剂掩膜图形在经过优化的工艺条件下可以通过氩离子束刻蚀将预定图形转移到衬底材料中。  相似文献   
107.
The kinetic and atomistic theories of crystal growth and dissolution are used to interpret the shapes and orientations of fission-track, recoil-track and dislocation etch pits in tri-octahedral phlogopite and di-octahedral muscovite. An atomistic approach combined with symmetry considerations lead to the identification of the periodic bond chains that determine the etch pit morphologies and relative etch rates at a chemical level: O–Mg–O in phlogopite, O–Mg–O–Fe in biotite and O–Al–O in muscovite. Using first-order estimates of the bond strengths, it is possible to account for the relative track etch rates in these minerals. The reported, sometimes simultaneous, occurrence of triangular, polygonal and hexagonal etch pit contours in phlogopite, some of which violate the crystal symmetry, suggests that the cohesion of the phlogopite lattice is lost over a much larger radius than that of the track core around the trajectories of particles for which the energy loss exceeds a threshold value. This is interpreted as an indication of pronounced sublattice and anisotropic effects during track registration.  相似文献   
108.
The bulk etch rate for two types of CR-39 detector was measured as a function of temperature and the activation energies of bulk etching was determined. Experimental values of track etch rate were derived directly from the function of the succesive measured track length vrs. etching time for 209Bi, 129Xe and 20Ne ions.

The maximum etchable length of 13 MeV/u 209Bi and 13.04 MeV/u 129Xe ions have been measured at and below these energies. A comparison of the measured and calculated track length data is presented.  相似文献   

109.
Track etch detectors CR-39 irradiated with relativistic heavy ions (C, Ne, Si and Fe, ) and high-energy protons (35–230 MeV) were etched both chemically and electrochemically. To determine an angular dependence of response in detail (step 1), an arrangement of a single detector bent into a semi-cylindrical form was used. Experimental data were fitted by polynomic functions and the detection efficiencies for isotropic irradiation were calculated. Critical angles of registration were also determined for heavy ions. The possible influence of additional absorbers and radiators was also estimated.  相似文献   
110.
The ozone etching of thin films of a commercial polystyrene-polyisoprene-polystyrene (PS-PI-PS) triblock copolymer (Vector 4111) was studied using atomic force microscopy (AFM) and ellipsometry. The major phase of the copolymer consists of PI (82 wt.%) and the copolymer forms a cylindrical structure upon annealing. Moderate ozone doses (1.4% wt/wt) were used to etch the copolymer. This revealed two stages of the ozonation: rapid etching of the PI fragments followed by slow compacting of the remaining PS cylinders. Under certain conditions ozone treatment results in the formation of nanosized grooves in a PS matrix which is suitable for lithographic processes.  相似文献   
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