安培检测芯片毛细管电泳及其初步应用

An end-channel amperometric detector with a guide tube for working electrode was designed and integrated on a home-made glass microchip. The guide tube was directly patterned and fabricated at the end of the detection reservoir, which made the fixation and alignment of working electrode relatively easy. The fabrication was carried out in a two-step etching process. A 30 μm carbon fiber microdisk electrode and Pt cathode were also integrated onto the amperometric detector. The baseline separation of dopamine (DA), catechol (CA) and epinephrine (EP) was achieved within 80 s. Relative standard deviations of not more than 5.2% were obtained for both peak currents and migration times of DA and CA (n=5). Using standard adding method, DA in tLrine and plasma samples was detected. The recoveries were in the range of 83%—103%.     

Temperature-dependent dry etching characteristics of III–V semiconductors in HBr- and HI-based discharges

Microwave discharges of HBr/H₂/Ar and H/H₂/Ar with additional do biasing of the sample were used to etch InP, GaAs, and AlGaAs at temperatures between 50–250°C. The etch rates increase by factors of 3–50 and 5–9, respectively, for HBr-and HI-based discharges over this temperature range, but display non-Arrhenius behavior. The etched surfaces became very rough above 100°C for InP with either discharge chemistry due to preferential loss of P, while GaAs and AlGaAs are more tolerant of the elevated temperature etching. The near-surface electrical properties of InP are severely degraded by etch temperatures above 100°C, while extensive hydrogen in-diffusion occurs in GaAs and AlGaAs under these conditions, leading to dopant passivation which can be reversed by annealing at 400°C.     

Characteristics of vinyl iodide microwave plasma etching of GaAs/AlGaAs and InP/InGaAs heterostructures

Vinyl iodide (C₂H₃I) microwave discharges with additions of H₂ and Ar are found to provide faster etch rates than conventional CH₄/H₂/Ar discharges for InP, InGaAs, GaAs, and AlGaAs. This is a result of the relatively high volatilities of indium, gallium, and aluminum iodide species. The etched features are smooth and anisotropic over a wide range of do self-biases (–150 to –350 V), process pressures (1–20mTorr), and microwave powers (150–500 W). The polymer that forms on the mask during the plasma exposure can be readily removed in O₂ discharges. Electron spectroscopy for chemical analysis (ESCA) showed that the etched surfaces are slightly deficient in the group V elements under most conditions, but changes to the optical properties of the semiconductors are minimal. No defects are visible by transmission electron microscopy (TEM) in GaAs or InP samples etched at dc biases –250 V.     

A model for the etching of Si in CF4 plasmas: Comparison with experimental measurements

A model has been developed to describe the chemistry which occurs in CF₄ plasmas and the etching of Si both in the plasma and downstream. One very important feature of this model is that for discharge residence times which vary by more than an order of magnitude, the amount of CF₄ consumed is low and relatively constant. This is because the gas-phase combination reactions between F and both CF₃ and CF₂ lead to the rapid reforming of CF₄. The model predicts that CF₂ is a major species in the gas phase and that the [F] detected as a sample point downstream is a very sensitive function of [CF₂]/[F] in the discharge. Even though the calculations show that [F] in the discharge varies only slightly over the wide range of experimental conditions considered, large variations in [F] at the sample point occur because the [CF₂]/[F] ratio in the discharge changes. The concentrations of C₂F₆ and SiF₄ are predicted to within a factor of 2 over a very wide range of experimental conditions. This confirms the importance of gas-phase free radical reactions in the etching of Si.     

A model for the etching of silicon in SF6/O2 plasmas

A model has been developed to describe the chemistry which occurs in SF₆/O₂ plasmas and the etching of silicon in these plasmas. Emphasis is placed nn the gas-phase free radical reactions, and the predictions n( the model are compared with experimental results. Forty-seven reactions are included, although a subset of 18 reactions describes the chemistry equally well. Agreement between the calculated and measured concentrations of stable products downstream of the plasma is better than a factor of 2. The need for additional kinetic data and fàr well-characterized diagnostic studies of SF₆/O₂ plasmas is discussed.     

The use of “actinometer” gases in optical diagnostics of plasma etching mixtures: SF6-O2

The spectroscopic emission intensities from excited F atoms in SF₆-O₂ discharges at 1 torr have been correlated to the densities of atoms in their ground electronic state by measuring the excitation efficiencies of the electrons in the energy range 11 to 17 eV with a method which essentially consists in the analysis of the emission of Ar or N₂, added as actinometer gases to the discharge mixtures. The general applicability of the method has been tested by a direct titration of F atoms with chlorine. The spectroscopic analysis has allowed the determination of useful information on the trends of both the electron densities and their energies as a function of the oxygen percent in the feed.     

Role of Hydrodynamic Conditions in the Distribution of Anodic Dissolution Rates in Cavity Etching Regions during Electrochemical Micromachining of Partially Insulated Surfaces

Experimental study of the distribution of local rates of electrochemical micromachining in the presence of photoresist masks in various hydrodynamic conditions (macroscopically nonuniform rotating disk electrode, sprayer flow, an electrode placed into a cell with chaotic bulk electrolyte mixing) shows that the maximum etching localization is achieved at the control of the dissolution rate by the mass transport rate (at achieving the anodic limiting current). The localization enhancement as compared to the primary current distribution takes place in the case of a turbulent flow at hydrodynamic conditions where the removal of dissolution products from the undercutting region is hindered. These conditions (electrochemical reaction limited by the ion mass transport rate, high resistance to the mass transport in the undercutting region) are necessary for the localization enhancement using a pulsed anodic–cathodic treatment.     

HPLC of antibiotics. 1. Streptolydigin and related compounds

Two new acyltetramic acids related to streptolydigin have been isolated from fermentations of Streptomyces lydicus. The principal members of this complex were resolved by TLC on silica gel. However, the methods of detection, permanganate spray or bioautography, were not suitable for both crude fermentation broths and purified extracts. Gas chromatography is unsuitable for the detection of either underivatized or silylated streptolydigins. High performance liquid chromatography (HPLC) particularly on triethylaminoethyl cellulose is rapid and sensitive and is the method of choice for the analysis of both crude and purified samples. Using high performance liquid chromatography, two components were detected in the complex, which are not observed using any of the other chromatographic procedures.     

Mechanism of silicon film deposition in the RF plasma reduction of silicon tetrachloride

Plasma-chemical reduction of SiCl₄ in mixtures with H₂ and Ar has been studied by optical emission spectroscopy (OES) and laser interferometry techniques. It has been found that the Ar:H₂ ratio strongly affects the plasma composition as well as the deposition (r _D) and etch (r _E) rates of Si: H, Cl films and that the electron impact dissociation is the most important channel for the production of SiCl_x species, which are the precursors of the film growth. Chemisorption of SiCl_x and the reactive surface reaction SiCl_x+H–SiCl_(x–1)0+HCl are important steps in the deposition process. The suggested deposition model givesr _D [SiCl_x][H], in agreement with the experimental data. Etching of Si: H, Cl films occurs at high Ar: H₂ ratio when Cl atoms in the gas phase become appreciable and increases with increasing Cl concentration. The etch rate is controlled by the Cl atom chemisorption step.