碱金属在磷烯表面吸附，迁移行为的第一性原理研究

利用基于密度泛函理论的平面波赝势方法研究了碱金属（Li、Na、K）−磷烯体系,分析了体系的吸附性质、电学性质和迁移行为. 结果表明：碱金属在磷烯表面的最稳定吸附位都是H位.吸附过程中电荷由碱金属原子转移到磷烯,碱金属−磷烯体系表现出一定的离子性. 碱金属−磷烯体系的吸附能从大到小为ΔELi−磷烯大于ΔEK−磷烯大于ΔENa−磷烯. Li→Na→K,随着原子序数的递增,体系的离子性逐渐增强;碱金属原子越来越容易在磷烯表面迁移.     

First-principles study on the influence of biaxial strain on the electronic and magnetic properties of defective blue phosphorene

Regulating the magnetic state of 2D materials is becoming increasingly important for the next generation of spintronic devices. In this study, the first-principles calculation method is used to study the synergistic modulating effect of biaxial strain and vacancy defects on the magnetic properties of blue phosphorene. Results show that only Single Vacancy (SV) doping magnetizes the intrinsic blue phosphorene, Double Vacancy-1 (DV-1), Double Vacancy-2 (DV-2) and Double Vacancy-3 (DV-3) doped blue phosphorene are magnetized under biaxial strain. The magnetic states of SV, DV-1, DV-2 and DV-3 systems change with the intensity of biaxial strain. In some cases, the magnetic moment of the system can be changed from 0 μB to 4 μB. The biaxial strain affects the partially bonding structure near the defects, changes the position of the dangling bond, and thereby adjusts the magnetic state. Our research provides positive guidance for the future application of blue phosphorene in the semiconductor field.     

离子辐照对磷烯热导率的影响及其机制分析

通过离子辐照产生缺陷,可以非常有效地调控磷烯诸多物理性质.本文应用分子动力学方法模拟离子辐照磷烯的过程,给出了缺陷的形成概率与入射离子能量、离子种类以及离子入射角度之间的关系,并且应用非平衡态分子动力学计算辐照后磷烯热导率的变化.以缺陷形成概率为切入点,系统地研究了辐照离子的能量、辐照剂量、离子的种类以及离子的入射角度对磷烯热导率的影响.应用晶格动力学方法研究了空位缺陷对磷烯声子参与率的影响,并计算了声子局域模式的空间分布.基于量子微扰和键弛豫理论,指出空位缺陷明显降低磷烯热导率的最重要物理机制是空位缺陷附近的低配位原子对声子强烈散射.本文研究可为缺陷工程调控磷烯的热输运性质提供理论参考.     

Portable Wireless Intelligent Electrochemical Sensor for the Ultrasensitive Detection of Rutin Using Functionalized Black Phosphorene Nanocomposite

To build a portable and sensitive method for monitoring the concentration of the flavonoid rutin, a new electrochemical sensing procedure was established. By using nitrogen-doped carbonized polymer dots (N-CPDs) anchoring few-layer black phosphorene (N-CPDs@FLBP) 0D-2D heterostructure and gold nanoparticles (AuNPs) as the modifiers, a carbon ionic liquid electrode and a screen-printed electrode (SPE) were used as the substrate electrodes to construct a conventional electrochemical sensor and a portable wireless intelligent electrochemical sensor, respectively. The electrochemical behavior of rutin on the fabricated electrochemical sensors was explored in detail, with the analytical performances investigated. Due to the electroactive groups of rutin, and the specific π-π stacking and cation–π interaction between the nanocomposite with rutin, the electrochemical responses of rutin were greatly enhanced on the AuNPs/N-CPDs@FLBP-modified electrodes. Under the optimal conditions, ultra-sensitive detection of rutin could be realized on AuNPs/N-CPDs@FLBP/SPE with the detection range of 1.0 nmol L⁻¹ to 220.0 μmol L⁻¹ and the detection limit of 0.33 nmol L⁻¹ (S/N = 3). Finally, two kinds of sensors were applied to test the real samples with satisfactory results.     

碳、氧、硫掺杂二维黑磷的第一性原理计算

基于密度泛函理论的第一性原理平面波赝势方法,研究了二维黑磷中的碳原子(C P)、氧原子(C P)、硫原子(S P)掺杂的几何结构、磁学性质和电子结构.发现掺杂体系结构稳定,C P和O P体系形变较大,而S P体系形变较小;二维黑磷本身无磁矩,掺杂后都具有1μB的总磁矩.由于掺杂体系具有稳定的铁磁性,使其在自旋电子器件方面可发挥重要的作用.     

Topological Transition in Monolayer Blue Phosphorene with Transition-Metal Adatom under Strain

We carried out first-principles calculations to investigate the electronic properties of the monolayer blue phosphorene (BlueP) decorated by the group-IVB transition-metal adatoms (Cr, Mo and W), and found that the Cr-decorated BlueP is a magnetic half metal, while the Mo- and W-decorated BlueP are semiconductors with band gaps smaller than 0.2 eV. Compressive biaxial strains make the band gaps close and reopen, and band inversions occur during this process, which induces topological transitions in the Mo-decorated BlueP (with strain of \begin{document}$ -5.75\% $\end{document}) and W-decorated BlueP (with strain of \begin{document}$ -4.25\% $\end{document}) from normal insulators to topological insulators (TIs). The TI gap is 94 meV for the Mo-decorated BlueP and 218 meV for the W-decorated BlueP. Such large TI gaps demonstrate the possibility to engineer topological phases in the monolayer BlueP with transition-metal adatoms at high temperature.     

Recent Advances in the Study of Phosphorene and its Nanostructures

Phosphorene, a single layer of black phosphorus, has attracted considerable attention recently due to its intriguing structures and fascinating electronic properties. In particular, its remarkable properties, such as high charge carrier mobility, direct band-gap semiconducting characteristics, and strong anisotropies in electro-optical and thermo-mechanical properties, etc., are opening up brand-new opportunities for its applications in nanoelectronics, optoelectronics, sensors, energy conversion, and advanced engineering materials, etc. In this article, we present recent advances in the study of phosphorene and its derivatives (nanoribbons, nanotubes, fullerenes, and heterostructures) with special emphasis on structures, morphologies, properties (electronic, optical, magnetic, thermal, mechanical), and applications (transistors, phonon detectors, digital circuits, sensors, thermoelectric materials, Li-ion batteries). In addition, routes for modifying these properties by physical and chemical functionalization, defect engineering, strain engineering, and electric fields are discussed. Our intent is to present a state-of-the-art view in this fast-evolving field, with a balanced theoretical and experimental perspective.     

Computationally predicting spin semiconductors and half metals from doped phosphorene monolayers

First-principles computations are performed to investigate phosphorene monolayers doped with 30 metal and nonmetal atoms. The binding energies indicate the stability of all doped configurations. Interestingly, the magnetic atom Co doping induces the absence of the magnetism while the magnetism is realized in phosphorene with substitutional doping of nonmagnetic atoms (O, S, Se, Si, Br, and Cl). The magnetic moment of transition metal (TM)-doped systems is suppressed in the range of 1.0-3.97 μ_B. The electronic properties of the doped systems are modulated differently; O, S, Se, Ni, and Ti doped systems become spin semiconductors, while V doping makes the system a half metal. These results demonstrate potential applications of functionalized phosphorene with external atoms, in particular to spintronics and dilute magnetic semiconductors.