Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 10¹¹ cm^–2 eV^–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10^–5A/cm² at V_fb + 1 V). These merits should be attributed to the complementary properties of Y₂O₃ and Ta₂O₅:Y can effectively passivate the large amount of oxygen vacancies in Ta₂O₅, while the positively‐charged oxygen vacancies in Ta₂O₅ are capable of neutralizing the effects of the negative oxide charges in Y₂O₃. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.

Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets.     

Interface formation of Al2O3 on n‐GaN(0001): Photoelectron spectroscopy studies

Al₂O₃ insulator layers were deposited step by step by the physical vapor deposition (PVD) method onto gallium nitride in the wurtzite form, n‐type and (0001)‐oriented. The substrate surface and the early stages of Al₂O₃/n‐GaN(0001) interface formation were characterized in situ under ultra‐high vacuum conditions by X‐ray and ultraviolet photoelectron spectroscopy (XPS, UPS). The electron affinity (EA) of the substrate cleaned by annealing was 3.6 eV. Binding energies of the Al 2p (76.0 eV) and the O 1s (532.9 eV) confirmed the creation of the Al₂O₃ compound in the deposited film for which the EA was 1.6 eV. The Al₂O₃ film was found to be amorphous with a bandgap of 6.9 eV determined from the O 1s loss feature. As a result, the calculated Al₂O₃/n‐GaN(0001) valence band offset (VBO) is ?1.3 eV and the corresponding conduction band offset (CBO) 2.2 eV.     

超浸润形状记忆海绵的制备及油-水分离性能

基于反式 1,4-聚异戊二烯(TPI)的形状记忆性能, 以聚氨酯海绵为基底, 包覆TPI制备出了一种具有疏水超亲油特性的三维多孔形状记忆海绵. 由于这种海绵具有良好的形状记忆特性, 可以通过反复按压/恢复过程, 实现对海绵孔径在微米尺寸(约875 μm)与纳米尺寸(约450 nm)间可逆调控. 利用材料特殊的浸润特征及其可控的孔尺寸, 进一步研究了其在油-水分离中的应用. 研究结果表明, 微米尺寸大孔径海绵有利于对不相溶油-水混合物进行快速高效分离, 而纳米尺寸小孔径海绵则有利于对乳液混合物进行分离, 实现了同一材料同时满足不相溶油-水混合物及乳液体系的分离要求.     

Mixing of Racemic Poly(L-lactide)/Poly(D-lactide) Blend with Miscible Poly(D,L-lactide):Toward All Stereocomplex-type Polylactide with Strikingly Enhanced SC Crystallizability

Stereocomplex-type polylactide (SC-PLA) consisting of alternatively arranged poly(L-lactide) (PLLA) and poly(D-lactide) (PDLA) chains has gained a good reputation as a sustainable engineering plastic with outstanding heat resistance and durability,however its practical applications have been considerably hindered by the weak SC crystallizability.Current methods used to enhance the SC crystallizability are generally achieved at the expense of the precious bio-renewability and/or bio-degradability of PLAs.Herein,we demonstrate a feasible method to address these challenges by incorporating small amounts of poly(D,L-lactide) (PDLLA) into linear high-molecular-weight PLLA/PDLA blends.The results show that the incorporation of the atactic PDLLA leads to a significant enhancement in the SC crystallizability because its good miscibility with the isotactic PLAs makes it possible to greatly improve the chain mixing between PLLA and PDLA as an effective compatibilizer.Meanwhile,the melt stability (i.e.,the stability of PLLA/PDLA chain assemblies upon melting) could also be improved substantially.Very intriguingly,SC crystallites are predominantly formed with increasing content and molecular weight of PDLLA.More notably,exclusive SC crystallization can be obtained in the racemic blends with 20 wt％ PDLLA having weight-average molecular weight of above 1 ×10s g/mol,where the chain mixing level and intermolecular interactions between the PLA enantiomers could be strikingly enhanced.Overall,our work could not only open a promising horizon for the development of all SC-PLA-based engineering plastic with exceptional SC crystallizability but also give a fundamental insight into the crucial role of PDLLA in improving the SC crystallizability of PLLA/PDLA blends.     

Dithienylmaleimide-based D-A Conjugated Polymer Film: Photo-Responsive Behavior and Application in Electrical Memory and Logic Gates

Solid-stated smart polymers responsive to external stimuli have attracted much attention for potential application in the field of photoelectron devices, logic gates, sensor, data storage and security. However, it is a bigger challenge for polymers than that for small molecules in solid state to acquire stimuli-responsive properties, because polymers with high molecular weight are not as easy to change the packing structure as small molecules under external stimulation. Here, a D-A type alternating copolymer PTMF-o containing 3,4-bisthienylmaleimide(A unit) and fluorene(D unit) is designed and synthesized. Upon irradiation of sunlight, PTMF-o film exhibits a photo-response with the color altering from purple to colorless. It is attributed to the structure of copolymer transformed from ring-opening form(PTMF-o) to ring-closure form(PTMF-c), resulting from the oxidative photocyclization of 3,4-bisthienylmaleimide unit. Consequently, the ability of charge transfer(CT) from fluorene to 3,4-bisthienylmaleimide unit in PTMF-o can be easily weakened by light stimuli. PTMF-o film displays a WORM-type resistive storage performance for the strong CT. Interestingly, after exposure, the electrical memory behavior in situ transfers into FLASH type, due to weak CT in PTMF-c. PTMF-o film can also be employed as smart material to construct NAND and NOR logic gates by using light as input condition. The work provides a simple way to modify the electronic properties of polymers and realize stimuli-response in solid states.     

A Triple Crosslinking Design toward Epoxy Vitrimers and Carbon Fiber Composites of High Performance and Multi-shape Memory

It remains a challenge to use a simple approach to fabricate a multi-shape memory material with high mechanical performances. Here,we report a triple crosslinking design to construct a multi-shape memory epoxy vitrimer(MSMEV), which exhibits high mechanical properties,multi-shape memory property and malleability. The triple crosslinking network is formed by reacting diglycidyl ether of bisphenol F(DGEBF) with4-aminophenyl disulfide, γ-aminopropyltriethoxysilane(APTS) and poly(propylene glycol) bis(2-aminopropyl ether)(D2000). The triple crosslinking manifests triple functions: the disulfide bonds and the silyl ether linkages enable malleability of the epoxy network; the silyl ether linkages impart the network with high heterogeneity and broaden the glass transition region, leading to multi-shape memory property; a small amount of D2000 increases the modulus difference between the glassy and rubbery states, thereby improving the shape fixity ratio. Meanwhile,the high crosslinking density and rigid structure provide the MSMEV with high tensile strength and Young's modulus. Moreover, integrating carbon fibers and MSMEV results in shape memory composites. The superior mechanical properties of the composites and the recyclability of carbon fiber derived from the dissolvability of MSMEV make the composites hold great promise as structural materials in varied applications.     

结晶氮化碳的制备与改性策略

石墨相氮化碳(g-C_3N_4)是最具代表性的二维有机聚合物半导体材料,其具有可见光响应性能、稳定化学结构和优良的生物相容性等优点,在环境和能源领域有非常广阔的应用前景。但是,普通g-C_3N_4材料的热聚合不完全,其体相和表面的缺陷多,因此光生载流子易复合,光催化活性不高。近年来,高活性结晶氮化碳(CCN)的研究得到了国内外学者的广泛关注。本文总结了目前CCN制备及其改性方法:5种代表性制备方法,包括传统熔盐法、预热熔盐法、固态盐法、溶剂法和质子化法;4种代表性CCN的改性方法,包括缺陷引入、形貌控制、单原子修饰和材料复合。文章重点介绍了 CCN制备原理、结构特征与光催化性能。最后,对CCN的制备与改性方法进行了评价,并对其研究方向进行了展望。     

二硫化锡纳米片阻变存储器的制备与性能

采用水热法合成了尺寸为50~100 nm的二硫化锡纳米片,并首次以二硫化锡作为阻变层材料的阻变存储器（Cu/PMMA/SnS₂/Ag,PMMA=聚甲基丙烯酸甲酯）,对其阻变性能进行了研究。结果表明： Cu/PMMA/SnS₂/Ag阻变存储器的开关比约10⁵,耐受性2.7×10³。在上述2项性能指标达到较优水平的同时,开态与关态电压分别仅约为0.28与-0.19 V。     

Fe掺杂ZnTe团簇结构和磁性质

本文采用第一性原理密度泛函理论系统的研究了Fe原子单掺杂和双掺杂(ZnTe)12团簇的结构和磁性质。我们考虑了替代掺杂和间隙掺杂。不管是单掺杂还是双掺杂,间隙掺杂团簇都是最稳定结构。团簇磁矩主要来自Fe-3d态的贡献,4s 和4p 态也贡献了一小部分磁矩。由于轨道杂化,相邻的Zn和Te原子上也产生少量自旋。最重要的是,我们指出间隙双掺杂团簇是铁磁耦合,在纳米量子器件有潜在的应用价值。