介质极化的瞬时相位与振幅

求解电子运动的二阶微分方程，在旋转波近似下，介质在外场突然变化时产生的瞬态感应极化与外场同频，但相位总是落后，最大落后为π/2；振幅大小与初态有关，随时间按指数规律衰减，衰减快慢由介质的阻尼系数决定。     

Vortex lattice mobility and effective pinning potentials in the peak effect region in YBCO crystals

The peak effect (PE) in the critical current density in both low and high temperature superconductors has been the subject of a large amount of experimental and theoretical work in the last few/several years. In the case of YBCO, crucial discussions describing a dynamic or a static picture are not settled. In that region of field and temperature the mobility of the vortex lattice (VL) is found to be dependent on the dynamical history. Recently we reported evidence that the VL reorganizes and accesses to robust VL configurations (VLCs) with different effective pinning potential wells arising in response to different system histories. One of the keys to understand the nature of the PE is to investigate the VL behavior in the vicinity of the various VLCs in the region of the PE. The stability of these VLCs was investigated and it was found that they have distinct characteristic relaxation times, which may be related to elastic or plastic creep processes. In this paper we review some of these results and propose a scenario to describe the PE in YBCO crystals.     

乌骨鸡活性肽对体外非酶糖基化的抑制作用

采用正交实验优化了体外非酶糖基化反应体系,体系中加入不同浓度的乌骨鸡活性肽I、Ⅱ37 ℃孵育,同时以肌肽为阳性对照,观察乌骨鸡活性肽对非酶糖基化反应的影响.通过测定预定时间体外非酶糖基化体系的吸光度和荧光值计算乌骨鸡活性肽对非酶糖基化反应的抑制率和对非酶糖基化终产物生成的抑制率.结果表明乌骨鸡活性肽Ⅱ对体外非酶糖基化反应和非酶糖基化终产物的生成均具有较强的抑制作用.     

High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayers

High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayer (ML) up to 600 °C have been studied and reported in this paper. Ti/Ni multilayer samples having constant layer thicknesses of 50 Å each are deposited on float glass and Si(1 1 1) substrates using electron-beam evaporation technique under ultra-high vacuum (UHV) conditions at room temperatures. The micro-structural parameters and their evolution with temperature for as-deposited as well as annealed multilayer samples up to 600 °C in a step of 100 °C for 1 h are determined by using X-ray diffraction (XRD) and grazing incidence X-ray reflectivity techniques. The X-ray diffraction pattern recorded at 300 °C annealed multilayer sample shows interesting structural transformation (from crystalline to amorphous) because of the solid-state reaction (SSR) and subsequent re-crystallization at higher temperatures of annealing, particularly at ≥400 °C due to the formation of TiNi₃ and Ti₂Ni alloy phases. Sample quality and surface morphology are examined by using atomic force microscopy (AFM) technique for both as-deposited as well as annealed multilayer samples. In addition to this, a temperature dependent dc resistivity measurement is also used to study the structural transformation and subsequent alloy phase formation due to annealing treatment. The corresponding magnetization behavior of multilayer samples after each stage of annealing has been investigated by using Magneto-Optical Kerr Effect (MOKE) technique and results are interpreted in terms of observed micro-structural changes.     

Quadrupole interactions at 57Fe and 119Sn in 3d-metal antimonides

3d-metal antimonides: Fe_1+x Sb, N_+x Sb, Co_+x Sb and the (Ni_1?y Fe _y )Sb solid solution have been studied by the Mössbauer effect method at ⁵⁷Fe and ¹¹⁹Sn. It was found that the quadrupole interactions at the Fe and Sn nucleus in 3d-metal antimonides are very sensitive to the filling of different crystallographic sites with metal atoms. The metal atoms in trigonal-bipyramidal sites have a strong effect on the quadrupole splitting of ¹¹⁹Sn. They are nearest to anions (Sb or Sn) with the typical axial ratio of c/a = 1.25. The QS(x) dependence of ¹¹⁹ Sn in 3d-metal antimonides in the 0 ≤ x ≤ 0.1 concentration range can be used to determine x – the concentration of transition metal excess relative to the stoichiometric composition.     

High order generalized upwind schemes and numerical solution of singular perturbation problems

High even order generalizations of the traditional upwind method are introduced to solve second order ODE-BVPs without recasting the problem as a first order system. Both theoretical analysis and numerical comparison with central difference schemes of the same order show that these new methods may avoid typical oscillations and achieve high accuracy. Singular perturbation problems are taken into account to emphasize the main features of the proposed methods. AMS subject classification (2000)  65L10, 65L12, 65L50     

孤立分散在SiO2基质中的半导体InSb纳米颗粒界面效应的MS-XANES研究

利用MS-XANES计算研究了嵌入在SiO₂介质中的InSb纳米颗粒的界面效应, 结果显示Sb K-XANES实验谱在白线峰强度增大和白线峰向高能一侧展宽这两个特点的起因是: 1. SiO₂介质透过界面处强的Sb-O共价键间接地影响和改变了InSb团簇中Sb原子内部的势分布; 2. 通过InSb纳米颗粒界面处存在着强的Sb-O共价键使得Sb原子的5p电子被耗尽来提高InSb纳米颗粒Sb原子的5p的空穴数. 这两方面共同决定了InSb纳米颗粒的Sb K-XANES实验谱在白线峰 强度的增大. 此外, 由于纳米颗粒的界面效应, 仅仅把白线峰的强度增大归因于吸收原子电荷转移带来的空穴数增加, 并依此通过白线峰的强度计算吸收原子的空穴数是不合理的.     

Fractal character of effective Hall properties of a three-dimensional disordered composite

The dependencies of the effective Hall properties on a scale, obtained by means of an iterative averaging method, manifest their fractal character. The influence of an intensity of the Hall effect on the fractal character of the Hall properties was considered. Scale ranges and dimensional characteristics of the effective Hall properties behavior were calculated and discussed.     

一类催化反应中的非线性奇摄动边值问题的渐近解

本文研究了催化反应非线性奇摄动边值问题．利用微分不等式理论和方法，得到了问题的解的任意次近似渐近估计．     

Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE _c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE _G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E _c ). From these results, it is suggested that the PEN-FET becomes a memory device.