近垂直传播电子回旋寻常波的传播和吸收特性的解析研究

对近垂直入射的电子回旋寻常波的传播和吸收，用相对论等离子体色散关系进行了分区分析，获得了共振层附近内区O－模与X－模的耦合的准确表达式，该结果与非相对论近似下的结论有重大差别，获得了波衰减因子的解析表达式，波的衰减因子由两部分组成：O－模的相对论衰减及与O－模耦的X－模的衰减。     

Thickness-dependent magnetic properties in Pt/[Co/Ni]n multilayers with perpendicular magnetic anisotropy

We systematically investigated the Ni and Co thickness-dependent perpendicular magnetic anisotropy (PMA) coefficient, magnetic domain structures, and magnetization dynamics of Pt(5 nm)/[Co($t_{\rm Co}$)/Ni($t_{\rm Ni}$)]$_{5}$/Pt(1 nm) multilayers by combining the four standard magnetic characterization techniques. The magnetic-related hysteresis loops obtained from the field-dependent magnetization $M$ and anomalous Hall resistivity (AHR) $\rho_{{xy}}$ showed that the two serial multilayers with $t_{\rm Co} = 0.2$ nm and 0.3 nm have the optimum PMA coefficient $K_{\rm U}$ as well as the highest coercivity $H_{\rm C}$ at the Ni thickness $t_{\rm Ni}= 0.6 $ nm. Additionally, the magnetic domain structures obtained by magneto-optic Kerr effect (MOKE) microscopy also significantly depend on the thickness and $K_{\rm U}$ of the films. Furthermore, the thickness-dependent linewidth of ferromagnetic resonance is inversely proportional to $K_{\rm U}$ and $H_{\rm C}$, indicating that inhomogeneous magnetic properties dominate the linewidth. However, the intrinsic Gilbert damping constant determined by a linear fitting of the frequency-dependent linewidth does not depend on the Ni thickness and $K_{\rm U}$. Our results could help promote the PMA [Co/Ni] multilayer applications in various spintronic and spin-orbitronic devices.     

Perpendicular magnetization and exchange bias in epitaxial NiO/[Ni/Pt]2 multilayers

The realization of perpendicular magnetization and perpendicular exchange bias(PEB)in magnetic multilayers is important for the spintronic applications.NiO(t)/[Ni(4 nm)/Pt(1 nm)]₂multilayers with varying the NiO layer thickness t have been epitaxially deposited on SrTiO;(001)substrates.Perpendicular magnetization can be achieved when t<25 nm.Perpendicular magnetization originates from strong perpendicular magnetic anisotropy(PMA),mainly resulting from interfacial strain induced by the lattice mismatch between the Ni and Pt layers.The PMA energy constant decreases monotonically with increasing t,due to the weakening of Ni(001)orientation and a little degradation of the Ni–Pt interface.Furthermore,significant PEB can be observed though NiO layer has spin compensated(001)crystalline plane.The PEB field increases monotonically with increasing t,which is considered to result from the thickness dependent anisotropy of the NiO layer.     

CoFeB/AlOx/Ta及AlOx/CoFeB/Ta结构中垂直易磁化效应的研究

本文详细研究了在不同氧化层和铁磁层厚度情况下, 底层CoFeB/AlO_x/Ta结构和 顶层AlO_x/CoFeB/Ta结构中的垂直磁各向异性. 在底层CoFeB/AlO_x/Ta结构中观察到了垂直磁化的磁滞回线, 证明了其垂直易磁化效应的存在; 而在顶层AlO_x/CoFeB/Ta结构中却没有观察到类似的磁滞回线. 对这种对称结构中的非对称现象进行了分析. 研究还发现不同的氧化层和铁磁层厚度均会影响层间界面相互作用的强度, 从而导致结构的垂直磁化曲线矫顽力大小发生改变. 这项研究将对基于AlO_x氧化层垂直磁隧道结的研制具有重要的意义. 关键词： 垂直磁各向异性 磁隧道结 随机存储器     

Water structures inside and outside single-walled carbon nanotubes under perpendicular electric field

The structures of water inside and outside(6,6),(8,8), and(10,10) singlewalled carbon nanotubes(SWCNTs) under an electric field perpendicular to the tube axis are investigated by molecular dynamics simulations. The results show that dipole reorientation induced by electric field plays a significant role on the structures of confined water inside and outside SWCNTs. Inside SWCNTs, the average water occupancy and the average number of hydrogen bonds(H-bonds) per water molecule decrease as the electric intensity increases. Because the field intensity is sufciently strong, the initial water structures inside the SWCNTs are destroyed, and the isolated water clusters are found. Outside SWCNTs, the azimuthal distributions of the density and the average number of H-bonds per water molecule around the solid walls become more and more asymmetric as the electric intensity increases. The percentages of water molecules involved in 0–5 H-bonds for all the three types of SWCNTs under diferent field intensities are displayed. The results show that those water molecules involved with most H-bonds are the most important to hold the original structures. When the electric field direction is parallel with the original preferred orientation, the density and the H-bond connections in water will be increased; when the electric field direction is perpendicular to the original preferred orientation, the density and the H-bond connections in water will be decreased.     

Magnetic properties of a Pt/Co₂ FeAl/MgO structure with perpendicular magnetic anisotropy

Microstructures and magnetic properties of Ta/Pt/Co 2 FeAl(CFA)/MgO multilayers are studied to understand perpendicular magnetic anisotropy(PMA) of half-metallic full-Heusler alloy films.PMA is realized in a 2.5-nm CFA film with B2-ordered structure observed by a high resolution transmission electron microscope.It is demonstrated that a high quality interface between the ferromagnetic layer and oxide layer is not essential for PMA.The conversions between in-plane anisotropy and PMA are investigated to study the dependence of magnetic moment on temperature.At the intersection points,the decreasing slope of the saturation magnetization(M s) changes because of the conversions.The dependence of M s on the annealing temperature and MgO thickness is also studied.     

Characterization of high‐density bit‐patterned media using ultra‐high resolution magnetic force microscopy

Bit‐patterned media at one terabit‐per‐square‐inch (Tb/in²) recording density require a feature size of about 12 nm. The fabrication and characterization of such magnetic nanostructures is still a challenge. In this Letter, we show that magnetic dots can be resolved at 10 nm spacing using magnetic force microscopy (MFM) tips coated with a magnetic film possessing a perpendicular magnetic anisotropy (PMA). Compared to MFM tips with no special magnetic anisotropy, MFM tips with PMA can resolve the bits clearly, because of a smaller magnetic interaction volume, enabling a simple technique for characterizing fine magnetic nanostructures. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

过量B的Ta/CoFeB/MgO薄膜垂直各向异性和温度稳定性的增强

以CoFeB/MgO为核心单元的垂直各向异性薄膜体系和相关的垂直磁隧道结已获得广泛研究,其中CoFeB的B含量基本都保持为原子比20%.本文采用磁控溅射制备了Ta/(Co0.5Fe0.5)1-xBx/MgO三明治结构及生长顺序相反的系列薄膜,并在573—623K进行真空退火,研究了样品垂直各向异性随B成分的变化.结果显示,当B含量减小到10%时,Ta/CoFeB/MgO体系的垂直各向异性明显降低;相反,当B含量增加至30%时,该体系的垂直各向异性明显增强;发现在高B含量的情形下,样品的垂直各向异性大小与温度稳定性均与三明治结构的生长顺序密切相关;获得了具有优异温度稳定性的垂直磁化MgO/CoFeB/Ta样品.结果表明适当增加B含量是增强CoFeB/MgO体系垂直各向异性和温度稳定性的有效途径之一.     

The spectrum of additive BIB designs

In this article, the existence of additive BIB designs is discussed with direct and recursive constructions, together with investigation of a property of resolvability. Such designs can be used to construct infinite families of BIB designs. In particular, we obtain a series of B(sⁿ, ts^m, λt (ts^m ? 1) (s^n‐m ? 1)/[2(s^m ? 1)]) for any positive integer λ, such that sⁿ (sⁿ ? 1) λ ≡ 0 (mod s^m (s^m ? 1) and for any positive integer t with 2 ≤ t ≤ s^n‐m, where s is an odd prime power. Connections between additive BIB designs and other combinatorial objects such as multiply nested designs and perpendicular arrays are discussed. A construction of resolvable BIB designs with v = 4k is also proposed. © 2007 Wiley Periodicals, Inc. J Combin Designs 15: 235–254, 2007