The Uniformly 3-Homogeneous Subsets of PGL(2, q)

We use the character-table of PGL(2, q) to determine the subsets of that group acting uniformly 3-homogeneously on the projective line.     

Strong perpendicular magnetic anisotropy in Co2FeAl0.5Si0.5 film sandwiched by MgO layers

Co2FeAl0.5Si0.5 (CFAS)-based multilayers sandwiched by MgO layers have been deposited and annealed at different temperatures. Perpendicular magnetic anisotropy (PMA) with the magnetic anisotropy energy density Ku ≈2.5×106 erg/cm3 (1 erg = 10-7 J) and the coercivity Hc = 363 Oe (1 Oe = 79.9775 A · m-1) has been achieved in the Si/SiO2/MgO (1.5 nm)/CFAS (2.5 nm)/MgO (0.8 nm)/Pt (5 nm) film annealed at 300 ℃. The strong PMA is mainly due to the top MgO layer. The structure can be used as top magnetic electrodes in half-metallic perpendicular magnetic tunnel junctions.     

Tunable interface anisotropy in a Pt/Co_(1-x)Fe_x/Pt multilayer

Interfacial magnetic anisotropy in a Pt/Co1-xFex /Pt multilayer is tuned by doping iron atoms into the cobalt layer.The perpendicular magnetic anisotropy and out-of-plane coercivity are found to decrease with increasing x.For a specific x,the out-of-plane coercivity acquires a maximal value as a function of the thickness of the CoFe layer.At low temperature,the coercivity is enhanced.Small coercivity but reasonably large perpendicular magnetic anisotropy can be obtained by controlling the x and CoFe layer thickness.     

Perpendicular magnetic recording—Its development and realization—

The principle of conventional magnetic recording is that magnetic fields are applied parallel to the plane of the magnetic medium. As described in this paper, the invention and development of a new method of placing the magnetized information perpendicular to the plane of the magnetic recording medium is presented. The yield in the mass production of high-density hard disk drives (HDDs) for perpendicular recording is much higher than that of HDDs for conventional recording. Consequently, it is estimated that as many as 75% of the 500 million HDDs to be shipped this year will use this technology.     

利用FePt/Au多层膜结构制备垂直磁记录L10-FePt薄膜

利用磁控溅射方法在100℃的MgO单晶基片上制备了［FePt/Au］₁₀多层膜,并研究了采用FePt/Au多层膜结构对FePt薄膜的有序化温度、矫顽力（H_C）、垂直磁各向异性、晶粒尺寸以及颗粒间磁交换耦合作用的影响.磁性测试结果表明：FePt/Au多层膜在退火后具有较高的H_C、良好的垂直磁各向异性、较小的晶粒尺寸且无磁交换耦合作用.截面高分辨电镜分析表明：Au可以缓解MgO和FePt之间较大的晶格错配,从而促进薄 关键词： 0-FePt薄膜')" href="#">L1₀-FePt薄膜 有序化温度 垂直磁各向异性 磁交换耦合作用     

电场对(4, 0)Zigzag模型单壁碳纳米管的影响

The structural and electronic properties of a (4, 0) zigzag single-walled carbon nanotube (SWCNT) under parallel and transverse electric fields with strengths of 0-1.4×10~(-2) a.u. Were studied using the density functional theory (DFT) B3LYP/6-31G~* method. Results show that the properties of the SWCNT are dependent on the external electric field. The applied external electric field strongly affects the molecular dipole moments. The induced dipole moments increase linearly with increase in the electrical field intensities. This study shows that the application of parallel and transverse electric fields results in changes in the occupied and virtual molecular orbitals (Mos) but the energy gap between the highest occupied MO (HOMO) and the lowest unoccupied MO (LUMO) of this SWCNT is less sensitive to the electric field strength. The electronic spatial extent (ESE) and length of the SWCNT show small changes over the entire range of the applied electric field strengths. The natural bond orbital (NBO) electric charges on the atoms of the SWCNT show that increase in the external electric field strength increases the separation of the center of the positive and negative electric charges of the carbon nanotube.     

电子垂直入射电离氦原子碰撞机理的理论研究

用3C模型和修正后的3C模型在低能、两个出射电子等能分享几何条件下,对电子垂直入射碰撞电离氦原子的三重微分散射截面进行了理论计算,并把计算结果与实验测量结果进行了比较,系统研究了(e,2e)反应中各种屏蔽效应对氦原子三重微分散射截面的影响,同时对截面中形成各峰的碰撞机理做了详细的探讨.研究结果表明:在入射能较低时,各种屏蔽效应对氦原子的三重微分散射截面幅度以及角分布均存在一定影响,并且形成各峰的碰撞机理直接影响截面的变化规律.     

1KeV电子入射单电离氦原子三重微分散射截面的理论研究

用3C模型、DS3C模型对1KeV电子入射氦原子(e,2e)反应中的三重微分散射截面进行了计算,并将理论计算结果与实验数据进行了比较,研究了各种屏蔽效应对散射平面内以及垂直平面内三重微分散射截面的影响,并对三重微分散射截面变化规律进行了探讨.结果表明:各种屏蔽效应对散射平面内三重微分散射截面的贡献可以忽略;而在垂直平面内,这些效应对三重微分散射截面结构存在较强影响;另外,末态出射电子与靶核的相互作用直接影响散射平面内和垂直平面内截面的结构及其变化规律.     

Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers

The interplay of the Rashba effect and the spin Hall effect originating from current induced spin–orbit coupling was investigated in the as-deposited and annealed Pt/Co/MgO stacks with perpendicular magnetic anisotropy. The above two effects were analyzed based on Hall measurements under external magnetic fields longitudinal and vertical to dc current,respectively. The coercive field as a function of dc current in vertical mode with only the Rashba effect involved decreases due to thermal annealing. Meanwhile, spin orbit torques calculated from Hall resistance with only the spin Hall effect involved in the longitudinal mode decrease in the annealed sample. The experimental results prove that the bottom Pt/Co interface rather than the Co/MgO top one plays a more critical role in both Rashba effect and spin Hall effect.     

Spin current transmission in Co1-xTbx films

We investigate the spin to charge conversion phenomena in Y₃Fe₅O₁₂/Pt/Co_1-xTb_x/Pt multilayers by both the spin pumping and spin Seebeck effects.We find that the spin transport efficiency is irrelevant to magnetization states of the perpendicular magnetized Co;Tb;films,which can be attributed to the symmetry requirement of the inverse transverse spin Hall effect.Furthermore,the spin transmission efficiency is significantly affected by the film concentration,revealing the dominant role of extrinsic impurity scattering caused by Tb impurity.The present results provide further guidance for enhancing the spin transport efficiency and developing spintronic devices.